Ultrathin silicon oxide prepared by in-line plasma-assisted N2O oxidation (PANO) and the application for n-type polysilicon passivated contact

Huang, Yuqing; Liao, Mingdun; Wang, Zhixue; Guo, Xueqi; Jiang, Chun‐Sheng; Yang, Qing; Yuan, Zhefan; Huang, Dandan; Yang, Jie; Zhang, Xinyu; Wang, Qi; Jin, Hao; Al‐Jassim, Mowafak; Shou, Chunhui; Zeng, Yuheng; Yan, Baojie; Ye, Jichun

doi:10.1016/j.solmat.2019.110389

Cited by 64 publications

(57 citation statements)

References 31 publications

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“…Subsequently, the sample was annealed at 900 C for 30 min for preparing the P-doped poly-SiN x and activating the phosphorus doping. Note that the optimal annealing temperatures at 900 C were similar for the N-free poly-Si passivating contact with PANO SiO x [8] and for the N-alloyed one with NAOS SiO x . The front-side boron-diffused emitter was passivated by ALD-deposited AlO x and PECVD-deposited SiN x stack layers.…”

Section: Methodsmentioning

confidence: 84%

“…The front-side boron-doped emitter was prepared through BBr 3 diffusion, and then the rear surface was polished by alkaline to remove the wrap-round deposited boron diffusion zone. The rear-side ultrathin SiO x layer was prepared in HNO 3 bath (NAOS) or plasma-assisted N 2 O oxidation (PANO) [8] after RCA cleaning and HF dip. A phosphorousdoped a-SiN x :H layer with a thickness of %30 nm was deposited with PECVD on the SiO x .…”

Section: Methodsmentioning

confidence: 99%

“…[7] The optimal passivation quality of phosphorous (P)-doped poly-Si (n-poly-Si) and ultrathin SiO x -coated n-type c-Si wafer (lifetime sample) has realized an implied open-circuit voltage (iV oc ) of >745 mV and a saturated recombination current density ( J 0 ) of <1.5 fA cm À1 . [1,2,8,9] The microstructure and optoelectronic properties of the poly-Si film is of great importance for passivation quality. [10][11][12] In our previous work, we found that the P-doped polycrystalline silicon-carbide (n-poly-SiC x ) film can improve the passivation quality of bifacial TOPCon lifetime samples, manifesting the champion iV oc of 750 mV, [13] much better than the counterpart with the carbon-free n-poly-Si.…”

Section: Introductionmentioning

confidence: 99%

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Passivating Contact with Phosphorus‐Doped Polycrystalline Silicon‐Nitride with an Excellent Implied Open‐Circuit Voltage of 745 mV and Its Application in 23.88% Efficiency TOPCon Solar Cells

et al. 2021

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A P‐doped polycrystalline silicon‐nitride (n‐poly‐SiN x ) as the electron selective collection layer in a tunnel oxide passivated contact (TOPCon) solar cell is reported. The nitrogen content is controlled by the active gas ratio of R = NH3/(SiH4 + NH3) during the plasma‐enhanced chemical vapor deposition (PECVD) process. The effects of R ratio on the material's composition, crystallinity, surface passivation, and contact resistivity are investigated. The poly‐SiN x contact exhibits improved surface passivation in comparison with the reference poly‐Si without N incorporation. The best double‐sided passivated n‐type alkaline‐polished crystalline silicon wafer with the n‐poly‐SiN x /SiO x manifests the highest implied open‐circuit voltage (iV oc) of ≈745 mV, with the corresponding single‐sided saturated current density of 1.7 fA cm−2 and the effective lifetime (τ eff) of 10 ms at the injection level of ≈1 × 1015 cm−3. In contrast, the controlled sample with an n‐poly‐Si/SiO x passivation contact has a maximal iV oc of 738 mV. However, the primary drawback of the N doping is to raise the contact resistivity, but which is still in an acceptable range and shows little effect on the performance of solar cell with full‐area contact. The proof‐of‐concept TOPCon solar cell using the n‐poly‐SiN x /SiO x passivating contact has achieved an efficiency of 23.88%, indicating the potential of the n‐poly‐SiN x for high‐efficiency TOPCon solar cells.

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Section: Methodsmentioning

confidence: 84%

Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Passivating Contact with Phosphorus‐Doped Polycrystalline Silicon‐Nitride with an Excellent Implied Open‐Circuit Voltage of 745 mV and Its Application in 23.88% Efficiency TOPCon Solar Cells

et al. 2021

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“…For all structures with POLO junctions (regardless whether for one or two polarities), growth of the interfacial oxide, poly-Si deposition and a certain post-deposition high-temperature anneal are mandatory. For interfacial oxide growth, several methods like ozone oxidation 37 , 38 , wet chemical oxidation 12 , 38 , 39 , short thermal oxidation or the Plasma Enhanced Chemical Vapor Deposition (PE-CVD) of SiO x 40 have been successfully demonstrated. The most viable option for industrial processing, e.g.…”

Section: Resultsmentioning

confidence: 99%

Simulation-based roadmap for the integration of poly-silicon on oxide contacts into screen-printed crystalline silicon solar cells

