Ultralong Single-Crystal Metallic Ni₂Si Nanowires with Low Resistivity

Abstract

Ultralong, single-crystal Ni2Si nanowires sheathed with amorphous silicon oxide were synthesized on a large scale by a chemical vapor transport (CVT) method, using iodine as the transport reagent and Ni2Si powder as the source material. Structural characterization using powder X-ray diffraction, electron microscopy, and energy-dispersive spectroscopy shows that the nanowires have Ni2Si-SiOx core-shell structure with single-crystal Ni2Si core and amorphous silicon oxide shell. The oxide shell is electrically insulating and can be removed by HF etching. Four-terminal electrical measurements show that the single-crystal nanowire has extremely low resistivity of 21 muOmega.cm and is capable of supporting remarkably high failure current density >108 A/cm2. These unique Ni2Si nanowires are very attractive nanoscale building blocks for interconnects and fully silicided (FUSI) gate applications in nanoelectronics.

Multiplex Imaging of Pancreatic Cancer Cells by Using Functionalized Quantum Rods

“…One-dimensional semiconductor nanostructures such as quantum rods (QRs) [1][2][3] and quantum wires (QWs) [4][5][6][7][8][9] have been attracting significant interest over the last few years owing to their unique optical properties, which in turn give rise to potential applications in fields ranging from biology to electronics. [1,3,[9][10][11][12] CdSe has a Bohr radius of 4.9 nm and a direct band gap of 1.89 eV, [10] and is used in photovoltaics, [13] light-emitting diodes for flat-panel displays, and in other optical devices on the basis of its nonlinear properties.…”

Nanoindentation Behaviour and Annealed Microstructural Evolution of Ni/Si Thin Film

“…Ni 2 Si phase has an orthorhombic structure, with lattice parameters a ¼ 0:7068 nm, b ¼ 0:5004 nm, and c ¼ 0:3722 nm. 31) Note that the presence of this Ni 2 Si phase is confirmed by the peak in the corresponding Raman spectrum at 140 cm À1 32) (see Fig. 4(b)).…”

Porous Alumina Template based Versatile and Controllable Direct Synthesis of Silicon nanowires

“…Another advantage of multi-metal filling rely on the fact that while silicon nanowires are grown using gold nanoparticles as a catalyst, the underlying Ni nanowires can lead to nickel silicide formation which ensure better contact between Ni and underlying Si substrate. Such nickel silicide layer can reduce contact resistance between substrate (in applications where it is to be used as contact electrode) and silicon nanowires [17,18]. This is very important for practical device application because, contact resistance between silicon nanowires and metal electrode is always the problem which has to be overcome.…”

“…Thus, nickel nanowires could be readily filled until non-branched stem of nanopores. Another very important advantaged of introducing nickel as an underlying metal nanoparticles is that nickel silicide is regarded as one of the most effective materials to make ohmic contact between silicon nanowires and metal electrode to reduce contact resistance [17,18].…”