Ultrasensitive flexible near-infrared photodetectors based on Van der Waals Bi2Te3 nanoplates

Liu, J.L.; Wang, H.; Li, X.; Chen, H.; Zhang, Z.K.; Pan, Wenwu; Luo, Guo Qing; Yuan, Cailei; Ren, Yuchen; Lei, Wen

doi:10.1016/j.apsusc.2019.03.295

Cited by 65 publications

(23 citation statements)

References 45 publications

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“…The device performances of the as-fabricated photodetectors were compared with other Bi 2 Se 3 -based heterostructures and other 2D material-based photodetectors reported in the literature, as summarized in Table . ,,,− The present photodetectors showed significant improvement in the device performance in all aspects. The high responsivity, low dark current, high detectivity, simple low-cost synthesis, and easy fabrication of the photodetector make our Eu-doped Bi 2 Se 3 system a promising platform to develop highly efficient broadband photodetectors.…”

Section: Results and Discussionmentioning

confidence: 90%

Ultrabroadband Absorption and High-Performance Photodetection in Europium-Doped 2D Topological Insulator Bi₂Se₃ Nanosheets

Paul

Hossain

Mia

et al. 2021

ACS Appl. Nano Mater.

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In the pursuit of materials with exceptional optoelectronic functionalities in the visible to mid-IR region, the topological insulators are very promising because they have unique Dirac-like surface states and high light-absorption properties. Herein, we report on a low-temperature, facile, solution-processable method for the synthesis of undoped and Eu-doped 2D layered Bi 2 Se 3 nanosheets (NSs) with exceptional optical functionalities. 2D geometry provides highly effective light absorption and efficient charge transportation via topologically protected surface states of Bi 2 Se 3 NSs. Our study reveals that as-grown Bi 2 Se 3 NSs possess major native defects, particularly the Se vacancies that are responsible for ultrabroadband absorption and bulk conduction. Interestingly, Eu doping in Bi 2 Se 3 partially compensates the intrinsic defects, and the Eu-doped Bi 2 Se 3 NSs show reduced band gap and very high absorption coefficient (2.87 × 10 5 cm −1 ) over the broad range of 400−2500 nm. We achieve a lower dark current and a higher photocurrent with increasing doping concentration. Interestingly, the undoped Bi 2 Se 3 NSs exhibited negative photoconductivity, which is completely suppressed in the Eu-doped Bi 2 Se 3 NSs due to the reduction in trapping sites. The role of defects in the ultrabroadband absorption and high photoconductivity was elucidated through the rapid thermal annealing studies. To demonstrate its application, we fabricate a planar photodetector using the Eu-doped 2D Bi 2 Se 3 NSs and investigate device characteristics at specific wavelengths 405, 657, and 808 nm. The device with undoped Bi 2 Se 3 NSs shows the highest photoresponsivity at 405 nm, while the Eu-doped NSs show superior performance at 657 and 808 nm. Additionally, the doped photodetectors possess broadband and high responsivity/ detectivity with a peak responsivity of 130 A/W and a peak detectivity of 1.482 × 10 13 Jones, which are the highest among the reported values. The present report demonstrates an effective strategy to develop ultrabroadband and high-performance optoelectronic applications of doped 2D topological insulators.

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Section: Results and Discussionmentioning

confidence: 90%

Ultrabroadband Absorption and High-Performance Photodetection in Europium-Doped 2D Topological Insulator Bi₂Se₃ Nanosheets

Paul

Hossain

Mia

et al. 2021

ACS Appl. Nano Mater.

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“…As shown by the high‐resolution transmission electron microscopy (TEM) study of the Bi 2 Te 3 nanoplate, no oxygen vacancy were observed. [ 2,9 ] As a result, type (1) trapping states are the main reason for the hysteresis effect observed, which will be studied in details in the following.…”

Section: Resultsmentioning

confidence: 99%

“…The detailed growth conditions are listed in Table S1, Supporting Information, of the supporting information, and the detailed growth process has already been discussed in the previous studies. [ 8,9 ] The characterization results of the grown Bi 2 Te 3 nanoplates, SEM images, atomic force microscopy data, Raman spectrum, energy‐dispersive X‐ray spectrometer data, and TEM results, have also been presented in the previous research. [ 2,8 ]…”

Section: Methodsmentioning

confidence: 99%

“…Most recently, another TI material, Bi 2 Te 3 , has received significant attention due to the interest in its fundamental physics (metallic surface states and strong spin–orbit interaction) as well as potential applications in FETs and infrared detectors. [ 7–9 ] For example, Liu et al. [ 10 ] reported FETs based on Bi 2 Te 3 flakes with atomic‐layer‐deposited (ALD) Al 2 O 3 as the top‐gate and back‐gate dielectric.…”

Section: Introductionmentioning

confidence: 99%

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Hysteresis Effect in Two‐Dimensional Bi₂Te₃ Nanoplate Field‐Effect Transistors

Liu

Pan

Wang

et al. 2020

Adv Elect Materials

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Recently, field‐effect transistors (FETs) based on two‐dimensional (2D) Bi2Te3 nanoplates have attracted much attention due to their great potential for fabricating high‐performance electronic devices. However, the gating property measurement of the Bi2Te3 nanoplate FETs exhibits hysteretic behavior in an ambient environment, which degrades not only their electrical properties, but also their device performance. This work presents a systematical study on the origins of this hysteresis effect in 2D Bi2Te3 FETs and explores effective approaches to minimize and eliminate this hysteresis effect. The hysteresis effect in 2D Bi2Te3 nanoplate FETs can be attributed to the charge trap states caused by the water molecules adsorbed on the nanoplate surface. To minimize and eliminate this hysteresis, poly(methyl methacrylate) layer is applied to passivate the 2D Bi2Te3 FETs, which leads to almost hysteresis‐free gating property and thus improves the carrier mobility and device performance. These results indicate that the surface/interface trap states of nanostructures can significantly influence their electrical properties and thus device performance, and as a result, surface passivation is required to minimize the influence of the surface/interface trap states and achieve high device performance.

