Ultrasmall optical pickup module

Kim, Sang-Cheon; Kim, Young‐Sik; Lee, See-Hyung; Lee, Man-Hyung; Kim, Jin–Yong

doi:10.1117/12.533123

Cited by 3 publications

(3 citation statements)

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“…In the second paper, Dr. Kim (2003) provides a thoughtful, carefully articulated conceptual analysis of understanding "the placebo question". He characterizes the benefits and burdens of placebos in psychiatric research, encompassing elements such as our actual experience with different risks, burdens, limits, benefits, and advantages of this design strategy.…”

Section: Ethical Issues In Basic and Clinical Researchmentioning

confidence: 99%

A time of promise, a time of promises: ethical issues in advancing psychopharmacological research

Roberts

Krystal

2003

Psychopharmacology

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Section: Ethical Issues In Basic and Clinical Researchmentioning

confidence: 99%

A time of promise, a time of promises: ethical issues in advancing psychopharmacological research

Roberts

Krystal

2003

Psychopharmacology

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“…Also, CD, mask error enhancement factor (MEEF), and photo process margin have to be checked using photolithography simulation with its OPC model. 5,6) Then, it is necessary to give priority to inside corner or inside line-end segment size, and adjust the adjoined segments according to photo simulation results in some iteration. An example of this restricted OPC pattern and its simulation results are shown in Fig.…”

Section: New Dissection Control Programmentioning

confidence: 99%

“…This OPC model was applied to metal layers in the CMOS logic process, and was used for the simulation check across the entire chip. 5,6) As the result of this OPC verification, OPC critical patterns occur everywhere, because of the lack of sufficient process margin check.…”

Section: Introductionmentioning

confidence: 99%

Restricted Optical Proximity Effect Correction Pattern Generation Based on Optical Proximity Effect Correction-Design for Manufacturability Rule in Model-Based Optical Proximity Effect Correction: Application for Metal Layer in Complementary Metal–Oxide–Semiconductor Logic Process

Harazaki¹,

Yoshioka²,

Ohmori³

et al. 2007

jjap

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In the recent submicron technologies, the pattern formation on photomasks is increasing in its difficulty owing to the complexity of optical proximity effect correction (OPC) and resolution enhancement techniques (RET). The detection and repair of critical patterns after OPC or RET have become essential procedures for photomask preparation, and design rule check (DRC) or lithography simulation tools have often been used to verify these patterns. However, the detection and repair of critical patterns have been becoming an excessive burden in the development of lithography processes and mask data processing. In this paper, we describe how to detect and repair these OPC critical patterns in lithography using the OPC-DFM rule, which can be derived from the OPC extraction test element group (TEG) effectively and easily. This technology enables the removal of OPC critical patterns before photomask preparation.

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