Understanding Electrical Conduction States in WO3 Thin Films Applied for Resistive Random-Access Memory

Ta, Thi Kieu Hanh; Pham, Khoa Dang; Dao, Thi Bang Tam; Tran, Dai Lam; Phan, Bach Thang

doi:10.1007/s11664-016-4361-4

Cited by 3 publications

(1 citation statement)

References 23 publications

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“…Many publications have reported on the switching materials of Ó 2017 The Minerals, Metals & Materials Society binary oxides (SiO 2 , NiO, TiO 2 , CuO x , HfO 2 , ZrO x , ZnO, Nb 2 O 5 , Al 2 O 3 , WO x ). [7][8][9][10][11][12][13][14][15][16][17][18][19][20][21][22] In spite of the fact that little has been reported on memristor biosensors, memristive characteristics can be hired for biosensing. [2][3][4][5] The sensor transducer principle for memristive biosensor can be described as follows: the surface-functionalized memristor shows different positions of the current minima for voltage increasing (forward) and decreasing (backward) regimes, unlike the bare nanomaterials (nanowires) that show small voltage gap values in the hysteresis loops.…”

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confidence: 99%

Surface Functionalization of WO3 Thin Films with (3-Aminopropyl)triethoxysilane and Succinic Anhydride

Tran

et al. 2017

Journal of Elec Materi

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We report effects of oxygen plasma treatment on the surface functionalization of WO 3 thin films with (3-aminopropyl)triethoxysilane (APTES) and succinic anhydride (SA). X-ray diffraction and x-ray photoelectron spectroscopy results indicate the existence of the WO 3 phase. Fourier transform infrared spectroscopy measurement shows clear bands at 1040 cm À1 (Si-O-Si), 1556 cm À1 (N-H), 1655 cm À1 (C=O), 2937 cm À1 (C-H) and 3298 cm À1 (N-H), confirming the surface functionalization efficiency enhanced by prior treatment of oxygen plasma. It thus follows that the prior oxygen plasma treatment activates hydroxylation with more -OH groups on the WO 3 surface, which can pave a highly efficient way to the surface functionalization by APTES and SA.

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Section: Introductionmentioning

confidence: 99%

Surface Functionalization of WO3 Thin Films with (3-Aminopropyl)triethoxysilane and Succinic Anhydride

Tran

et al. 2017

Journal of Elec Materi

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Effect of Annealing on Resistive Switching Properties of Glancing Angle Deposition‐Assisted WO₃ Thin Films

Lamichhane,

Sharma,

Tomar

et al. 2023

Physica Status Solidi (a)

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Present work reports the impact of post deposition annealing on the resistive switching behavior of rf magnetron sputtered WO3 nanostructured thin films. The films were deposited under GLAD configuration of sputtering at varying GLAD angle from 65o to 80o. Structure transition from monoclinic to orthorhombic phase in deposited WO3 films was perceived after ex‐situ annealing at a temperature of 400 oC. Resistive Switching properties show a shift from bipolar to unipolar switching on post deposition annealing. The WO3 nanostructured thin films show the unipolar switching behavior after ex‐situ annealing for all the prepared samples. The value of resistance in high resistance state (HRS) was lowered after ex‐situ heating treatment and interestingly the switching voltage also reduced to 3V from 7V after annealing treatment. The ratio of high to low resistance state for annealed WO3 film fabricated at 70o GLAD angle was achieved to be maximum ( ̴ 219). A detailed charge transport mechanism shows that the ohmic behavior is the dominant current conduction mechanism at lower applied voltage while SCLC and Child’s law are dominant at higher applied voltages. The obtained results encourages the utilization of prepared WO3 thin film samples towards a wide variety of applications in optoelectronics, microelectronics, selective catalytic and environmental engineering along with the advanced electronics such as the resistive memory devices.This article is protected by copyright. All rights reserved.

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Multiphysics Computation for Resistive Random Access Memories With Different Metal Oxides

Chen

Wang

et al. 2022

IEEE Trans. Electron Devices

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Understanding Electrical Conduction States in WO3 Thin Films Applied for Resistive Random-Access Memory

Cited by 3 publications

References 23 publications

Surface Functionalization of WO3 Thin Films with (3-Aminopropyl)triethoxysilane and Succinic Anhydride

Surface Functionalization of WO3 Thin Films with (3-Aminopropyl)triethoxysilane and Succinic Anhydride

Effect of Annealing on Resistive Switching Properties of Glancing Angle Deposition‐Assisted WO₃ Thin Films

Multiphysics Computation for Resistive Random Access Memories With Different Metal Oxides

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Understanding Electrical Conduction States in WO3 Thin Films Applied for Resistive Random-Access Memory

Cited by 3 publications

References 23 publications

Surface Functionalization of WO3 Thin Films with (3-Aminopropyl)triethoxysilane and Succinic Anhydride

Surface Functionalization of WO3 Thin Films with (3-Aminopropyl)triethoxysilane and Succinic Anhydride

Effect of Annealing on Resistive Switching Properties of Glancing Angle Deposition‐Assisted WO3 Thin Films

Multiphysics Computation for Resistive Random Access Memories With Different Metal Oxides

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Effect of Annealing on Resistive Switching Properties of Glancing Angle Deposition‐Assisted WO₃ Thin Films