Ultraviolet laser ablation of fluorine-doped tin oxide thin films for dye-sensitized back-contact solar cells

Yang, Huan; Fu, Dongchuan; Jiang, Ming; Duan, Jun; Zhang, Fei; Zeng, Xiaoyuan; Bach, Udo

doi:10.1016/j.tsf.2013.01.014

Cited by 10 publications

(4 citation statements)

References 14 publications

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“…A few structures have been proposed in this direction. Back‐contact structure, which leads both photoelectrode (PE) and counter electrode (CE) to the back side of the device, was developed from monolithic structure to interdigital structure in recent years, as shown in Figure c,d, respectively. In a back‐contact DSSC in Figure d, CE of Pt/fluorine‐doped tin oxide (FTO) was interdigitally patterned and separated from PE made of TiO 2 , which was about 10 μm thick and not patterned .…”

Section: J–v Parameters Of All the Dsscs In This Workmentioning

confidence: 99%

Lateral Dye‐Sensitized Microscale Solar Cells via Femtosecond Laser Patterning

Zhang

Huang

Bian

et al. 2016

Adv Materials Technologies

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Lateral photoelectrode‐counter electrode structure with microscale interdigital fingers of TiO2/FTO film is constructed for dye‐sensitized solar cells by femtosecond laser patterning. A highest photon‐to‐electron efficiency of 5.18% under AM 1.5G is achieved. A novel tandem DSSC is fabricated with ultracompact structure due to this lateral design, accomplishing 6.21% photon‐to‐electron efficiency.

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Section: J–v Parameters Of All the Dsscs In This Workmentioning

confidence: 99%

Lateral Dye‐Sensitized Microscale Solar Cells via Femtosecond Laser Patterning

Zhang

Huang

Bian

et al. 2016

Adv Materials Technologies

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“…The wet and electrochemical etching processes are completed in a chemical solution, which results in poor controllability and isotropic etching; therefore, they are unsuitable for high-precision patterning processes [17][18][19]. Conversely, the laser etching method causes defects such as poor-quality grooves and cracks on the FTO film surface and substrate, which severely affect the optoelectronic performance and durability of the electrodes [20][21][22]. Therefore, the need for anisotropic etching properties and high uniformity has rendered the dry etching process using plasma the preferred choice for the high-resolution patterning of TCO films.…”

Section: Introductionmentioning

confidence: 99%

Etching characteristics and surface properties of fluorine-doped tin oxide thin films under CF4-based plasma treatment

Lee

Joo

et al. 2022

Appl. Phys. A

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Owing to their low-cost, high-temperature processability, and excellent optoelectronic properties, fluorine-doped tin oxide (FTO) films are widely used as transparent conductive materials to replace indium-tin-oxide films. Dry etching is increasingly preferred for the patterning of FTO films considering the high-resolution patterning process required for microdevice applications. This study investigates the dry etching of FTO thin films using CF4-based plasma treatment and analyzes the changes in the etching characteristics and surface properties based on various conditions. The highest etching rate was observed under pure CF4 conditions, indicating that the chemical etching effect is the primary mechanism during the etching process. Based on the X-ray photoelectron spectroscopy and optical emission spectroscopy results, we determined that the etching of the FTO thin film was caused by the CFX radical in the CF4based plasma. Additionally, the X-ray diffraction results indicate that the plasma etching increased the crystal defects in the FTO film. The etching process smoothened the surface morphology of the FTO film, and the transmittance and bandgap energy were slightly changed as a function of the etching conditions. Additionally, the resistivity of the FTO film improved slightly. The obtained results can benefit the development of high-performance optical devices that use FTO as transparent electrodes.

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“…Antimony doped SnO 2 thin films are currently of considerable interest due to their excellent thermal and chemical stabilities, good mechanical durability, abundance and low cost compared to the more widely used ITO materials. Doped and undoped tin oxide films can be deposited by several methods such as sol-gel [7,17], co-precipitation [18][19], pulsed laser deposition [20][21], sputtering [22][23], SILAR [24], electrodeposition [25], chemical bath deposition [26], chemical vapor deposition [27], and spray pyrolysis [4,8,[12][13][14][28][29][30][31]. Spray pyrolysis technique is preferred among these techniques since it is easy in controlling and tailoring the film properties for desired application by changing spray conditions.…”

Section: Introductionmentioning

confidence: 99%

Influence of film thickness on structural, optical, and electrical properties of spray deposited antimony doped SnO2 thin films

Yadav¹

2015

Thin Solid Films

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Ultraviolet laser ablation of fluorine-doped tin oxide thin films for dye-sensitized back-contact solar cells

Cited by 10 publications

References 14 publications

Lateral Dye‐Sensitized Microscale Solar Cells via Femtosecond Laser Patterning

Lateral Dye‐Sensitized Microscale Solar Cells via Femtosecond Laser Patterning

Etching characteristics and surface properties of fluorine-doped tin oxide thin films under CF4-based plasma treatment

Influence of film thickness on structural, optical, and electrical properties of spray deposited antimony doped SnO2 thin films

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