a promising candidate material for IR detection was used to construct different types of photoelectric devices, for example, bolometers, [2] photoconductors, [3][4][5] and p-n junction diode devices. [6][7][8][9][10] Owing to its outstanding properties, it shows a great potential for application in uncooled IR detection systems. [11] With its robust properties at a high temperature and strong illumination, [12] a CNT exhibits a better stability than HgCdTe or other IR materials, which also turns out to be compatible with the silicon complementary metal oxide semiconductor (CMOS) technology. Especially, CNTs have many remarkable intrinsic photonic and electric properties [13,14] that are suitable for photodetection. The absorption of a single-layer CNT is ≈2.3%, which is similar to that of graphene and larger than those of other 2D materials. As a result, CNT arrays can be used as a black body absorber. [15] A high efficiency of multiple electron-hole generation in CNT photodiodes was observed. [16] Electron and hole mobility were estimated to be greater than 100 000 cm 2 V −1 s −1 at room temperature, [17] which is considerably higher than those of traditional semiconductors, indicating ultrafast collection of generated carriers. The energy band structures of CNTs vary with the chiral vectors (n, m), and the bandgap is mainly inverse to the diameter of CNTs. [18] This indicates that CNT photodetectors with different types of chiral vectors can be used to detect broadband radiation from visible to far IR. [19] Therefore, CNTs have a remarkable potential to achieve room-temperature IR detection.For typical photodetection, a single CNT is not sufficient owing to the limited absorption area. Therefore, an aligned array of CNTs [20] or films [5] is preferred. However, normal CNT thin films with few layers also cannot absorb incident radiation efficiently because of the limited thickness, which results in a low quantum efficiency. For CNTs, quantum efficiency improvement becomes a major challenge in IR detection. Many researches were devoted to enhance the quantum efficiency, for example, compound system development, where CNTs were mixed with C60, [5] quantum dots, [21] or an organic material. [4] However, all these devices suffer from wavelength restriction for type II heterojunction. In this structure, because of the stability of quantum dots and other organic molecules and the limited diffusion length of excitons, the thickness of CNTs cannot be increased. [11] Moreover, exciton effects dominate the It is demonstrated that a plasmonic contact electrode can significantly enhance the performance of carbon nanotube (CNT) infrared (IR) detectors based on a barrier-free bipolar diode. The use of an axe-like plasmonic electrode suggests a considerably stronger field near the electrode with efficient collection of carriers, simultaneously enabling an enhancement from 1400 to 2100 nm. Particularly, it shows an explicit photocurrent enhancement where the polarization of incident light is perpendicular to a CNT. The best pho...