Ultrathin silicon-on-insulator vertical tunneling transistor

Zaslavsky, Alexander; Aydin, C.; Luryi, Serge; Cristoloveanu, S.; Mariolle, D.; Fraboulet, D.; Deleonibus, S.

doi:10.1063/1.1600832

Cited by 32 publications

(21 citation statements)

References 17 publications

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“…The electronic properties of a similar vertical tunneling transistor (VTT) structure, fabricated by a fully technological SOI process, were recently reported. 12 In order to minimize losses due to free-carrier absorption discussed later, the poly-Si gate is only 20 nm thick and relatively lightly doped 3x10 17 cm -3 ; whereas the Si substrate is minimally doped, with a thin ~20 nm doped layer under the buried oxide to which a back-gate bias V BG can be applied.…”

Section: Proposed Device Structure and Operationmentioning

confidence: 99%

“…As a result, devices based on the existence of sharp 2D quantization in the QW suffer from the subband broadening due to QW thickness nonuniformity. 12 In our device, given a reasonable carrier density in the well, the lateral diffusion of these electrons to the contact regions will not be affected by the local potential dips and hills due to thickness fluctuations. At the same time, recent reports of photoluminescence from Si QW down to 2 nm thickness sandwiched between SiO 2 barriers on SOI indicate that thickness nonuniformity is dropping towards a single monolayer.…”

mentioning

confidence: 92%

“…2, and measurements on the similar VTT design have shown no measurable substrate leakage current for any V BG . 12 Optical mode confinement for far infrared wavelengths has been a major issue in III-V QCL designs because of the relatively small change in refractive index available in the epitaxial III-V heterostructures. Either the combination of a metallic contact on top and a heavily-doped surface-plasmon-supporting semiconductor contact layer on the bottom 4,5 or even all-metal confinement (involving the bonding of the active QCL structure to a metallized substrate, followed by subsequent processing) 6 has been employed.…”

mentioning

confidence: 99%

“…The tunneling current densities measured in the similarly designed VTT structure 12 were far too small to achieve such a charge density in the well, but a thinner SiO 2 tunnel barrier or possibly an alternative dielectric barrier with a smaller barrier height 21 could be used to increase the current density. As for infrared absorption in SiO 2 , the lowest-energy absorbing mode in the IR appears to be the Si-O rocking vibration at ~400 cm -1 , leading to strong absorption near λ = 25 µm that dies out exponentially at longer wavelengths.…”

mentioning

confidence: 99%

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On the Possibility of an Intersubband Laser in Silicon-on-Insulator

Luryi

Zaslavsky

2006

Int. J. Hi. Spe. Ele. Syst.

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As thin Si quantum wells with oxide barriers have become an experimental reality in silicon-on-insulator technology, we discuss the feasibility of a terahertz laser based on an intersubband transition in such a Si quantum well. Electrons tunnel into an upper twodimensional subband from a thin polysilicon gate through an ultrathin tunneling oxide and are extracted laterally from the Si well by diffusion. Population inversion arises because lateral diffusion to the contacts can be a faster process than intersubband relaxation and also because the in-plane diffusivity in the upper subband is suppressed by the interaction with a nearby subband characterized by a heavy in-plane mass. Thick oxide layers provide optical confinement and the main optical loss mechanism is the weak free-carrier absorption in thin doped regions in the polysilicon gate and substrate. A voltage on the substrate may provide some tunability of the gain peak.

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Section: Proposed Device Structure and Operationmentioning

confidence: 99%

mentioning

confidence: 92%

mentioning

confidence: 99%

mentioning

confidence: 99%

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On the Possibility of an Intersubband Laser in Silicon-on-Insulator

Luryi

Zaslavsky

2006

Int. J. Hi. Spe. Ele. Syst.

