1996
DOI: 10.1063/1.363793
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Unambiguous determination of crystal-lattice strains in epitaxially grown SiGe/Si multilayers

Abstract: A new method for unambiguous reconstruction of crystal-lattice strains in epitaxially grown layers from high-resolution x-ray diffraction data is proposed. The technique uses x-ray diffracted intensity profiles collected for two different radiation wavelengths. We enhance the theory for the previously developed algorithm for model-independent determination of crystal-lattice strain profiles in single crystals with epitaxially grown top-surface layers. The method relies on the retrieval of the scattered x-ray w… Show more

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Cited by 20 publications
(27 citation statements)
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“…The thickness and Ge concentration values studied in the present experiment are consistent with parameters pertaining in the manufacture of new-generation ultra-high frequency transistors (e.g. hetero-bipolar transistor with up to 160 GHz clock frequency [5]). The ability to readily acquire information, with atomic spatial resolution, on the fine structure of the near-surface and interface regions can be extremely useful for the precise control of the structural properties of artificially grown top-surface layered structures.…”
Section: Discussionsupporting
confidence: 85%
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“…The thickness and Ge concentration values studied in the present experiment are consistent with parameters pertaining in the manufacture of new-generation ultra-high frequency transistors (e.g. hetero-bipolar transistor with up to 160 GHz clock frequency [5]). The ability to readily acquire information, with atomic spatial resolution, on the fine structure of the near-surface and interface regions can be extremely useful for the precise control of the structural properties of artificially grown top-surface layered structures.…”
Section: Discussionsupporting
confidence: 85%
“…Thus, we can unambiguously determine the complete phase profile, jðQðEÞÞ, using the analytical formalism [4]. In fact, once the locations of the physical zeros of the CDA are determined, we can calculate the structure-factor profile from the data obtained using either one of the radiation energies [5]. The fundamental limit for the spatial resolution, Dz min , that can be achieved in the present technique, is Dz min !…”
Section: Theorymentioning
confidence: 98%
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“…The technique relies on the retrieval of the phase of a scattered X-ray wave from the experimentally measured one-dimensional intensity profile using a logarithmic dispersion relation [16,17]. Due to its one-dimensional nature, this method of X-ray phase retrieval is complicated by the difficulties presented by 'zero localization' [16], in which the 'true' zeros of the complex diffraction amplitude (CDA [14]), arising from interference suppression of the scattered waves, generally cannot be distinguished from the 'virtual' zeros arising from the numerical implementation of the mathematical formalism [18]. This uncertainty could result in non-unique solutions [19].…”
Section: Introductionmentioning
confidence: 99%