Ultrascaled InAlN/GaN High Electron Mobility Transistors with Cutoff Frequency of 400 GHz

Yue, Yuanzheng; Hu, Zongyang; Guo, Jia; Sensale‐Rodriguez, Berardi; Li, Guowang; Wang, Ronghua; Faria, Faiza Afroz; Song, Bo; Gao, Xiang; Guo, Shiping; Kosel, T.H.; Snider, Gregory L.; Fay, Patrick; Jena, Debdeep; Xing, Huili Grace

doi:10.7567/jjap.52.08jn14

Cited by 82 publications

(63 citation statements)

References 10 publications

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“…State-of-art gallium nitride based electronic devices have demonstrated excellent performance in highfrequency and high-power applications [1][2][3][4][5] . These devices are on thick GaN buffer layers, most of which are on SiC substrates for efficient thermal dissipation.…”

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confidence: 99%

Strained GaN quantum-well FETs on single crystal bulk AlN substrates

Ganguly

et al. 2017

Applied Physics Letters

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We report the first realization of molecular beam epitaxy grown strained GaN quantum well field-effect transistors on single-crystal bulk AlN substrates. The fabricated double heterostructure FETs exhibit a twodimensional electron gas (2DEG) density in excess of 2×10 13 /cm 2 . Ohmic contacts to the 2DEG channel were formed by n + GaN MBE regrowth process, with a contact resistance of 0.13 Ω·mm. Raman spectroscopy using the quantum well as an optical marker reveals the strain in the quantum well, and strain relaxation in the regrown GaN contacts. A 65-nm-long rectangular-gate device showed a record high DC drain current drive of 2.0 A/mm and peak extrinsic transconductance of 250 mS/mm. Small-signal RF performance of the device achieved current gain cutoff frequency f T ∼ 120 GHz. The DC and RF performance demonstrate that bulk AlN substrates offer an attractive alternative platform for strained quantum well nitride transistors for future high-voltage and high-power microwave applications.State-of-art gallium nitride based electronic devices have demonstrated excellent performance in highfrequency and high-power applications 1-5 . These devices are on thick GaN buffer layers, most of which are on SiC substrates for efficient thermal dissipation. The heteroepitaxially grown GaN layers inherently incorporate high density of dislocations (typically ∼ 10 9 /cm 2 ), which give rise to reliability issues and degrade breakdown characteristics.In this letter we show that thin strained GaN quantum well double heterostructures on bulk AlN substrates offer an attractive alternative approach for high-performance nitride electronics. To meet the scaling requirements for high-speed high-power RF applications, tight electrostatic control and quantum confinement of charge carriers are highly desired. The wide direct band gap of AlN (∼6.2 eV) and its large band offset with GaN offers the maximal vertical confinement of carriers in nitride channels. The large polarization charge of AlN induces high density two-dimensional electron gases (2DEG) in the quantum well, which is desired for high current drive and lateral scaling of gate lengths. The thermal conductivity of AlN, estimated 6 to be as high as ∼340 W/m·K can be comparable 7 to that of SiC ∼370 W/m·K, and offers the potential benefit of reducing thermal boundary resistance. Thus AlN simultaneously satisfies the conflicting requirements of high thermal conductivity and high electrical resistivity for high-power microwave electronics. Importantly, the low dislocation density (∼ 10 4 /cm 2 ) of single-crystal bulk AlN substrates has the potential for defect-free channels and barriers in principle, which is a promising prospective for improving thermal robustness, reliability, breakdown, and noise characteristics of these devices 8 . The presence of a very thin GaN quantum well active region embedded in the AlN/GaN/AlN double heta) Electronic mail: djena@cornell.edu. erostructure also enables selective optical-marker based Raman metrology of strain 9 present in the active layer...

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confidence: 99%

Strained GaN quantum-well FETs on single crystal bulk AlN substrates

Ganguly

et al. 2017

Applied Physics Letters

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“…Lenka is with Department of Electronics and Communication Engineering, National Institute of Technology, Silchar, India (e-mail: amarnath.nits@gmail.com). material as SiN [4], SiO2 [5], Al2O3 [6], HfO2 [7], La2O3 [8], AlN [9], LaLuO3 [10], MgCaO [3]. Among these oxides, HfO2 is considered in this work.…”

Section: Introductionmentioning

confidence: 99%

Analytical Model Development for Unified 2D Electron Gas Sheet Charge Density of AlInN/GaN MOSHEMT

Amarnath

Lenka

2017

International Journal of Electronics and Telecommunications

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Abstract-We have developed a unified analytical model for computation of 2D electron gas sheet charge density in AlInN/GaN metal-oxide-semiconductor high electron mobility transistor device structure. This model has been developed by incorporating the variation in lowest three energy sub-bands and Fermi level energy in the quantumwell with respect to gate voltage. We noticed that the dependency of lowest sub-band energy with Fermi energy having two fields, which are the lowest sub-band energy is greater and lesser than the Fermi level energy. According to these two fields, we have developed the fermi energy and sheet charge density expressions in each field. By combining each field of the models, developed a unified 2D electron gas sheet charge density model. The Fermi level and sheet charge density are interdependent in the model development. The developed model results are compared with TCAD simulation results and obtain a good consistency between them. This model is fitted to other metal-oxidesemiconductor high electron mobility transistor devices also with modifications in related physical values.

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“…Наиболее перспективными являют-ся барьеры на основе тройных растворов AlGaN и AlInN [2,3]. ГЭС со сверхтонким AlN-барьером при-знаны наиболее подходящими для изготовления тран-зисторов крайне высокого частотного диапазона из-за уменьшения эффектов короткого канала и низкого по-рогового напряжения [4][5][6].…”

Section: Introductionunclassified

AlN/GaN-гетероструктуры для нормально закрытых транзисторов

Журавлев¹,

Малин²,

Мансуров³

et al. 2017

Физика И Техника Полупроводников

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Рассчитана конструкция AlN/GaN гетероструктур со сверхтонким AlN-барьером для нормально закрытых транзисторов. Развита технология молекулярно-лучевой эпитаксии in situ пассивированных гетероструктур SiN/AlN/GaN с двумерным электронным газом. Продемонстрированы нормально закрытые транзисторы с максимальной плотностью тока около 1 А/мм, напряжением насыщения 1 В, крутизной до 350 мС/мм, пробивным напряжением более 60 В. В транзисторах практически отсутствуют эффекты затворного и стокового коллапса тока. DOI: 10.21883/FTP.2017.03.44215.8287

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Ultrascaled InAlN/GaN High Electron Mobility Transistors with Cutoff Frequency of 400 GHz

Cited by 82 publications

References 10 publications

Strained GaN quantum-well FETs on single crystal bulk AlN substrates

Strained GaN quantum-well FETs on single crystal bulk AlN substrates

Analytical Model Development for Unified 2D Electron Gas Sheet Charge Density of AlInN/GaN MOSHEMT

AlN/GaN-гетероструктуры для нормально закрытых транзисторов

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