2022
DOI: 10.1002/adom.202201074
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Ultraviolet‐Sensitive OLED with Tunable Wavelength and Intensity by Integrated ZnO Nanowires Schottky Junction

Abstract: Organic light‐emitting diode (OLED) displays are one of the dominant flat panel display technologies. Here, a novel ultraviolet (UV)‐sensitive OLED (USO) is reported, which emits visible light with adjustable wavelength and brightness according to the intensity of the incident UV light. The USO employs zinc oxide nanowires (ZnO NWs) with Schottky junctions to control current and engages exciplex‐emitting OLED to emit light according to the incident UV light. As the UV light intensity increases from 0.09 to 8.1… Show more

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Cited by 12 publications
(2 citation statements)
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“…Poor ink quality can be a significant contributing factor to the clogging or breaking of a printer head. Additionally, current nozzles are limited to a minimum inner diameter of approximately 10 µm, constraining the resolution of printed 3D structures to physical dimensions which are also on the order of ten microns and therefore presenting an obstacle to the manufacturing of finer structures [30][31][32][33]. Although photocuring molding technology and micro-stereolithography can print complex structures with high molding accuracy, they are only applicable to photosensitive materials or photosensitive resin materials [34].…”
Section: Introductionmentioning
confidence: 99%
“…Poor ink quality can be a significant contributing factor to the clogging or breaking of a printer head. Additionally, current nozzles are limited to a minimum inner diameter of approximately 10 µm, constraining the resolution of printed 3D structures to physical dimensions which are also on the order of ten microns and therefore presenting an obstacle to the manufacturing of finer structures [30][31][32][33]. Although photocuring molding technology and micro-stereolithography can print complex structures with high molding accuracy, they are only applicable to photosensitive materials or photosensitive resin materials [34].…”
Section: Introductionmentioning
confidence: 99%
“…ZnO, with a direct band gap of approximately 3.37 eV, can effectively absorb UV light but not visible light; therefore, it is an ideal material for UV photoelectric devices 4 10 To date, various ZnO heterostructures for use as photodetectors have been constructed, such as p-Si nanowire/ZnO, 11 BeMgZnO/ZnO, 12 ZnOSnO2, 13 ZnO/graphene, 14 and Cu3(HHTP)2 c-MOF/ZnO heterostructures 15 . Ouyang et al.…”
Section: Introductionmentioning
confidence: 99%