Ultrashallow Arsenic n⁺/p Junction Formed by AsH₃ Plasma Doping

Abstract

We have investigated the ultrashallow n+/p junction formed by AsH3 plasma doping (PLAD) and the effect of hydrogen on dopant activation. Since hydrogen balance gas (99% H2) was used for AsH3 PLAD, the incorporation of a significant concentration of hydrogen resulted after PLAD. The incorporated hydrogen caused various problems, such as low dopant activation, high resistance, and high leakage current. These problems were traced to hydrogen-induced damage, which was confirmed by cross-sectional transmission electron microscopy (XTEM). Therefore, pre-annealing at low temperature, which can effectively reduce the undesired hydrogen effects, is a necessary step toward obtaining a high-quality, ultrashallow arsenic n+/p junction via AsH3 PLAD.

Prediction of subgap states in Zn- and Sn-based oxides using various exchange-correlation functionals

“…In crystalline ZnO, for example, subgap states cause a characteristic green luminescence. 1 In amorphous oxide semiconductors like a-In-Ga-Zn-O or a-Zn-Sn-O which are used for thin-film-transistor liquidcrystal displays on flexible substrates, these subgap states may be the reason why p-type inversion operations in thin-film-transistors have not been achieved so far. 2 The microstructural origin of the subgap states in a-In-Ga-Zn-O and in other amorphous oxides is currently under debate.…”

Emblica officinalis leaf extract mediated synthesis of zinc oxide nanoparticles for antibacterial and photocatalytic activities

“…The blue emissions at 478 nm, together with the blue green emission at 492 nm are probably from oxygen vacancies or other defects. The origin of green emission at 528 nm can be ascribed to the single ionized oxygen vacancies [29][30][31]. These oxygen vacancies are allowed to be recombine with the photo generated holes and resulted in green emission.…”

Recent Insights In Solid Phase Epitaxy of Silicon and Germanium

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