Single-walled carbon nanotubes as emerging quantum-light sources may fill a technological gap in silicon photonics due to their potential use as near-infrared, electrically-driven, classical or nonclassical emitters. Unlike in photoluminescence, where nanotubes are excited with light, electrical excitation of single-tubes is challenging and heavily influenced by device fabrication, architecture and biasing conditions. Here we present electroluminescence spectroscopy data of ultra-short channel devices made from (9,8) carbon nanotubes emitting in the telecom band. Emissions are stable under current biasing and no quenching is observed down to 10 nm gap size. Low-temperature electroluminescence spectroscopy data also reported exhibits cold emission and linewidths down to 2 meV at 4 K. Electroluminescence excitation maps give evidence that carrier recombination is the mechanism for light generation in short channels. Excitonic and trionic emissions can be switched on and off by gate voltage and corresponding emission efficiency maps were compiled. Insights are gained into the influence of acoustic phonons on the linewidth, absence of intensity saturation and exciton-exciton annihilation, environmental effects like dielectric screening and strain on the emission wavelength, and conditions to suppress hysteresis and establish optimum operation conditions.
Supporting InformationContent: Data on the high bias dependence of excitonic emission (Fig. S1), electrical biasing and power dissipation versus light emission from excitons and trions in a hole-doped (9,8)-device ( Fig. S2), impact of annealing on transconductance curve (Fig. S3), and measurements and simulations regarding the electroluminescence detection efficiency of the setup.