2005
DOI: 10.1038/nmat1291
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Ultralow-k nanoporous organosilicate dielectric films imprinted with dendritic spheres

Abstract: Integrated circuits that have improved functionality and speed in a smaller package and that consume less power are desired by the microelectronics industry as well as by end users, to increase device performance and reduce costs. The fabrication of high-performance integrated circuits requires the availability of materials with low or ultralow dielectric constant (low-k: k Show more

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Cited by 238 publications
(182 citation statements)
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“…Solution X-ray scattering measurements were carried out at the 4C beamline [30][31][32] of the Pohang Accelerator Laboratory at Pohang University of Science and Technology. Each micellar solution was filtered through a disposable syringe equipped with a polytetrafluoroethylene filter with a 0.2 μm pore size before measurements.…”
Section: Synchrotron X-ray Scattering Measurementsmentioning
confidence: 99%
“…Solution X-ray scattering measurements were carried out at the 4C beamline [30][31][32] of the Pohang Accelerator Laboratory at Pohang University of Science and Technology. Each micellar solution was filtered through a disposable syringe equipped with a polytetrafluoroethylene filter with a 0.2 μm pore size before measurements.…”
Section: Synchrotron X-ray Scattering Measurementsmentioning
confidence: 99%
“…Star-shaped poly(ε-caprolactone)s (PCLs) are widely applied as pore generators (organic templates) in nanoporous material research [3][4][5][6][7][8][9][10]17]. These templates used in this work bear aliphatic ether cores, and four (or six) polyester arms.…”
Section: Resultsmentioning
confidence: 99%
“…Nanoporous silicate thin films are considered as important materials for advanced electronics. The formation of air-filled nanopores is a key technology for preparing insulating materials [3][4][5][6][7][8][9][10][11][12]. Polymethylsilsesquioxane (PMSSQ), with the empirical formula of (CH 3 -SiO 1.5 )n, is a potential candidate for low dielectric spin-on glass [13].…”
Section: Introductionmentioning
confidence: 99%
“…GIXS measurements were carried out with an incident angle α i of 0.132 − 0.154°using a two-dimensional (2D) chargecoupled detector (MAR USA, Evanston, IL, USA) at the 3C beamline of the Pohang Accelerator Laboratory in accordance with the method reported in the literature. 32,33 X-ray radiation sources with a wavelength λ of 0.1117 and 0.1166 nm were used. The sample-to-detector distances were 229.0 and 233.9 mm.…”
Section: Measurementsmentioning
confidence: 99%