2013
DOI: 10.7567/jjap.52.05db10
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Ultrasonic Bonding of Cone Bump for Integration of Large-Scale Integrated Circuits in Flexible Electronics

Abstract: This paper reports that room-temperature bonding of LSI chips to metalization on a plastic film made of poly(ethylene naphthalate) (PEN) can be realized by ultrasonic bonding of a cone-shaped microbump made of Au. A 20-µm-pitch area array of cone-shaped Au microbumps was fabricated on a Si wafer by photolithography and electroplating. The counter electrode on the PEN film was composed of a Au (top)/Ni/Al (bottom) layered structure, where Ni and Au layers were deposited by electroless plating on Al interconnect… Show more

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Cited by 4 publications
(4 citation statements)
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“…Furthermore, the electrodes of adhesive-assisted connectors are not bonded, but they are contacted to the electrodes of a substrate. To ensure further reliability, the use of ultrasonic bonding 30) and low-temperature ink for metal bonding 31) may be an excellent method for interconnection. We will attempt the fabrication of flexible connectors using such ink and establish the connection process using the printed connectors in future work.…”
Section: Maskmentioning
confidence: 99%
“…Furthermore, the electrodes of adhesive-assisted connectors are not bonded, but they are contacted to the electrodes of a substrate. To ensure further reliability, the use of ultrasonic bonding 30) and low-temperature ink for metal bonding 31) may be an excellent method for interconnection. We will attempt the fabrication of flexible connectors using such ink and establish the connection process using the printed connectors in future work.…”
Section: Maskmentioning
confidence: 99%
“…[4][5][6] In our previous work, room-temperature bonding of an InGaAs/InP chip to a Si CMOS chip has been realized by using a cone-shaped Au microbump with ultrasonic application. 7,8) The bonding technology has been extended to boding Si chips to interconnects on poly(ethylene naphthalate) (PEN) film, 9) which can be applied to flexible electronics. The bonding on PEN film also requires lowtemperature bonding because PEN film has a glass transition temperature of about 150 °C and softening of PEN occurs at elevated temperature.…”
Section: Introductionmentioning
confidence: 99%
“…In this work, we fabricate NIR image sensor using ultrasonic bonding of cone bumps. The ultrasonic bonding of cone bump makes it possible to realize a large number of inter-chip connections at room temperature [2,3]. To fabricate a NIR image sensor, an InGaAs photodiode array on an InP was stacked on Si CMOS readout IC by the cone bump.…”
Section: Introductionmentioning
confidence: 99%
“…In fact, we have shown that the ultrasonic bonding of the cone bump offers room-temperature Au-Au bonding and Cu-Cu bonding. 29,30) However, the realization of a large number of interconnections such as a quarter video graphic array (qVGA) at room temperature is a challenge.…”
Section: Introductionmentioning
confidence: 99%