Ultrahigh vacuum chemically assisted ion beam etching system with a three grid ion source

Abstract

Articles you may be interested inInvestigation of electrochemical etch differences in AlGaAs heterostructures using Cl2 ion beam assisted etching J. Vac. Sci. Technol. A 33, 021304 (2015); 10.1116/1.4904211High-aspect-ratio chemically assisted ion-beam etching for photonic crystals using a high beam voltage-current ratio J.Dry etching and consequent burring regrowth of nanosize quantum wells stripes using an in situ ultrahigh vacuum multichamber system A chemically assisted ion beam etching system has been developed which performs high quality, highly anisotropic etching of AlGaAs/GaAs at relatively low ion energies ͑200 eV͒. The use of three grid ion optics in a Kaufman ion source allows etching at low energies with reasonable rates without loss of profile verticality. All ultrahigh vacuum etching chamber construction with a high throughput turbomolecular pump and high vacuum loadlock provide routine high quality etching of AlGaAs without the use of etch chamber cryo panels or cryo pumps. Low ion energy and a clean vacuum environment permit the use of a single level, non hard baked photoresist mask. Benefits include high pattern resolution and fidelity, low mask erosion rate, good dimensional control, and easy, complete mask stripping as well as reduced substrate damage.

III-V Semiconductor Optical Micro-Ring Resonators

“…The fabrication process typically consists of the deposition of a silica hard mask, followed by patterning of the silica using a PMMA mask defined by e-beam lithography, and then transfer of the pattern into the underlying semiconductor by anisotropic dryetching. For GaAs-AlGaAs, the etching is usually carried out with a chlorine chemistry in a chemically-assisted ion beam etching system, or an inductively-coupled plasma reactive ion etcher (ICP-RIE); we used CAIBE in our work (Hryniewicz CAIBE Model 1) [17]. GaInAsP-InP is usually etched in methane chemistries [18], though numerous groups also use halogens.…”

Reflectively Coupled Waveguide Photodetector for High Speed Optical Interconnection

“…The InP buffer layer was then removed using wet etching, 1 HCl: 1 H 2 O, from the areas surrounding the detector. The chemically assisted ion beam etching (CAIBE) technique [ 19 ] allowed the mirror angle to be set by adjusting the wafer orientation with respect to the incident ion beam. The angle reflector opening angle was ∼29°.…”

Form-birefringence structure fabrication in GaAs by use of SU-8 as a dry-etching mask

“…7 Figure 3(d) also shows that the upper portion of the etched pattern remains quite square in profile, indicating that the described optimized etching procedure is a damage-free process, which could previously be achieved only by thick resist or hard mask transfer. 11,12 Note that, in this optimized process, the anisotropic etch is accomplished by one's increasing the lateral deposition rate to match the lateral etching rate. These two rates processes can also be matched by reduction of the lateral etching rate, which we are currently investigating.…”