Ultrahigh sensitive plasmonic terahertz detector based on an asymmetric dual-grating gate HEMT structure

Watanabe, Takayuki; Tombet, Stephane Boubanga; Tanimoto, Youichi; Wang, Yuye; Minamide, Hiroaki; Ito, Hiromasa; Fateev, D. V.; Popov, V. V.; Coquillat, Dominique; Knap, W.; Meziani, Yahya Moubarak; Otsuji, T.

doi:10.1016/j.sse.2012.05.047

Cited by 72 publications

(26 citation statements)

References 27 publications

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“…7 Furthermore, very high responsivity of 2.2 kV/W at 1 THz was demonstrated using InAlAs/ InGaAs/InP HEMT with an asymmetric dual-grating-gate (A-DGG). 8,9 Such enormous responsivity of the A-DGG HEMT THz detector was achieved due to its intense nonlinear rectification response and strong coupling between incident THz radiation and plasmons in 2D electron channels of the A-DGG HEMT. However, the detection using the A-DGG HEMT in the sub-THz region has not been studied so far.…”

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confidence: 99%

Ultrahigh sensitive sub-terahertz detection by InP-based asymmetric dual-grating-gate high-electron-mobility transistors and their broadband characteristics

Kurita

Ducournau

Coquillat

et al. 2014

Applied Physics Letters

124

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Ultrahigh sensitive sub-terahertz detection by InP-based asymmetric dual-grating-gate high-electron-mobility transistors and their broadband characteristics Helicity sensitive terahertz radiation detection by field effect transistors We report on the observation of a radiation helicity sensitive photocurrent excited by terahertz (THz) radiation in dual-grating-gate (DGG) InAlAs/InGaAs/InAlAs/InP high electron mobility transistors (HEMT). For a circular polarization, the current measured between source and drain contacts changes its sign with the inversion of the radiation helicity. For elliptically polarized radiation, the total current is described by superposition of the Stokes parameters with different weights. Moreover, by variation of gate voltages applied to individual gratings, the photocurrent can be defined either by the Stokes parameter defining the radiation helicity or those for linear polarization. We show that artificial non-centrosymmetric microperiodic structures with a two-dimensional electron system excited by THz radiation exhibit a dc photocurrent caused by the combined action of a spatially periodic in-plane potential and spatially modulated light. The results provide a proof of principle for the application of DGG HEMT for all-electric detection of the radiation's polarization state. V C 2015 AIP Publishing LLC. [http://dx.

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confidence: 99%

Ultrahigh sensitive sub-terahertz detection by InP-based asymmetric dual-grating-gate high-electron-mobility transistors and their broadband characteristics

Kurita

Ducournau

Coquillat

et al. 2014

Applied Physics Letters

124

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“…Doped germanium 11 and superconductor-insulator-superconductor (SIS) detectors 12 are very sensitive and have a quick response time; however, they are expensive and difficult to produce. Field-Effect Transistors (FETs) have also attracted attention for their THz detection capability, [13][14][15][16][17] although most of these are not based on the electronics industry staple, silicon. Those detection schemes that do use silicon have limited spectral range.…”

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confidence: 99%

Picosecond dynamics of a silicon donor based terahertz detector device

Bowyer

Villis

et al. 2014

Applied Physics Letters

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“…In Refs. [3,4] there was demonstrated high photovoltaic responsivity exceeding 2.2 kV/W at 1 THz with a low noise equivalent power of 15 pW/Hz 1/2 at room temperature. Typical structure of the A-DGG-FET with an asymmetric unit cell is shown in Fig.…”

Section: Introductionmentioning

confidence: 99%

“…Two grating gates with dierent widths were formed with the Ti/Au/Ti gate-to-channel separation d = 65 nm. The theoretically assumed values of carrier density N (0) and scattering time s were: N (0) = 2.5 × 10 12 cm −2 and s = 2.9 × 10 −13 s (which corresponds to a room temperature electron mobility 12,000 cm 2 /(V s) in an InAlAs/InGaAs/InP heterostructure) [1,4]. …”

Section: Introductionmentioning

confidence: 99%

THz Double-Grating Gate Transistor Detectors in High Magnetic Fields

et al. 2012

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Double-grating-gate eld-eect transistors have a great potential as terahertz detectors. This is because the double grating gate serves not only for carrier density tuning but also as an ecient THz radiation coupler. In this paper, we present characterization of these transistors using high magnetic elds. Low and high magnetic eld data are used to determine the electron mobility and electron concentration, respectively, in dierent parts of the transistor channel.

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Ultrahigh sensitive plasmonic terahertz detector based on an asymmetric dual-grating gate HEMT structure

Cited by 72 publications

References 27 publications

Ultrahigh sensitive sub-terahertz detection by InP-based asymmetric dual-grating-gate high-electron-mobility transistors and their broadband characteristics

Ultrahigh sensitive sub-terahertz detection by InP-based asymmetric dual-grating-gate high-electron-mobility transistors and their broadband characteristics

Picosecond dynamics of a silicon donor based terahertz detector device

THz Double-Grating Gate Transistor Detectors in High Magnetic Fields

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