Ultrathin SiO 2 layer formed by the nitric acid oxidation of Si (NAOS) method to improve the thermal-SiO 2 /Si interface for crystalline Si solar cells

Matsumoto, Tetsuya; Nakajima, Hiroki; Irishika, Daichi; Nonaka, Takaaki; Imamura, Kentaro; Kobayashi, Hikaru

doi:10.1016/j.apsusc.2016.06.001

Cited by 27 publications

(10 citation statements)

References 31 publications

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“…After the construction of Al electrode, Si substrates were transferred to a home-made chamber with controlled humidity of 60% for 2 hr in order to grow an extremely thin layer of Si oxide (1~3 nm) on the surfaces of texturized structures. In addition, a recent literature reported that a very thin layer of Si oxide could also effectively passivate Si surfaces 13 . Next, a PEDOT:PSS dispersion (Clevios PH1000) was spun-coated onto the texturized surfaces at constant speed of 3000 rpm for 1 min and then heated at 120 °C for 15 min under the ambient atmosphere.…”

Section: Methodsmentioning

confidence: 99%

Hybrid black silicon solar cells textured with the interplay of copper-induced galvanic displacement

Hung

Chen

2017

Sci Rep

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Metal-assisted chemical etching (MaCE) has been widely employed for the fabrication of regular silicon (Si) nanowire arrays. These features were originated from the directional etching of Si preferentially along <100> orientations through the catalytic assistance of metals, which could be gold, silver, platinum or palladium. In this study, the dramatic modulation of etching profiles toward pyramidal architectures was undertaken by utilizing copper as catalysts through a facile one-step etching process, which paved the exceptional way on the texturization of Si for advanced photovoltaic applications. Detailed examinations of morphological evolutions, etching kinetics and formation mechanism were performed, validating the distinct etching model on Si contributed from cycling reactions of copper deposition and dissolution under a quasi-stable balance. In addition, impacts of surface texturization on the photovoltaic performance of organic/inorganic hybrid solar cells were revealed through the spatial characterizations of voltage fluctuations upon light mapping analysis. It was found that the pyramidal textures made by copper-induced cycling reactions exhibited the sound antireflection characteristics, and further achieved the leading conversion efficiency of 10.7%, approximately 1.8 times and beyond 1.2 times greater than that of untexturized and nanowire-based solar cells, respectively.

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Section: Methodsmentioning

confidence: 99%

Hybrid black silicon solar cells textured with the interplay of copper-induced galvanic displacement

Hung

Chen

2017

Sci Rep

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“…[32] In contrast, to obtain high passivation quality by SiO x , the film thickness must be increased by hightemperature annealing, followed by forming gas annealing (FGA) to terminate active defects. [33,34] Therefore, the optimization is hardly realized due to the tradeoff between carrier tunneling probability and passivation quality.…”

Section: Introductionmentioning

confidence: 99%

“…However, these SiO x films themselves have inferior passivation quality and need further thickening from %1 up to %5 nm, high-temperature annealing at %1100 °C, and FGA to improve passivation quality. [33,34] As chemical oxide passivation layers, the lowest surface recombination velocity of 42 cm s À1 at an excess carrier density (Δn) of 10 15 cm À3 has been reported, in which SiO x was formed using HNO 3 oxidation and following high-temperature thermal treatment. [33] However, ultrathin SiO x layers with both good passivation quality and carrier tunneling properties have not yet been reported.…”

Section: Introductionmentioning

confidence: 99%

Hole‐Selective Ultrathin Al‐Doped SiO_xPassivation Layer Formed by Immersing in Aluminum Nitrate Aqueous Solution

Nakajima

Ohdaira

2022

Physica Rapid Research Ltrs

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Herein, ultrathin Al‐doped SiOx layer formed by immersing in Al(NO3)3 aqueous solution is introduced. This layer enables high‐level surface passivation with a maximum effective surface recombination velocity (Seff,max) < 16 cm s−1 at an excess carrier density (Δn) of 1 × 1015 cm−3 for 2.5 Ω cm n‐type c‐Si without any other processes such as film deposition in a vacuum chamber, high‐temperature annealing, and hydrogenation. This passivation effect presumably comes from negative fixed charges localized in Al‐doped SiOx layers, forming inversion layers due to upward Si band bending at the SiOx/Si interface. In addition, the Al‐doped SiOx layers facilitate accumulated holes at the interface to tunnel through the layers even though the applied bias is extremely low. The high tunnel current density of holes accumulated in the inversion layers implies that these ultrathin Al‐doped SiOx layers are expected to be favorably implemented for high‐efficiency passivating‐contact c‐Si solar cells.

