Ultraviolet Light-Emitting Diodes for Water Disinfection

Lange, Marlene A.; Kolbe, Tim; Jekel, Martin

doi:10.1007/978-3-319-24100-5_10

Cited by 1 publication

(1 citation statement)

References 33 publications

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“…Over the last decade or so, a significant amount of research has been devoted towards demonstrating UV-lasers by various research groups [3]. This is mainly because these lasers can enable a number of important and emerging applications including phototherapy in the medical sector [4], water sterilization [5], trace gas sensing [6], polymer curation, indoor plant growth and horticulture, as well as stimulating the formation of anti-cancerogenic substances [7]. Electrically-pumped lasers have been recently achieved down to 336 nm by achieving low defect density templates, and optimization of materials growth [8,9].…”

Section: Introductionmentioning

confidence: 99%

Design of AlGaN-based lasers with a buried tunnel junction for sub-300 nm emission

Arafin

Hasan

Jamal-Eddine

et al. 2019

Semicond. Sci. Technol.

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This paper discusses the design of electrically-pumped AlGaN-based in-plane lasers emitting at ∼290 nm. Our laser design utilizes strained Al 0.5 Ga 0.5 N quantum wells, and a novel polarization engineered AlGaN/InGaN/AlGaN-based tunnel junction. The low resistive tunnel junction is used as an intracavity contact in the device in place of the resistive p-type contact; which leads to improved hole injection and a reduced threshold voltage. Hence, room-temperature continuouswave laser operation could be enabled. Strategies to improve the performance of the tunnel junction contact through the incorporation of low concentrations of boron in the highly-doped AlGaN tunnel junction layers as a means to increase the polarization sheet charge are also discussed.

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