Ultrasensitive p-n junction UV-C photodetector based on p-Si/β-Ga2O3 nanowire arrays

Pedapudi, Michael Cholines; Dhar, Jay Chandra

doi:10.1016/j.sna.2022.113673

Cited by 19 publications

(3 citation statements)

References 31 publications

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“…At higher frequencies exceeding 14.7 Hz (12.5 Hz), the noise is composed of thermal noise ( ) and shot noise ( ). As a result, the normalized detectivity (D*), which is indicative of the photodetector's ability to detect weak signals, is calculated using the following formula [36] :…”

Section: Resultsmentioning

confidence: 99%

Visible-to-near-infrared photodetectors based on SnS/SnSe₂ and SnSe/SnSe₂ p−n heterostructures with a fast response speed and high normalized detectivity

Zhu,

Duan,

Meng

et al. 2024

J. Semicond.

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The emergent two-dimensional (2D) material, tin diselenide (SnSe2), has garnered significant consideration for its potential in image capturing systems, optical communication, and optoelectronic memory. Nevertheless, SnSe2-based photodetection faces obstacles, including slow response speed and low normalized detectivity. In this work, photodetectors based on SnS/SnSe2 and SnSe/SnSe2 p−n heterostructures have been implemented through a polydimethylsiloxane (PDMS)−assisted transfer method. These photodetectors demonstrate broad-spectrum photoresponse within the 405 to 850 nm wavelength range. The photodetector based on the SnS/SnSe2 heterostructure exhibits a significant responsivity of 4.99 × 103 A∙W−1, normalized detectivity of 5.80 × 1012 cm∙Hz1/2∙W−1, and fast response time of 3.13 ms, respectively, owing to the built-in electric field. Meanwhile, the highest values of responsivity, normalized detectivity, and response time for the photodetector based on the SnSe/SnSe2 heterostructure are 5.91 × 103 A∙W−1, 7.03 × 1012 cm∙Hz1/2∙W−1, and 4.74 ms, respectively. And their photodetection performances transcend those of photodetectors based on individual SnSe2, SnS, SnSe, and other commonly used 2D materials. Our work has demonstrated an effective strategy to improve the performance of SnSe2-based photodetectors and paves the way for their future commercialization.

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Section: Resultsmentioning

confidence: 99%

Visible-to-near-infrared photodetectors based on SnS/SnSe₂ and SnSe/SnSe₂ p−n heterostructures with a fast response speed and high normalized detectivity

Zhu,

Duan,

Meng

et al. 2024

J. Semicond.

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“…In conjunction with a well-known transparent n-type semiconductor such as ZnO or SnO2 [6,7], these devices have a wide range of uses varying from flat-panel displays to transparent solar cells. These p-n junctions would allow solar cells to be placed on pre-existing windows, allowing most optical light to pass and generating electricity through the absorption of UV rays [8,9]. Studies have shown that, by using thin films of CAO coupled with an n-type semiconductor such as ZnO, promising thermoelectric results can be achieved while maintaining optical transparency [10,11].…”

Section: Study Backgroundmentioning

confidence: 99%

Effect of Sintering Temperature on the Properties of CuAlO<sub>2</sub> Synthesized from Nanosized Precursors for Application in Smart Infrastructure Systems

Ghotbi¹,

Mousa²,

Assi³

et al. 2022

Preprint

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The current study aimed to evaluate the influence of different sintering temperatures on the properties of copper aluminum oxide (CuAlO2) pellets synthesized from copper oxide (CuO) and aluminum hydroxide (Al(OH)3) for application in smart infrastructure systems. The pellets were sintered at 400 K, 1000 K, and 1300 K, in the presence of nitrogen gas flow to reduce the amount of oxygen availability. The CuAlO2 sintered nanoparticles were chemically analyzed by X-ray diffractometry, and the nanostructure of the materials was studied by scanning electron microscopy. The transmittance of the sintered materials was examined by ultraviolet/visible (UV/Vis) spectrophotometry, and 88% transparency was observed for the pellets sintered at 1300 K. Electrical conductivity was measured at 0.905 mS/cm, indicating a semiconducting behavior.