Kruse

Schäfer

Haase

et al. 2021

Sci Rep

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We present a simulation-based study for identifying promising cell structures, which integrate poly-Si on oxide junctions into industrial crystalline silicon solar cells. The simulations use best-case measured input parameters to determine efficiency potentials. We also discuss the main challenges of industrially processing these structures. We find that structures based on p-type wafers in which the phosphorus diffusion is replaced by an n-type poly-Si on oxide junction (POLO) in combination with the conventional screen-printed and fired Al contacts show a high efficiency potential. The efficiency gains in comparsion to the 23.7% efficiency simulated for the PERC reference case are 1.0% for the POLO BJ (back junction) structure and 1.8% for the POLO IBC (interdigitated back contact) structure. The POLO BJ and the POLO IBC cells can be processed with lean process flows, which are built on major steps of the PERC process such as the screen-printed Al contacts and the $$\text{Al}_\text{2 }\text{O}_\text{3 }/\text{SiN }$$ Al 2 O 3 / SiN passivation. Cell concepts with contacts using poly-Si for both polarities ($$\text{POLO}^2$$ POLO 2 -concepts) show an even higher efficiency gain potential of 1.3% for a $$\text{POLO}^2$$ POLO 2 BJ cell and 2.2% for a $$\text{POLO}^2$$ POLO 2 IBC cell in comparison to PERC. For these structures further research on poly-Si structuring and screen-printing on p-type poly-Si is necessary.

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“…[8] The key structures of TOPCon SCs are comprised of an ultrathin silicon oxide (SiO x ) layer and a highly doped polysilicon (poly-Si) layer. The SiO x layer can be deposited by various methods, such as wet chemical oxidation, [3,5,9] ozone oxidation, [10,11] thermal oxidation, [11,12] plasma assistant oxidation, [12,13] and atomic layer deposition (ALD). [14,15] A high-quality SiO x layer requires a suitable thickness to provide an excellent level of chemical passivation while allowing charge-carrier-selective…”

mentioning

confidence: 99%

Rapid‐Thermal‐Annealing‐Induced Passivation Degradation and Recovery of Polysilicon Passivated Contact with Czochralski and Cast Multicrystalline Silicon Substrates

Feng

Zeng

Yang

et al. 2021

Physica Status Solidi (a)

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Carrier-selective passivating contacts as one of the most promising technologies for high-efficiency crystalline silicon (c-Si) solar cells (SCs) have been widely exploited for applications in heterojunction SCs, such as intrinsic thin hydrogenated amorphous silicon (a-Si:H) passivation layer (HIT) [1,2] and tunnel oxide passivated contact (TOPCon) SCs. [3][4][5][6] The remarkable advantages of a high open-circuit voltage (V oc ), a low-temperature coefficient, and a simple manufacturing procedure are usually endowed to HIT SCs. However, this type of HIT SC suffers from intrinsic drawbacks as well; for example, it is not compatible with the current mainstream passivated emitter and rear contact (PERC) technology, and it often requires capital-intensive equipment to produce the devices. In contrast, TOPCon technology has the potential to evade these issues, which thus has attracted significant attention in the global photovoltaic community. Apart from the advantage of the high compatibility with the PERC production lines, which could radically reduce manufacturing costs, an additional advantage of high potential efficiencies due to the excellent passivating contacts properties is also realized for TOPCon SCs. Remarkable progress in promoting the efficiency of this type of TOPCon device have been achieved, yielding a lab-scale record efficiency of 26.1%, [7] and a large-area industrial efficiency of 24.58%. [6] It is worthy noting that high-efficiency TOPCon SCs are usually produced using low-cost multicrystalline silicon (mc-Si) wafers, especially for the cast multicrystalline silicon (cast-mc-Si) wafers. [8] The key structures of TOPCon SCs are comprised of an ultrathin silicon oxide (SiO x ) layer and a highly doped polysilicon (poly-Si) layer. The SiO x layer can be deposited by various methods, such as wet chemical oxidation, [3,5,9] ozone oxidation, [10,11] thermal oxidation, [11,12] plasma assistant oxidation, [12,13] and atomic layer deposition (ALD). [14,15] A high-quality SiO x layer requires a suitable thickness to provide an excellent level of chemical passivation while allowing charge-carrier-selective

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Ultrathin silicon oxide prepared by in-line plasma-assisted N2O oxidation (PANO) and the application for n-type polysilicon passivated contact

Cited by 64 publications

References 31 publications

Passivating Contact with Phosphorus‐Doped Polycrystalline Silicon‐Nitride with an Excellent Implied Open‐Circuit Voltage of 745 mV and Its Application in 23.88% Efficiency TOPCon Solar Cells

Passivating Contact with Phosphorus‐Doped Polycrystalline Silicon‐Nitride with an Excellent Implied Open‐Circuit Voltage of 745 mV and Its Application in 23.88% Efficiency TOPCon Solar Cells

Simulation-based roadmap for the integration of poly-silicon on oxide contacts into screen-printed crystalline silicon solar cells

Rapid‐Thermal‐Annealing‐Induced Passivation Degradation and Recovery of Polysilicon Passivated Contact with Czochralski and Cast Multicrystalline Silicon Substrates

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