2019
DOI: 10.1016/j.ceramint.2018.11.114
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Ultraviolet electroluminescence from nanostructural SnO2-based heterojunction with high-pressure synthesized Li-doped ZnO as a hole source

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Cited by 7 publications
(3 citation statements)
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“…In addition, while the peak corresponding to the Sn(200) crystal plane of the S 0 C electrode is the highest, those from S Z C, S 0 MC, and S Z0.5 MC electrodes show relatively consistent height of ( 200) and ( 101 The valance state of Sn was further confirmed by XPS spectra, and the results are shown in Figures 2B-D, 3 and 4. Based on Figures 2C and 3D-F, it can be seen that the peaks located at 495.5 and 487.2 eV match well with the characteristic peaks assigned to Sn 3d 3/2 and Sn 3d 5/2 , respectively, which clearly confirms the formation of Sn(IV) 29,35 on the electrode surface. Two distinct binding energy peaks at 491.7 and 483.1 eV can be observed in Figures 2C and 3D-F, which correspond to Sn 3d 3/2 and Sn 3d 5/2 , respectively, confirming the presence of the Sn(0) species.…”
Section: Resultssupporting
confidence: 61%
“…In addition, while the peak corresponding to the Sn(200) crystal plane of the S 0 C electrode is the highest, those from S Z C, S 0 MC, and S Z0.5 MC electrodes show relatively consistent height of ( 200) and ( 101 The valance state of Sn was further confirmed by XPS spectra, and the results are shown in Figures 2B-D, 3 and 4. Based on Figures 2C and 3D-F, it can be seen that the peaks located at 495.5 and 487.2 eV match well with the characteristic peaks assigned to Sn 3d 3/2 and Sn 3d 5/2 , respectively, which clearly confirms the formation of Sn(IV) 29,35 on the electrode surface. Two distinct binding energy peaks at 491.7 and 483.1 eV can be observed in Figures 2C and 3D-F, which correspond to Sn 3d 3/2 and Sn 3d 5/2 , respectively, confirming the presence of the Sn(0) species.…”
Section: Resultssupporting
confidence: 61%
“…11 Besides, the design and fabrication of ZnO-based UV LEDs are still hindered by the lack of facile and efficient synthesis methods of p-type ZnO materials. 12 Among various wide-band-gap semiconductors, tin dioxide (SnO 2 ) has technically important properties such as 3.6 eV band-gap energy and relatively larger exciton binding energy (∼130 meV), 5,8 which promises efficient exciton emission at room temperature and even at higher temperatures. Due to the outstanding optical and electrical properties, SnO 2 has been intensely studied for its applications in solar cells, 13 catalysis, 14 transparent conducting thin films, 15 gas sensors, 16 and other fields.…”
Section: Introductionmentioning
confidence: 99%
“…Low-dimensional light-emitting diodes (LEDs) featuring in the ultraviolet (UV) band are of fundamental interest in many fields, including medical developments, industrial productions, environmental protections, and biological investigations. Generally, semiconductors with a band gap larger than 3.0 eV (SnO 2 , ZnO, GaN, etc.) are the most promising candidates for fabrication of UV LEDs.…”
Section: Introductionmentioning
confidence: 99%