efficient/controllable photoexcited charge separation. [1,2] So far, the most commonly investigated SFPO is based on BiFeO 3 , [1,3] but its bandgap of ≈2.7 eV is not low enough to absorb the full spectrum of the visible light. The real potential of SFPO in photovoltaic applications significantly drives the exploring of new perovskite oxides with efficient visible light absorption. Recently, the realization of defect-driven-ferroelectricity and low bandgap states (even down to ≈1.1 eV) in perovskites (KNbO 3 ) 1−x (BaNi 1/2 Nb 1/2 O 3−δ ) x (KN-BNN) suggests that ferroelectricity and low bandgap can be simultaneously achieved by compositional modification. With two different transition-metal cations at the B-site in highly oxygen-vacancytolerable perovskite oxides, one cation (Nb 5+ ) provides off-center distortion and polarization, and the other (Ni 2+ ) decreases the difference in electronegativity within the perovskite BO bonds to create electronic states in the gap. The leaky conductivity associated with accommodation of Ni 2+ -oxygen vacancy combinations results in the loss of piezoelectricity especially at room temperature, which is generally the case for simple perovskite oxides. [4] Efforts have been taken to improve the tolerance of oxygen vacancies in order to keep the ferroelectricity, such as modifying the amount of BaNi 1/2 Nb 1/2 O 3−d (BNN) in the solid solution in order to decrease the concentration of oxygen vacancies, i.e., 0.98KN-0.02BNN, and 0.65PbTiO [5,6] or using more complex perovskite oxides with layered structure LaCoO 3 -mediated BiTiO 3 (E g = 2.65 eV). [7] However, an effective strategy to achieve an appropriate balance between the defect-induced low bandgap and defect-induced electrically leaky ferroelectricity is still currently lacking. Following the defect-engineered strategy, we present an efficient route to change the generally negative role of oxygen vacancies to be piezoelectrically/ferroelectrically friendly. Guided by the point-defect mediated large piezoelectricity in ferroelectric crystals, [8] defect-dipoles formed by dopant-oxygen vacancy pairs are preferentially coupled with the strong spontaneous polarization from host according to general symmetry-conforming property of point defects. [9][10][11] Moreover, both experiments and theoretical calculations provide strong evidence that the dopant-oxygen obtain low bandgap (i.e., 1.1-3.8 eV), the electrically leaky perovskite oxides generally lose piezoelectricity mainly due to oxygen vacancies. Therefore, the development of highly piezoelectric ferroelectric semiconductor remains challenging. Here, inspired by point-defect-mediated large piezoelectricity in ferroelectrics especially at the morphotropic phase boundary (MPB) region, an efficient strategy is proposed by judiciously introducing the gap states at the MPB where defect-induced local polar heterogeneities are thermodynamically coupled with the host polarization to simultaneously achieve high piezoelectricity and low bandgap. A concrete example, Ni 2+ -mediated (1...