Ultrahigh sensitive plasmonic terahertz detector based on an asymmetric dual-grating gate HEMT structure

Watanabe, Takayuki; Tombet, Stephane Boubanba; Tanimoto, Youichi; Wang, Yuye; Minamide, Hiroaki; Ito, Hiromasa; Fateev, D. V.; Popov, V. V.; Coquillat, Dominique; Knap, W.; Otsuji, Taiichi

doi:10.1109/isdrs.2011.6135193

Cited by 11 publications

(26 citation statements)

References 7 publications

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“…The experimental value of mobility is lower than the theoretical value due to the eect of transistors channel geometry. The electron concentration in the gated part of transistor channel was determined from high B part of photoresponse by the Fourier transform of Shubnikovde Haas oscillations plotted as a function of B −1 [3]. Power spectra of the Fourier transform corresponding to signal ∆U and channel resistance R DS of Fig.…”

Section: Resultsmentioning

confidence: 99%

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THz Double-Grating Gate Transistor Detectors in High Magnetic Fields

et al. 2012

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Double-grating-gate eld-eect transistors have a great potential as terahertz detectors. This is because the double grating gate serves not only for carrier density tuning but also as an ecient THz radiation coupler. In this paper, we present characterization of these transistors using high magnetic elds. Low and high magnetic eld data are used to determine the electron mobility and electron concentration, respectively, in dierent parts of the transistor channel.

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Section: Resultsmentioning

confidence: 99%

“…In Refs. [3,4] there was demonstrated high photovoltaic responsivity exceeding 2.2 kV/W at 1 THz with a low noise equivalent power of 15 pW/Hz 1/2 at room temperature. Typical structure of the A-DGG-FET with an asymmetric unit cell is shown in Fig.…”

Section: Introductionmentioning

confidence: 99%

THz Double-Grating Gate Transistor Detectors in High Magnetic Fields

et al. 2012

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“…4, which also provides ultrahighsensitive THz detection. [37][38][39][40] This is because the unit cell of the A-DGG structure can create a strong built-in asymmetric field. The THz photoresponse dramatically increases when the parts of the 2-D channel under the fingers of one of the two subgratings are depleted.…”

Section: 44mentioning

confidence: 99%

“…These signals at every 2-D plasmon cavities are summed up, leading to an effective photovoltaic signal between the drain and source. 37 …”

Section: 44mentioning

confidence: 99%

“…35 Recently, authors have proposed an asymmetric DGG (A-DGG) structure and demonstrated coherent monochromatic THz emission and ultrahigh-sensitive THz detection with 2.2 kV∕W at 1 THz radiation. [36][37][38][39] This paper reviews recent advances in emission and detection of THz radiation using 2-D plasmons in semiconductor nanoheterostructures for nondestructive evaluations. The 2-D plasmon resonance is first presented as the operation principle to demonstrate its potential of broadband intense emission and sensitive detection of THz radiation.…”

Section: Introductionmentioning

confidence: 99%

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Emission and detection of terahertz radiation using two-dimensional plasmons in semiconductor nanoheterostructures for nondestructive evaluations

et al. 2013

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Abstract. The recent advances in emission and detection of terahertz radiation using two-dimensional (2-D) plasmons in semiconductor nanoheterostructures for nondestructive evaluations are reviewed. The 2-D plasmon resonance is introduced as the operation principle for broadband emission and detection of terahertz radiation. The device structure is based on a high-electron-mobility transistor and incorporates the authors' original asymmetrically interdigitated dual-grating gates. IntroductionIn the research of modern terahertz (THz) electronics, development of compact, tunable, and coherent sources operating at THz frequencies is one of the hottest issues.1 Two-dimensional (2-D) plasmons in submicron transistors have attracted much attention due to their nature of promoting emission and detection of electromagnetic radiation in the THz range. The channel of a transistor can act as a resonator for plasma waves, the charge-density waves of collectively excited 2-D electrons. The plasma frequency depends on the resonator dimensions and the density of 2-D electrons. It can reach the sub-THz or even THz range for gate lengths of a micron and submicron (nanometer) size. Therefore, different devices/structures of micron and submicron sizes supporting low-dimensional plasmons were intensively studied as possible candidates for solid-state far-infrared (FIR)/THz sources 2-18 and detectors. [19][20][21][22][23][24][25][26][27][28][29][30] Mechanisms of plasma wave excitation/emission can be divided (by convention) into two types: (1) incoherent and (2) coherent. The first is related to thermal excitation of broadband nonresonant plasmons by hot electrons.2-7 The second is related to the plasma wave instability mechanisms like Dyakonov-Shur (DS) Doppler-shift model 8 and/or Ryzhii-Satou-Shur (RSS) transit-time model, 17,18 where coherent plasmons can be excited either by hot electrons or by optical phonon emission under near ballistic electron motion. 31 On the other hand, hydrodynamic nonlinearities of 2-D plasmons in highelectron-mobility transistors (HEMTs) are promising for fast and sensitive rectification/detection of THz radiation.

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Plasmonic terahertz detector response at high intensities

Gutin

Kachorovskii²,

Muraviev

et al. 2012

Journal of Applied Physics

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Recent work on plasmonic terahertz detection using field effect transistors (FETs) has yielded detectors with high responsivity. Therefore, deviation from small signal mode of operation, when the detector signal is simply proportional to the THz intensity, must be considered. This work presents a new analytical model to predict terahertz response in a FET at arbitrary intensity levels. The proposed analytical model was experimentally validated using a 0.13 μm InGaAs high electron mobility transistor and optically pumped CO2 gas laser operating at 1.63 THz of varying output intensities. The model is suitable for implementation in circuit simulators and might be used for device optimization and THz circuit design.

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Ultrahigh sensitive plasmonic terahertz detector based on an asymmetric dual-grating gate HEMT structure

Cited by 11 publications

References 7 publications

THz Double-Grating Gate Transistor Detectors in High Magnetic Fields

THz Double-Grating Gate Transistor Detectors in High Magnetic Fields

Emission and detection of terahertz radiation using two-dimensional plasmons in semiconductor nanoheterostructures for nondestructive evaluations

Plasmonic terahertz detector response at high intensities

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