Ultrasensitive photodetectors exploiting electrostatic trapping and percolation transport

Zhang, Yingjie; Hellebusch, Daniel J.; Bronstein, Noah D.; Ko, Changhyun; Ogletree, D. Frank; Salmerón, Miquel; Alivisatos, A. Paul

doi:10.1038/ncomms11924

Cited by 70 publications

(75 citation statements)

References 36 publications

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“…High‐performance photoelectric conversion devices are highly desirable either in military or civilian fields because of their promising potential for optical communications, digital imaging, night‐time surveillance, and so on . For the photodetectors, the artificial devices that convert photons to electricity, light‐harvesting materials become the core component .…”

Section: Introductionmentioning

confidence: 99%

Performance‐Enhancing Broadband and Flexible Photodetectors Based on Perovskite/ZnO‐Nanowire Hybrid Structures

Gao

Zhang

Chen

et al. 2017

Advanced Optical Materials

109

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light absorption ability, which significantly restrict their practical applications. [8,9] In addition, a growing demand for broadband light communication or imaging sensing requires high-performance photosensitive materials with a broader photoresponse range, particularly UV-visible photodetections through the use of a single detecting element. [10,11] To this point, silicon-based metal-oxide-semiconductor (MOS) structures are industrially used; nevertheless, the large leakage current caused by a very thin oxide layer leads to a serious breakdown in electrical field. [12] Meanwhile, it is still challenging to achieve a photodetector with a broad spectral region relying on a single semiconductor material like ZnO due to its intrinsic electronic band structure. [13,14] Therefore, new strategies are required for the achievement of excellent UV-visible light sensors established on inorganic semiconductors.Recent researches on hybrid heterostructures focusing on organic and inorganic constituents offer an effective approach to design novel optoelectronic elements with tailored and improved properties. [15] Consequently, perovskites, for example, CH 3 NH 3 PbX 3 (X = Cl, Br, I), have drawn growing attention for serving as light-harvesting cells, in particular for photovoltaic devices with an enhanced performance. [16,17] These materials showing many fascinating properties such as the intrinsic ambipolar transport, high optical absorption coefficient in visible spectral region, tunable band gap, high quantum efficiency, and a long carrier diffusion length, are particularly valuable for optoelectronic and photonic devices such as photodetectors. [18,19] However, the synthesis methods reported in previous literatures will inevitably introduce grain boundaries and large morphological variations in the resultant products; this leads to a relatively high dark current density, one of the major barriers for their practical applications. [20] Therefore, "right" semiconductors (transporting layers) should be used to not only suppress the dark current but also to economize the wonderful light absorbing materials (such as a perovskite layer) to accomplish optimal photoconductivity performance. [21][22][23] Inspired by this, the hybrid approach by combining inorganic semiconductors like ZnO nanowires with organolead halide perovskite may provide an alternative route to fabricate photodetectors that are expected to have an improved photosensitivity and broader spectral response. So A hybrid approach by combining inorganic semiconductors with organolead halide perovskite may provide an alternative and competitive route to acquire light harvesting materials that are expected to have an improved photosensitivity and broader spectral response. Here, the first designed CH 3 NH 3 PbI 3 / ZnO photodetectors reveal a distinguished photoelectric performance (responsivity = 4.00 A W −1 , external quantum efficiency = 1300% @380 nm) with fast response times and an available broadband region up to 760 nm as compared to the pure ZnO nanowire ph...

