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A full study of the electronic structure of 4d and 5d silicides (RuSi, RhSi, PdSi, OsSi, IrSi, , PtSi) is undertaken including XPS VB and XES ( and ) measurements and LMTO band structure calculations. It is found that d bands which dominate the density of states are more localized with increasing atomic number Z of the transition metal. A strong hybridization between silicon 3p and transition metal d states occurs over the entire valence band. Si 3s states are found to be not mixed with Si 3p and nd states but Si 3d states participate in bonding and hybridize with transition metal d states. The non-bonding character of the majority of nd states is not confirmed for 4d and 5d silicides.

Abstracr SKcr~,z and SKpl fluorescence x-ray emission speetraof YBa2[CuO,-,(NiS),I30~-~ (x = 0.01; 0.03) are investigated. According to analysis of their energy position and fine smcture one can conclude [hat sulphur atoms enter the lanice of Y 123 compounds and form oxyanion groups. The oxidation slate of S atoms in these compounds depends on their concentration and varies from 4+ to 6+.~.

The results of measurements of Si-L2,3 X-ray emission spectra of Si3N4 films deposited on GaAs substrates after irradiation by Kr2 and Ar2 excimer lasers are presented. By using the excitation of X-ray emission spectra with focused electron beam, local precipitation of crystalline silicon is found.

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