Ultralow-Power SOTB CMOS Technology Operating Down to 0.4 V

Abstract

Ultralow-voltage (ULV) CMOS will be a core building block of highly energy efficient electronics. Although the operation at the minimum energy point (MEP) is effective for ULP CMOS circuits, its slow operation speed often means that it is not used in many applications. The silicon-on-thin-buried-oxide (SOTB) CMOS is a strong candidate for the ultralow-power (ULP) electronics because of its small variability and back-bias control. Proper power and performance optimization with adaptive V th control

Mobility model for advanced SOI-MOSFETs including back-gate contribution

“…[4][5][6] The V th control is exploited to realize reliable low voltage applications. 7) The SOTB structure is close to the ultimate double-gate structure enabling higher circuit performance due to higher current and additionally smaller subthreshold swing. This investigation aims at accurate compact modeling of these SOTB-structure advantages, so that reliable circuit design becomes possible.…”

Optimization of Low-Voltage-Operating Conditions for MG-MOSFETs

“…HIN film multi-gate (MG) MOSFETs are widely acknowledged as an attractive alternative for lowvoltage-circuit applications, due to an additional independently-controllable back-gate [1][2][3]. The Silicon on thin SOI layer (ETSOI) MOSFET has been widely studied with relatively thick Buried Oxide (BOX) [4][5][6][7], where the body is separated from the substrate by a BOX layer to reduce the effects of parasitic capacitances and undesired punch-through currents [8].…”

Scaling Trends of Digital Single-Event Effects: A Survey of SEU and SET Parameters and Comparison With Transistor Performance

“…Some of them further rely on a triple-well structure, which is similar to that in Bulk case but not directly connected to the transistors, because it is formed underneath the BOX. This buried-well option is favorable for low power consumption, because it enables control of the transistors' threshold voltage ( ) by feeding back-bias voltages through the capacitance coupling principle [168], [169]. The transistors are no longer completely isolated from each other, however, and a potential perturbation in a well can thus spread among cells.…”