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“…Wide-bandgap materials possess bandgaps that are considerably larger than the 3.4 eV bandgap of gallium nitride (GaN), [1][2][3] making them particularly well-suited for solar-blind DUV photodetection and corona discharge detection. [4][5][6][7][8][9] Meanwhile, most recently DUV photodetectors based on molybdenum sulfide (MoS 2 )/GaN p-n heterojunction, [10] Ga 2 O 3 , [1,[11][12][13] Zn 2 GeO 4 Nanowire, [14] lutetium oxide (Lu 2 O 3 ), [15] p-MnO/n-GaN, [16] indium-galliumzinc-oxide (IGZO) thin film [17] have been extensively studied. But some of the materials have limitations like complex synthesis, high-temperature process requirements, defect states, and stability issues.…”

Section: Introductionmentioning

confidence: 99%

Synthesis and Characterization of High‐Quality Ta₂O₅ Nanoparticles for Highly Selective SAW‐Based DUV Sensor and Corona Detection Application

Kim,

Nawaz,

Choi

et al. 2023

Adv Materials Technologies

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In recent times, significant progress is made in the development of solar‐blind deep‐ultraviolet (DUV) photodetectors (200–280 nm) due to their potential applications for military and civil purposes. In this study, the development of a novel solar‐blind DUV photodetector based on tantalum pentoxide (Ta2O5) nanoparticles (NPs) utilizing Surface Acoustic Wave (SAW) sensor integrated with Interface electronics is reported for the first time. The 3‐D Ta2O5 NPs surface morphology, crystallinity, and defect state level is discussed using various analytical techniques, including scanning electron microscope (SEM), X‐ray diffraction (XRD), and spectrophotometer. The developed 3‐D Ta2O5 NPs based photodetector exhibits high sensitivity to 254 nm DUV irradiation (5 µW cm−2), demonstrating excellent photoresponse characteristics. The performance parameters including highest sensitivity, fast response/recovery time are measured as 1621.1 ppm (mW cm−2)−1, 3.7s/19.8s, respectively. Subsequent analysis demonstrates the stability and repeatability of the photodetector, enabling its potential to real time corona discharge detection. With its inherent advantages, the current DUV photodetector utilizing Ta2O5 NPs exhibits great potential for future applications in DUV optoelectronics.

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Ultrasensitive p-n junction UV-C photodetector based on p-Si/β-Ga2O3 nanowire arrays

Cited by 19 publications

References 31 publications

Visible-to-near-infrared photodetectors based on SnS/SnSe₂ and SnSe/SnSe₂ p−n heterostructures with a fast response speed and high normalized detectivity

Visible-to-near-infrared photodetectors based on SnS/SnSe₂ and SnSe/SnSe₂ p−n heterostructures with a fast response speed and high normalized detectivity

Effect of Sintering Temperature on the Properties of CuAlO<sub>2</sub> Synthesized from Nanosized Precursors for Application in Smart Infrastructure Systems

Synthesis and Characterization of High‐Quality Ta₂O₅ Nanoparticles for Highly Selective SAW‐Based DUV Sensor and Corona Detection Application

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Ultrasensitive p-n junction UV-C photodetector based on p-Si/β-Ga2O3 nanowire arrays

Cited by 19 publications

References 31 publications

Visible-to-near-infrared photodetectors based on SnS/SnSe2 and SnSe/SnSe2 p−n heterostructures with a fast response speed and high normalized detectivity

Visible-to-near-infrared photodetectors based on SnS/SnSe2 and SnSe/SnSe2 p−n heterostructures with a fast response speed and high normalized detectivity

Effect of Sintering Temperature on the Properties of CuAlO<sub>2</sub> Synthesized from Nanosized Precursors for Application in Smart Infrastructure Systems

Synthesis and Characterization of High‐Quality Ta2O5 Nanoparticles for Highly Selective SAW‐Based DUV Sensor and Corona Detection Application

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Product

Resources

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Visible-to-near-infrared photodetectors based on SnS/SnSe₂ and SnSe/SnSe₂ p−n heterostructures with a fast response speed and high normalized detectivity

Visible-to-near-infrared photodetectors based on SnS/SnSe₂ and SnSe/SnSe₂ p−n heterostructures with a fast response speed and high normalized detectivity

Synthesis and Characterization of High‐Quality Ta₂O₅ Nanoparticles for Highly Selective SAW‐Based DUV Sensor and Corona Detection Application