Understanding Ge impact on VT and VFB in Si1−xGex/Si pMOSFETs

Parameters extraction in SiGe/Si pMOSFETs using split CV technique

“…Match is obtained for pure Si whereas an additional lS0mV shift is needed to reproduce the experimental VT and VFB parameters of the Sio7Geo 3 pMOS. This discrepancy is close to the shift obtained in [7] using conventional VFB extraction technique (see [7] for more details. ), proving the validity of the split CV extraction technique.…”

“…7Geo . iSi pMOS is found in good agreement with the VT obtained by the extraction method explained in [7]. The VT@40% of C m a…”

TCAD modeling challenges for 14nm FullyDepleted SOI technology performance assessment

“…The meaningful results provided by the first-principle Ab-initio calculations reported in [7] complement well the cSiGe WF k.p calculations of [6] that account for quantization effects with Vg and Tsi. In-line characterization techniques based on x-ray diffraction (XRD) combined with TCAD simulations are currently in development to determine the WF.…”

(Invited) In Depth Study of Ge Impact on Advanced SiGe PMOS Transistors

“…Adjustment of EOT and metal work function (WF eff ) of simulated structure is done to fit experiment, enabling a reliable extraction of EOT, VT and flat band voltage (VFB) (Fig.2b). VFB corresponds to the gate bias at zero substrate charge and VT is estimated from 40% of C max,inv [6]. EOT has been measured for the three different pMOS.…”