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“…One-dimensional (1D) semiconductor nanowires (NWs) have been identified as potential building blocks for nanophotonic integrated devices because of their superior light trapping characteristics, high crystal quality, and heterogeneous integration of diverse NW materials and substrate combination caused by the relaxed lattice matching condition. − Similarly, 2D materials have also emerged as an excellent platform for flexible device growth because of their weak van der Waals interaction, which similarly leads to relaxed lattice matching conditions. , Hence, heterogeneous integration of NWs with a 2D material offers opportunities for a broad range of advanced generation flexible optoelectronic device applications, namely, aerial infrared tracking, night vision, wearable devices, mobile applications, medical detection, and petroleum exploration by taking advantage of distinct properties exclusive to the 1D architecture and 2D platform. − Moreover, an NW/2D integrated device may also prove to be very cost-effective. , …”

Section: Introductionmentioning

confidence: 99%

Hybrid GaAsSb/GaAs Heterostructure Core–Shell Nanowire/Graphene and Photodetector Applications

Nalamati

Devkota

et al. 2020

ACS Appl. Electron. Mater.

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We report the growth of vertical, high-quality GaAs0.9Sb0.1 nanowires (NWs) with improved density on oxygen (O2) plasma-treated monolayer graphene/SiO2/p-Si(111) by self-catalyzed molecular beam epitaxy. An O2 plasma treatment of the graphene under mild conditions enabled modification of the surface functionalization and improved reactivity of the graphene surface to semiconductor adatoms. The rise in the disorder peak of the Raman mode, decreased surface conductivity, and creation of additional O2 groups of plasma-treated graphene compared to that of pristine graphene confirmed functionalization of the graphene. To enhance the nucleation centers further for the vertical yield of NWs on the graphene surface, NWs were grown on a higher Sb composition GaAs0.6Sb0.4 stem for surface engineering the graphene surface via the surfactant effect of Sb and for better lattice matching. The NWs grown under optimal conditions exhibited a zinc blende crystal structure with no discernible structural defects. The NWs with a GaAs-passivated shell exhibited photoluminescence emission at 1.35 eV at 4 K and 1.28 eV at room temperature. The ensemble device fabricated with a top segment of GaAsSb NW-doped n-type using a GaTe captive source exhibited an optical responsivity of 110 A/W with a detectivity of 1.1 × 1014 Jones. These results of hybrid GaAsSb NW heterostructure/graphene devices show significant potential toward the fabrication of flexible near-infrared photodetector device applications. Further, the simple and efficient O2 plasma treatment approach for surface engineering of graphene in conjunction with a high Sb compositional stem has shown to be a promising route that can be broadly applicable for the growth of other III–V ternary material systems for improving the vertical yield of NWs.

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Ultrasensitive flexible near-infrared photodetectors based on Van der Waals Bi2Te3 nanoplates

Cited by 65 publications

References 45 publications

Ultrabroadband Absorption and High-Performance Photodetection in Europium-Doped 2D Topological Insulator Bi₂Se₃ Nanosheets

Ultrabroadband Absorption and High-Performance Photodetection in Europium-Doped 2D Topological Insulator Bi₂Se₃ Nanosheets

Hysteresis Effect in Two‐Dimensional Bi₂Te₃ Nanoplate Field‐Effect Transistors

Hybrid GaAsSb/GaAs Heterostructure Core–Shell Nanowire/Graphene and Photodetector Applications

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Ultrasensitive flexible near-infrared photodetectors based on Van der Waals Bi2Te3 nanoplates

Cited by 65 publications

References 45 publications

Ultrabroadband Absorption and High-Performance Photodetection in Europium-Doped 2D Topological Insulator Bi2Se3 Nanosheets

Ultrabroadband Absorption and High-Performance Photodetection in Europium-Doped 2D Topological Insulator Bi2Se3 Nanosheets

Hysteresis Effect in Two‐Dimensional Bi2Te3 Nanoplate Field‐Effect Transistors

Hybrid GaAsSb/GaAs Heterostructure Core–Shell Nanowire/Graphene and Photodetector Applications

Contact Info

Product

Resources

About

Ultrabroadband Absorption and High-Performance Photodetection in Europium-Doped 2D Topological Insulator Bi₂Se₃ Nanosheets

Ultrabroadband Absorption and High-Performance Photodetection in Europium-Doped 2D Topological Insulator Bi₂Se₃ Nanosheets

Hysteresis Effect in Two‐Dimensional Bi₂Te₃ Nanoplate Field‐Effect Transistors