Ultraviolet random lasing from asymmetrically contacted MgZnO metal-semiconductor-metal device

Morshed, Muhammad; Suja, Mohammad; Zuo, Zheng-Wei; Liu, Jianlin

doi:10.1063/1.4902921

Cited by 12 publications

(13 citation statements)

References 37 publications

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“…In contrast, the important role of surface diffusion in the growth of GaAs nanowires was proposed theoretically, in which the surface diffusion dominates their morphologies and the diffusion coefficient was estimated to be 10 –6 cm 2 /s . ZnO nanowires are one of the most important semiconductor nanomaterials and have been endeavored to understand the incorporation of impurities in order to manipulate the doping level . Here, we present a quantitative study of Ga incorporation in ZnO nanowires epitaxially grown on GaN/sapphire substrate.…”

Section: Introductionmentioning

confidence: 94%

Spontaneous Ga incorporation in ZnO nanowires epitaxially grown on GaN substrate

Wang

Sun

Sheng

et al. 2015

Phys. Status Solidi RRL

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Surface‐diffusion‐induced spontaneous Ga incorporation process is demonstrated in ZnO nanowires grown on GaN substrate. Crucially, contrasting distributions of Ga atoms in axial and radial directions are experimentally observed. Ga atoms uniformly distribute along the ∼10 μm long ZnO nanowire and show a rapidly gradient distribution in the radial direction, which is attributed substantially to the difference between surface and volume diffusion. The understanding on the incorporation process can potentially modulate doping and properties in semiconductor nanomaterials. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)

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Section: Introductionmentioning

confidence: 94%

Spontaneous Ga incorporation in ZnO nanowires epitaxially grown on GaN substrate

Wang

Sun

Sheng

et al. 2015

Phys. Status Solidi RRL

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“…[1][2][3][4] In particular, the MgZnO alloy system covers a wide ultraviolet (UV) spectral range between the direct bandgaps of $3.37 eV for ZnO and $7.8 eV for MgO at room temperature, and is very attractive for short-wavelength optical applications such as UV detectors and UV light emitters. 5,6 MgZnO alloys with different bandgap energies can be used to form ZnO/MgZnO or MgZnO/MgO multilayer quantum wells (QWs) heterostructure in UV light emitting diodes and laser diodes. 7,8 Therefore, in order to calculate the band alignment for designing and engineering a device, it is important to investigate the fundamental bandgap of MgZnO epitaxial films in all Mg content range.…”

mentioning

confidence: 99%

Energy band bowing parameter in MgZnO alloys

Wang

Saito

Tanaka

et al. 2015

Applied Physics Letters

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We report on bandgap bowing parameters for wurtzite and cubic MgZnO alloys from a study of high quality and single phase films in all Mg content range. The Mg contents in the MgZnO films were accurately determined using the energy dispersive spectrometer and X-ray photoelectron spectroscopy (XPS). The measurement of bandgap energies by examining the onset of inelastic energy loss in core-level atomic spectra from XPS is proved to be valid for determining the bandgap of MgZnO films. The dependence of the energy bandgap on Mg content is found to deviate downwards from linearity. Fitting of the bandgap data resulted in two bowing parameters of 2.01 ± 0.04 eV and 1.48 ± 0.11 eV corresponding to wurtzite and cubic MgZnO films, respectively.

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“…It could also be observed that there were broad luminescence bands at long wavelength side which were closely related to the oxygen-related intrinsic defects and the Mg doping. [28][29][30] Fig. 1d and 1e showed the typical top-view and side-view scanning electron microscope (SEM) images of ZnMgO grown on Si substrate.…”

Section: Resultsmentioning

confidence: 99%

Near infrared electroluminescence of ZnMgO/InN core–shell nanorod heterostructures grown on Si substrate

Zheng

Gao

et al. 2016

Phys. Chem. Chem. Phys.

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This paper presents a systematic investigation of a ZnMgO/InN core-shell nanorods heterojunction device on a p-Si substrate. Here we demonstrated the heteroepitaxial growth of the well-aligned ZnMgO/InN core-shell nanorods structure, which enabled an increased heterojunction area to improve the carrier injection efficiency of nanodevices by plasma-assisted molecular beam epitaxy combined with metal-organic chemical vapor deposition. In situ X-ray photoelectron spectroscopy measurements were performed on the ZnMgO nanorods, the interface of ZnMgO/InN and the InN core-shell nanorods to fully understand the structure and working mechanism of the heterojunction device. The current transport mechanism has been discussed in terms of the characteristics of current-voltage and the energy band diagram of the n-InN/ZnMgO/p-Si heterojunction. At a low forward voltage, the current transport followed the dependence of I ∼ V(1.47), which was attributed to the deep-level assisted tunneling. When the forward voltage was larger than 10 V, the current followed the relation of I ∼ V(2) because of the radiative recombination process. In accordance with the above conclusion, the near-infrared electroluminescence of the diode could be observed after the forward bias voltage up to 11.6 V at room temperature. In addition, the size quantization effect and the intrinsic electron accumulation of the InN core-shell nanorods were investigated to explain the blueshift and broadened bandwidth. Furthermore, the light output power of about 0.6 microwatt at a fixed wavelength of 1500 nm indicated that our study will further provide a useful route for realizing the near-infrared electroluminescence of InN on Si substrate.

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Ultraviolet random lasing from asymmetrically contacted MgZnO metal-semiconductor-metal device

Cited by 12 publications

References 37 publications

Spontaneous Ga incorporation in ZnO nanowires epitaxially grown on GaN substrate

Spontaneous Ga incorporation in ZnO nanowires epitaxially grown on GaN substrate

Energy band bowing parameter in MgZnO alloys

Near infrared electroluminescence of ZnMgO/InN core–shell nanorod heterostructures grown on Si substrate

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