Ultrahigh purity conditions for nitride growth with low oxygen content by plasma-enhanced atomic layer deposition

Rayner, G. B.; O'Toole, Noel; Shallenberger, Jeffrey R.; Johs, B.

doi:10.1116/6.0000454

Cited by 23 publications

(23 citation statements)

References 29 publications

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“…The base pressure of the chamber was 3 Pa, meaning that a minor background pressure of oxygen and nitrogen from the air is to be expected in the chamber. 28 A small amount of Ti, 3-7 at. %, is also found in the films and is most likely due to sputtering of the titanium hollow cathode.…”

Section: A Asd Using Pdms Pmma and Psmentioning

confidence: 99%

Area Selective Deposition of Iron Films Using Temperature Sensitive Masking Materials and Plasma Electrons as Reducing Agents

Nadhom¹,

Yuan²,

Rouf³

et al. 2021

Preprint

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<p>potential of area selective deposition (ASD) with a newly developed chemical vapor deposition method, which utilize plasma electrons as reducing agents for deposition of metal-containing films, is demonstrated using temperature sensitive polymer-based masking materials. The masking materials tested were polydimethylsiloxane (PDMS), polymethylmethacrylate (PMMA), polystyrene (PS), parafilm, Kapton tape, Scotch tape, and office paper. The masking materials were all shown to prevent film growth on the masked area of the substrate without being affected by the film deposition process. X-ray photoelectron spectroscopy analysis confirms that the films deposited consist mainly of iron, whereas no film material is found on the masked areas after mask removal. SEM analysis of films deposited with non-adhesive masking materials show that film growth extended for a small distance underneath the masking material, indicating that the CVD process with plasma electrons as reducing agents is not a line-of-sight deposition technique. The reported methodology introduces an inexpensive and straightforward approach for ASD that opens for exciting new possibilities for robust and less complex area selective metal-on-metal deposition. </p>

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Section: A Asd Using Pdms Pmma and Psmentioning

confidence: 99%

Area Selective Deposition of Iron Films Using Temperature Sensitive Masking Materials and Plasma Electrons as Reducing Agents

Nadhom¹,

Yuan²,

Rouf³

et al. 2021

Preprint

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show abstract

“…Additionally, film depositions were done in medium vacuum which means low levels of oxygen exposure is expected during deposition. 28 For this reason, the films deposited on the unmasked Ag areas where sputter cleaned for 1800 s in the XPS chamber prior to compositional analysis. The composition analysis of the sputter cleaned films deposited on the unmasked Ag areas (Fig.…”

Section: A Asd Using Pdms Pmma and Psmentioning

confidence: 99%

Area Selective Deposition of Metal Films Using Temperature Sensitive Masking Materials and Plasma Electrons as Reducing Agents

Nadhom¹,

Yuan²,

Rouf³

et al. 2021

Preprint

View full text Add to dashboard Cite

<p>The potential of area selective deposition (ASD) with a newly developed chemical vapor deposition method, which utilize plasma electrons as reducing agents for deposition of metal films, is demonstrated using temperature sensitive polymer-based masking materials. The masking materials tested were polydimethylsiloxane (PDMS), polymethylmethacrylate (PMMA), polystyrene (PS), parafilm, Kapton tape, Scotch tape, and office paper. The masking materials where all shown to prevent film growth on the masked area of the substrate without being affected by the film deposition process. X-ray photoelectron spectroscopy analysis confirms that the film deposited consist mainly of metallic iron, whereas no film material is found on the masked areas after mask removal. SEM analysis of films deposited with non‑adhesive masking materials show that film growth extended for a small distance underneath the masking material, indicating that the CVD process with plasma electrons as a reducing agent is not a line-of-sight deposition technique. The reported methodology introduces an inexpensive and straightforward approach for ASD that opens for exciting new possibilities for robust and less complex area selective metal‑on‑metal deposition. </p>

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“…The oxyphilic nature of AlN, denoted by the significantly higher ΔGf° for Al2O3 compared to AlN above, means that AlN will be extremely prone to incorporate any background oxygen atoms present in the ALD reactor into the growing film. One can therefore either limit the depositions to sophisticated ALD reactor configurations with extremely low oxygen background levels, 6 or build oxygen scavenging properties into the precursor. We previously used TMA as a template to design a homoleptic analogue precursor, replacing all methyl grounds with amide ligands; tris(dimethylamido)aluminum(III) was used to deposit Al2O3 by ALD with C contamination of less than 1%.…”

Section: Introductionmentioning

confidence: 99%

Resolving impurities in atomic layer deposited aluminum nitride through low cost, high efficiency precursor design

Buttera

Rouf²,

Deminskyi³

et al. 2020

Preprint

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Ultrahigh purity conditions for nitride growth with low oxygen content by plasma-enhanced atomic layer deposition

Abstract: Paper published as part of the special topic on Atomic Layer Deposition (ALD) ARTICLES YOU MAY BE INTERESTED INStatus and prospects of plasma-assisted atomic layer deposition

Cited by 23 publications

References 29 publications

Area Selective Deposition of Iron Films Using Temperature Sensitive Masking Materials and Plasma Electrons as Reducing Agents

Area Selective Deposition of Iron Films Using Temperature Sensitive Masking Materials and Plasma Electrons as Reducing Agents

Area Selective Deposition of Metal Films Using Temperature Sensitive Masking Materials and Plasma Electrons as Reducing Agents

Resolving impurities in atomic layer deposited aluminum nitride through low cost, high efficiency precursor design

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