Ultrahigh Photoresponsive Device Based on ReS₂/Graphene Heterostructure

Abstract

Heterostructures that combine graphene and transition metal dichalcogenides, such as MoS , MoTe , and WS , have attracted attention due to their high performances in optoelectronic devices compared to homogeneous systems. Here, a photodevice based on a hybrid van der Waals heterostructure of rhenium disulfide (ReS ) and graphene is fabricated using the stacking method. The device presents a remarkable ultrahigh photoresponsivity of 7 × 10 A W and a detectivity of 1.9 × 10 Jones, along with a fast response time of less than 30 ms. Tremendous photocurrents are generated in the heterostructure due to the direct bandgap, high quantum efficiency, and strong light absorption by the multilayer ReS and the high carrier mobility of graphene. The ReS /graphene heterostructured device displays a high photocurrent under the applied gate voltages due to the photogating effect induced by the junction between graphene and ReS . The ReS /graphene heterostructure may find promising applications in future optoelectronic devices, providing a high sensitivity, flexibility, and transparency.

Electronic and Optoelectronic Applications Based on ReS2

“…f) Photoswiching behaviors of a ReS 2 photodetector and a ReS 2 /graphene photodetector. Reproduced with permission . Copyright 2018, Wiley‐VCH.…”

Tunable Room‐Temperature Synthesis of ReS2 Bicatalyst on 3D‐ and 2D‐Printed Electrodes for Photo‐ and Electrochemical Energy Applications

“…Besides the exfoliation from bulk crystals, [ 21–24 ] among all ReS 2 synthesis techniques such as hydrothermal, [ 18,25–27 ] atomic layer deposition, [ 28 ] and chemical vapor deposition (CVD), [ 29–36 ] evidently CVD has emerged as the most favorable method. These works mainly utilized Re, ReO 3 or NH 4 ReO 4 , and S powder as precursors for Re and S, respectively, with high growth temperature between 450 to 1000 °C to initiate the reaction of the precursors.…”

Versatile Crystal Structures and (Opto)electronic Applications of the 2D Metal Mono‐, Di‐, and Tri‐Chalcogenide Nanosheets

“…Numerous 2D metal chalcogenides with natural bandgaps, such as WS 2 , MoSe 2 , ReS 2 , SnS 2 , SnSe 2 , HfS 2 , InSe, GaTe, TiS 3 ,[35b] and In 2 Se 3 ,[8a] have been investigated for their excellent photodetector properties. InSe and SnS 2 have been experimentally proven to easily realize faster photoresponses (87 µs for InSe and 5 µs for SnS 2 ) than other 2D metal chalcogenides .…”