Underpotential Deposition of Sn on S-Covered Ag(111)

Innocenti, Massimo; Bencistà, Ilaria; Benedetto, Francesco Di; Cinotti, Serena; Luca, Antonio De; Bellandi, Silvano; Lavacchi, Alessandro; Miranda, Maurizio Muniz; Vizza, Francesco; Marinelli, Federica; Dei, Luigi; Carretti, Emiliano; Zafferoni, Claudio; Foresti, Maria Luisa

doi:10.1149/05021.0001ecst

Cited by 5 publications

(11 citation statements)

References 17 publications

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“…Stripping analysis of the ternary sulfides yielded a large and well-defined peak centered at E = À0.22 V (Cu stripping), preceded by a broader peak at À0.43 V (Sn stripping). Charges involved in the stripping of both metals (Sn + Cu) and S allowed defining the effective layer-by-layer formation of a ternary compound with a slope of 42 μCc m À2 , which is very close to the value obtained from the stripping of the binary CuS compound [19]. The chemical composition of Ag/S[(Cu/S) k /(Sn/S) j ] n deposits were analyzed by means of SEM, XPS and TOF-SIMS [37]; the ex-situ characterizations have highlighted the nominal stoichiometry is not respected leading to Sn/Cu ratio equal to 1/13 and 1/9 for j = 1, and 2, respectively.…”

Section: E-ald Of Ternary M X N 1-x Ssupporting

confidence: 56%

“…E-ALD technique has been successfully used to fabricate ultrathin films of metal sulfides on silver electrodes by alternating the underpotential deposition of metal and sulfur. These compounds include cadmium sulfide (CdS) [2,14,15], zinc sulfide (ZnS) [2], nickel sulfide (NiS) [4], lead sulfide (PbS) [16], copper sulfides (Cu x S) [17,18] and tin sulfides (Sn x S y ) [19]. A typical E-ALD cycle includes the underpotential deposition of sulfur followed by the surface limited reaction (SLR) of metal on S-covered Ag.…”

Section: E-ald Of Binary M X S Y Semiconductors On Ag(111)mentioning

confidence: 99%

“…The surface limited reaction of Sn x S y has been thoroughly studied by Innocenti et al [19] both on bare and on S-covered silver substrates. Electrodeposition of tin on bare silver showed two anodic peaks, E c1 = À0.70 V and E c2 = À0.48 V, the latter ascribed to the formation of Sn(IV) hydroxides.…”

Section: E-ald Of Cds Zns Sn X S Y and Cu X Smentioning

confidence: 99%

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E-ALD: Tailoring the Optoeletronic Properties of Metal Chalcogenides on Ag Single Crystals

Salvietti¹,

Giaccherini²,

Gambinossi³

et al. 2018

Semiconductors - Growth and Characterization

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Technological development in nanoelectronics and solar energy devices demands nanostructured surfaces with controlled geometries and composition. Electrochemical atomic layer deposition (E-ALD) is recognized as a valid alternative to vacuum and chemical bath depositions in terms of growth control, quality and performance of semiconducting systems, such as single 2D semiconductors and multilayered materials. This chapter is specific to the E-ALD of metal chalcogenides on Ag single crystals and highlights the electrochemistry for the layer-by-layer deposition of thin films through surface limited reactions (SLRs). Also discussed herein is the theoretical framework of the under potential deposition (UPD), whose thermodynamic treatment open questions to the correct interpretation of the experimental data. Careful design of the E-ALD process allows fine control over both thickness and composition of the deposited layers, thus tailoring the optoelectronic properties of semiconductor compounds. Specifically, the possibility to tune the band gap by varying either the number of deposition cycles or the growth sequence of ternary compounds paves the way toward the formation of advanced photovoltaic materials.

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Section: E-ald Of Ternary M X N 1-x Ssupporting

confidence: 56%

Section: E-ald Of Binary M X S Y Semiconductors On Ag(111)mentioning

confidence: 99%

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E-ALD: Tailoring the Optoeletronic Properties of Metal Chalcogenides on Ag Single Crystals

Salvietti¹,

Giaccherini²,

Gambinossi³

et al. 2018

Semiconductors - Growth and Characterization

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“…It is important to mention that A and B could also be a metal and a nonmetal; in these instances electrodeposition under potential control may form films of semiconductor compounds [53]; at a finer scale on the other hand, exploiting the E-ALD process it is, thus, possible to alternately deposit one element over the other to artificially synthesize semiconductors [48,54,55].…”

Section: Upd and Underpotential Co-depositionmentioning

confidence: 99%

Electroplating for Decorative Applications: Recent Trends in Research and Development

et al. 2018

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Electroplating processes are widely employed in industrial environments for a large variety of metallic coatings, ranging from technological to decorative applications. Even if the galvanic electrodeposition is certainly a mature technology, new concepts, novel applications, environmental legislation and the new material requirements for next-generation devices make the scientific research in this field still very active. This review focuses mostly at the decorative and wearable applications, and aims to create a bridge between the past knowledge and the future direction that this process, i.e., electrodeposition, is taking. Both the theoretical fundamentals as well as some of the most widespread practical applications-limited to metallic and alloy coatings-are explored. As an integral part of the industrial process, we take a look at the main techniques thought which the quality control of deposits and surfaces is carried out. Finally, global industrial performance and research directions towards sustainable solutions are highlighted.

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“…Such technology aims to enable the production of thin films with optimal characteristics for their use in solar cells, limiting the environmental impact. The electrochemical atomic layer deposition (E-ALD) method [3] is one of these techniques, allowing the growth of semiconductor thin films exploiting surface limited reactions (SLRs) [4][5][6][7]. One of the most common SLR in electrochemistry is the under potential deposition (UPD) [7,8].…”

Section: Introductionmentioning

confidence: 99%

Successes and Issues in the Growth of Moad and MoSe2 on Ag(111) by the E-ALD Method

Vizza

Giaccherini

Giurlani

et al. 2019

Metals

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This paper explores the conditions for the electrodeposition of Moad (molybdenum adlayer) on Ag(111) from alkaline aqueous solution. Moreover, the first stages of the growth of MoSe2 are also presented, performing the deposition of Sead on the deposited Moad. The deposition of Moad on Sead/Ag(111) was also explored. MoSe2 is of interest due to its peculiar optoelectronic properties, making it suitable for solar energy conversion and nanoelectronics. In this study, electrodeposition techniques were exploited for the synthesis process as more sustainable alternatives to vacuum based techniques. The electrochemical atomic layer deposition (E-ALD) method emerges as a suitable technique to grow inorganic semiconductor thin films thanks to its fulfillment of the green energy predicament and a strict structural and morphological control, and this approach has gathered the attention of the scientific community. Indeed, E-ALD exploits surface limited reactions (SLRs) to alternate the deposition of chemically different atomic layers constituting a compound semiconductor. Thus, E-ALD is one of the most promising electrodeposition techniques for the growth of thin-film of compound semiconductors under a strict structural and morphological control. On this ground, E-ALD can be considered an ideal technique for the growth of 2D materials.

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Underpotential Deposition of Sn on S-Covered Ag(111)

Cited by 5 publications

References 17 publications

E-ALD: Tailoring the Optoeletronic Properties of Metal Chalcogenides on Ag Single Crystals

E-ALD: Tailoring the Optoeletronic Properties of Metal Chalcogenides on Ag Single Crystals

Electroplating for Decorative Applications: Recent Trends in Research and Development

Successes and Issues in the Growth of Moad and MoSe2 on Ag(111) by the E-ALD Method

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