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“…The downsizing also provides Si with unique characteristics including band-gap opening, 1,2 energy-level quantization, 3,4 and valley splitting, 5,6 which open ways for fascinating applications, e.g., a resonant tunneling diodes, 3 a light emitting diodes, 6,7 and a tool for tunneling spectroscopy. 4 In particular, tunneling spectroscopy, which is typically done using a scanning tunneling microscopy (STM), provides not only information about energy quantization, not observable in conventional current characteristics of FETs, but also can be used to implement light emitting devices.…”

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confidence: 99%

Observing the semiconducting band-gap alignment of MoS2 layers of different atomic thicknesses using a MoS2/SiO2/Si heterojunction tunnel diode

Nishiguchi

Castellanos-Gómez

Yamaguchi

et al. 2015

Applied Physics Letters

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We demonstrate a tunnel diode composed of a vertical MoS 2 /SiO 2 /Si heterostructure. A MoS 2 flake consisting four areas of different thicknesses functions as a gate terminal of a silicon field-effect transistor. A thin gate oxide allows tunneling current to flow between the n-type MoS 2 layers and p-type Si channel. The tunneling-current characteristics show multiple negative differential resistance features, which we interpret as an indication of different conduction-band alignments of the MoS 2 layers of different thicknesses. The presented tunnel device can be also used as a hybrid-heterostructure device combining the advantages of two-dimensional materials with those of silicon transistors. V C 2015 AIP Publishing LLC. [http://dx.doi.org/10.1063/1.4927529] Downsizing of Si field-effect transistors (FETs) has allowed ever-advancing performance and integration of electrical circuits. The downsizing also provides Si with unique characteristics including band-gap opening, 1,2 energy-level quantization, 3,4 and valley splitting, 5,6 which open ways for fascinating applications, e.g., a resonant tunneling diodes, 3 a light emitting diodes, 6,7 and a tool for tunneling spectroscopy. 4 In particular, tunneling spectroscopy, which is typically done using a scanning tunneling microscopy (STM), provides not only information about energy quantization, not observable in conventional current characteristics of FETs, but also can be used to implement light emitting devices. 8 These approaches promise for "More than Moore," which expands functions of Si FETs and their circuits. However, since Si has indirect band gap and heavy electron mass, applications utilizing band-diagram engineering have limitations compared to compound semiconductors. Two-dimensional materials, on the other hand, have recently emerged as a candidate to substitute Si in "Beyond CMOS." With direct bandgaps and lighter electron masses, two-dimensional materials have attracted much attention because of their potential for electronic and optical applications as well as physics. The research on the twodimensional materials had been boosted by the pioneering works on graphene 9,10 and has covered other materials including transition-metal dichalcogenides MX 2 and black phosphorous. 11-13 These two-dimensional materials are composed of layers with strong in-plane bonds and with weak van der Waals force mediated interlayer interactions, making possible to exfoliate them into atomically thin layers. MoS 2 , one of the layered MX 2 materials, has been studied widely for various applications such as transistors, 14,15 photo sensors, 16,17 and valleytronics and spintronics devices. 18,19 In analogy with other two-dimensional materials, the band gap of MoS 2 is modulated by the number of MoS 2 layers, showing an indirect band gap of 1.28 eV in bulk that increases while reducing the number of layers. In the single-layer limit, MoS 2 exhibits a direct band gap of 1.9 eV, 20,21 promising for light-emitting diodes. 22,23 In any applications using two-dimensional ma...

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Mixed Organotin(IV) Chalcogenides: From Molecules to Sn‐S‐Se Semiconducting Thin Films Deposited by Spin‐Coating

Bouška

Strizik

Dostál

et al. 2013

Chemistry A European J

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Put the right spin on it: Mixed monomeric organotin(IV) chalcogenides of the general formula L(2)Sn(2)EX(2) containing two terminal Sn-X (X = Se, Te) bonds were prepared and were tested as potential single-source precursors for the deposition of semiconducting thin films. Spin-coating deposition of [{2,6-(Me(2)NCH(2))(2)C(6)H(3)}SnSe](2)(μ-S), as the useful single-source precursor, provided amorphous Sn-S-Se semiconducting thin films.

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Ultrathin silicon-on-insulator vertical tunneling transistor

Cited by 32 publications

References 17 publications

On the Possibility of an Intersubband Laser in Silicon-on-Insulator

On the Possibility of an Intersubband Laser in Silicon-on-Insulator

Observing the semiconducting band-gap alignment of MoS2 layers of different atomic thicknesses using a MoS2/SiO2/Si heterojunction tunnel diode

Mixed Organotin(IV) Chalcogenides: From Molecules to Sn‐S‐Se Semiconducting Thin Films Deposited by Spin‐Coating

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