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Section: Introductionmentioning

confidence: 99%

Performance‐Enhancing Broadband and Flexible Photodetectors Based on Perovskite/ZnO‐Nanowire Hybrid Structures

Gao

Zhang

Chen

et al. 2017

Advanced Optical Materials

109

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“…Fermi level is a critical parameter for understanding transport electronic properties, like resistivity, mobility, and so on. Kelvin probe force microscopy (KPFM) is a powerful technique to provide direct evidence on Fermi level energy 2 Advances in Condensed Matter Physics [31,32]. This experimental technique measures the contact potential difference between a conductive atomic tip and the sample (CPD) [33,34].…”

Section: Introductionmentioning

confidence: 99%

Optical and Electrical Properties of TiO₂/Co/TiO₂Multilayer Films Grown by DC Magnetron Sputtering

Valluzzi

Meyer

et al. 2018

Advances in Condensed Matter Physics

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Transparent oxide multilayer films of TiO2/Co/TiO2 were grown on glass substrate by DC magnetron sputtering technique. The optical and electrical properties of these films were analyzed with the aim of substituting ITO substrate in optoelectronic devices. The samples were characterized by UV-visible spectroscopy, atomic force microscopy (AFM), and Kelvin probe force microscopy (KPFM). The effect of Co interlayer thickness (4, 8, and 12 nm) on the transmittance spectra yielded an optical absorption edge shift. The work function of these films was determined by KPFM technique allowing us to predict the Fermi level shift by extending the model for pure materials to our multilayer system. The Fermi level and optical absorption edge seem to be correlated and shifted toward lower energies when Co interlayer thickness is increased.

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“…The displayed behavior is reminiscent of an ensemble of filled, rather shallow trap states [23]. Applying a small bias in the dark is sufficient to release the immobilized carriers from the trap states.…”

Section: Discussionmentioning

confidence: 92%

Towards Photo-Switchable Transport in Quantum Dot Solids

Schedel

Thalwitzer

Khoshkhoo

et al. 2016

Zeitschrift Für Physikalische Chemie

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Abstract:We use the photochromic organic semiconductor 1,2-Bis(5′-carboxy-2′-methylthien-3′-yl)-cyclopentene (DTCP) to cross-link PbS quantum dots assembled into thin films. The ligand exchange is monitored by means of vibrational spectroscopy (FT-IR) and core-level X-ray photoemission spectroscopy (XPS). Transport measurements in a field-effect transistor (FET) set-up reveal ambipolar behavior with hole and electron mobilities on the order of 10 −4 cm 2 /Vs and 10 −5 cm 2 /Vs, respectively. Exposure to UV light from a 4 W UV lamp does not significantly change the transport properties, indicating that switching of DTCP is hindered in the hybrid film. We find a pronounced photo-conductance with rapid and reversible photo-response on the order of few seconds, which we attribute to (de-)filling of QD trap states. Our results indicate that hybrid, nanostructured networks of PbS QDs cross-linked with DTCP can be obtained by the presented procedure but that switching of the QD-bound DTCP appears to be hindered compared to the pure, unbound molecular species. We discuss future means to address this problem.

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Ultrasensitive photodetectors exploiting electrostatic trapping and percolation transport

Cited by 70 publications

References 36 publications

Performance‐Enhancing Broadband and Flexible Photodetectors Based on Perovskite/ZnO‐Nanowire Hybrid Structures

Performance‐Enhancing Broadband and Flexible Photodetectors Based on Perovskite/ZnO‐Nanowire Hybrid Structures

Optical and Electrical Properties of TiO₂/Co/TiO₂Multilayer Films Grown by DC Magnetron Sputtering

Towards Photo-Switchable Transport in Quantum Dot Solids

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Ultrasensitive photodetectors exploiting electrostatic trapping and percolation transport

Cited by 70 publications

References 36 publications

Performance‐Enhancing Broadband and Flexible Photodetectors Based on Perovskite/ZnO‐Nanowire Hybrid Structures

Performance‐Enhancing Broadband and Flexible Photodetectors Based on Perovskite/ZnO‐Nanowire Hybrid Structures

Optical and Electrical Properties of TiO2/Co/TiO2Multilayer Films Grown by DC Magnetron Sputtering

Towards Photo-Switchable Transport in Quantum Dot Solids

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Product

Resources

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Optical and Electrical Properties of TiO₂/Co/TiO₂Multilayer Films Grown by DC Magnetron Sputtering