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“…As an alternative, organic materials with a methyl/allyl group acted as a passivation layer, while the V OC reached only 568 mV. Besides, inorganic materials such as SiO x , were used as the passivation layer, yet they needed strong acid or high-temperature (>450 °C) treatment. He et al.…”

Section: Introductionmentioning

confidence: 99%

Dual Bilayer for Improving Contact Quality and Passivation Enables Efficient Organic/Planar-Si Hybrid Solar Cells with a Champion V_OC of over 656 mV

Qiu

Ren

et al. 2021

ACS Appl. Energy Mater.

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The contact quality between Si and the rear electrode and the passivation of Si play crucial roles in efficient organic/Si hybrid solar cells, especially for the open-circuit voltage (V OC ). Herein, we reported a dual bilayer structure to synergistically improve both rear contact quality and passivation of Si to enhance the performance of organic/planar-Si hybrid solar cells. Series resistance (R S ) extracted by the double diode model, contact quality explored by the Cox and Strack (CS) method, and the work function measured by ultraviolet photoelectron spectroscopy (UPS) revealed that the work function of the rear electrode effectively decreased after adding a metallic bilayer at the interface between Si and the rear electrode, which reduced the contact barrier, led to an Ohmic contact, and facilitated the transportation of electrons. Moreover, the minority carrier lifetime increased from 138.81 to 252.89 μs after applying a surfactant on top of the organic film because of the improved passivation effect. Remarkably, the best power conversion efficiency (PCE) of 14.40% for the dual bilayer planar solar cell is obtained, with a champion V OC of 656.4 mV. We provide an effective and facile strategy to design high efficiency with superior V OC by improving contact quality and passivation simultaneously in the Si-based solar cells.

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Ultrathin SiO 2 layer formed by the nitric acid oxidation of Si (NAOS) method to improve the thermal-SiO 2 /Si interface for crystalline Si solar cells

Cited by 27 publications

References 31 publications

Hybrid black silicon solar cells textured with the interplay of copper-induced galvanic displacement

Hybrid black silicon solar cells textured with the interplay of copper-induced galvanic displacement

Hole‐Selective Ultrathin Al‐Doped SiO_xPassivation Layer Formed by Immersing in Aluminum Nitrate Aqueous Solution

Dual Bilayer for Improving Contact Quality and Passivation Enables Efficient Organic/Planar-Si Hybrid Solar Cells with a Champion V_OC of over 656 mV

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Ultrathin SiO 2 layer formed by the nitric acid oxidation of Si (NAOS) method to improve the thermal-SiO 2 /Si interface for crystalline Si solar cells

Cited by 27 publications

References 31 publications

Hybrid black silicon solar cells textured with the interplay of copper-induced galvanic displacement

Hybrid black silicon solar cells textured with the interplay of copper-induced galvanic displacement

Hole‐Selective Ultrathin Al‐Doped SiOxPassivation Layer Formed by Immersing in Aluminum Nitrate Aqueous Solution

Dual Bilayer for Improving Contact Quality and Passivation Enables Efficient Organic/Planar-Si Hybrid Solar Cells with a Champion VOC of over 656 mV

Contact Info

Product

Resources

About

Hole‐Selective Ultrathin Al‐Doped SiO_xPassivation Layer Formed by Immersing in Aluminum Nitrate Aqueous Solution

Dual Bilayer for Improving Contact Quality and Passivation Enables Efficient Organic/Planar-Si Hybrid Solar Cells with a Champion V_OC of over 656 mV