Ultrasoft X-Ray Emission Spectroscopic Analysis for Effects of Vacuum Ultraviolet Rare Gas Excimer Laser Irradiation on Silicon Nitride Films

Kurmaev, E.Z.; Shamin, S. N.; Dolgih, V.E.; Kurosawa, Kou; Nakamae, Kazuo; Takigawa, Yasuo; Kameyama, Akihiro; Yokotani, Atsushi; Sasaki, Wataru

doi:10.1143/jjap.33.l1549

Cited by 8 publications

(4 citation statements)

References 6 publications

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“…The precipitation of Si nanoparticles was observed in earlier XES measurements of semiconducting Si 3 N 4 and SiO 2 films induced by excimer laser and electron beam irradiation. 29,30,7 C. Compositional and structural changes during annealing Figure 6 displays the measurements of carbon K␣ XES of PTES films after annealing at 1000°C, and after combined treatments of irradiation and annealing. One observes that the annealing of the unirradiated PTES films modifies the fine structure of the carbon K␣ XES, revealing some spectral features that are typical for spectra of sp 2 hybridized graphite ͑see Fig.…”

Section: B Local Structure Of Irradiated Ptes Filmsmentioning

confidence: 99%

X-ray fluorescence study of organic-inorganic polymer conversion into ceramics induced by ion irradiation

et al. 1999

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Changes to the local and electronic structures of phenyltriethoxysilane ͑PTES͒ films when irradiated at room temperature with gold ion concentrations of 5ϫ10 14 to 2.5ϫ10 15 cm Ϫ2 and with carbon ion concentrations of 5ϫ10 15 cm Ϫ2 were studied using x-ray emission and photoelectron spectroscopies. The fluorescent ultrasoft silicon L II,III and carbon K␣ x-ray emission spectra of unirradiated and irradiated PTES films were measured at the Advanced Light Source, and the Center for Advanced Microstructures and Devices. It is found that the PTES polymers that are exposed to ion doses higher than 5ϫ10 14 cm Ϫ2 convert to Si:O:C ceramics. Annealing the irradiated PTES polymer films at 1000°C segregates the carbon atoms into sp 2 -like clusters.

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Section: B Local Structure Of Irradiated Ptes Filmsmentioning

confidence: 99%

X-ray fluorescence study of organic-inorganic polymer conversion into ceramics induced by ion irradiation

et al. 1999

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“…Si L 2,3 x-ray emission spectra (XES) correspond to the 3s → 2p transition, and probe the distribution of the Si 3s partial density of states in the valence band. It was shown in our previous publications [6][7][8] (see also [9]) that for the silicides, c-Si, a-Si, Si 3 N 4 , and SiO 2 , the Si L 2,3 spectra are distinct from each other. On the other hand, measurements of the Si L 2,3 XES at different electron exciting energies can be used for the nondestructive depth-profiling phase analysis, because of a pronounced dependence of the x-ray yield on the electron excitation depth.…”

Section: Introductionmentioning

confidence: 99%

“…With this method, we have constructed depth profiles of elements and phases within interfaces [10]. We used this method for characterization of interfaces in Fe + -implanted Si [10], W/Si multilayers [11], Si 3 N 4 thin films irradiated by an excimer laser [6], and Hf/Si and Ir/Si systems after thermal annealing [12,13].…”

Section: Introductionmentioning

confidence: 99%

The influence of high-energy electron irradiation and boron implantation on the oxide thickness in the /Si system

Kurmaev

Shamin

Galakhov

et al. 1997

J. Phys.: Condens. Matter

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The system exposed to irradiation with 11 - 12 MeV electrons was studied by soft-x-ray emission spectroscopy using the variable-exciting-electron-energy, optical ellipsometry, and nuclear reaction techniques. For the system prepared on an n-substrate, oxidation of Si was observed, and the thickness of the layer after electron irradiation was estimated. For the system prepared on a p-Si substrate, irradiation-induced oxidation was not observed. It was found that preliminary boron implantation in the -Si system blocks oxidation of the n-Si substrate exposed to electron irradiation.

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“…Thus, the present paper reports on investigations of the local electronic structure of porous and spark-processed silicon utilizing x-ray emission spectroscopy. It has been shown that this technique is very sensitive to the chemical bonding and its modification under different sample treatments in Si-containing materials [17][18][19].…”

Section: Introductionmentioning

confidence: 99%

X-ray emission spectra and the effect of oxidation on the local structure of porous and spark-processed silicon

Kurmaev

Shamin

Galakhov

et al. 1997

J. Phys.: Condens. Matter

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The paper presents a comparison of x-ray emission spectra of porous silicon (P-Si) and of spark-processed silicon (sp-Si). Both types of Si structure display strong photoluminescence in the visible range of the spectrum. Porous samples were prepared by anodization of and Si wafers. Whereas for the P-Si processed from Si the presence of some amorphous silicon is detected, the x-ray emission spectra of porous Si prepared from Si display a higher content of . For spark-processed Si the x-ray emission spectra reveal a much stronger degree of oxidation which extends to depths larger than 10 000 Å. Furthermore, the chemical state of silicon atoms of sp-Si measured at the centre of the processed area is close to that of silicon dioxide, and depends slightly on the emission maximum. Specifically, green-photoluminescing sp-Si shows a higher degree of oxidation than the blue-luminescing specimen. However, the depth of oxidation consistently decreases for areas with weak photoluminescence and without photoluminescence. Possible origins for the photoluminescence are discussed.

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Ultrasoft X-Ray Emission Spectroscopic Analysis for Effects of Vacuum Ultraviolet Rare Gas Excimer Laser Irradiation on Silicon Nitride Films

Cited by 8 publications

References 6 publications

X-ray fluorescence study of organic-inorganic polymer conversion into ceramics induced by ion irradiation

X-ray fluorescence study of organic-inorganic polymer conversion into ceramics induced by ion irradiation

The influence of high-energy electron irradiation and boron implantation on the oxide thickness in the /Si system

X-ray emission spectra and the effect of oxidation on the local structure of porous and spark-processed silicon

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