Understanding phase evolution of ferroelectric Hf0.5Zr0.5O2 thin films with Al2O3 and Y2O3 inserted layers

Shin, Jonghoon; Seo, Haengha; Ye, Kun Hee; Jang, Yoon Ho; Kwon, Dae Seon; Lim, Junil; Kim, Tae Kyun; Paik, Heewon; Song, Haewon; Kim, Ha Ni; Byun, Seungyong; Shin, Seong Jae; Kim, Kyung Do; Lee, Yong Bin; Lee, In Soo; Choi, Jung-Hae; Hwang, Cheol Seong

doi:10.1039/d4tc00061g

J. Mater. Chem. C

2024

DOI: 10.1039/d4tc00061g

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Understanding phase evolution of ferroelectric Hf_0.5Zr_0.5O₂ thin films with Al₂O₃ and Y₂O₃ inserted layers

Jonghoon Shin,

Haengha Seo,

Kun Hee Ye

et al.

Abstract: This study investigates the insertion traits of the Al2O3 and Y2O3 insertion layers (ILs) and their effects on the phase evolution and electrical characteristics of polycrystalline Hf0.5Zr0.5O2 (HZO) thin films grown by atomic layer deposition (ALD).

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Cited by 4 publications

References 52 publications

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Improvement of leakage and fatigue properties of Hf0.5Zr0.5O2 thin film by embedding ultra-thin Al2O3 interlayer

Wang,

Lu,

Wang

et al. 2024

J Mater Sci

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Improvement of leakage and fatigue properties of Hf0.5Zr0.5O2 thin film by embedding ultra-thin Al2O3 interlayer

Wang,

Lu,

Wang

et al. 2024

J Mater Sci

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Impact of Tetrakis(ethylmethylamino)-based precursor and oxygen source selection on atomic layer deposition of ferroelectric HfxZr1-xO2 thin films

Kim,

Song,

Narayan

et al. 2025

Applied Surface Science

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Reversible modulation of critical electric fields for a field-induced ferroelectric effect with field-cycling in ZrO₂ thin films

Shin,

Do Kim

et al. 2024

J. Mater. Chem. C

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Understanding phase evolution of ferroelectric Hf_0.5Zr_0.5O₂ thin films with Al₂O₃ and Y₂O₃ inserted layers

Abstract: This study investigates the insertion traits of the Al2O3 and Y2O3 insertion layers (ILs) and their effects on the phase evolution and electrical characteristics of polycrystalline Hf0.5Zr0.5O2 (HZO) thin films grown by atomic layer deposition (ALD).

Cited by 4 publications

References 52 publications

Improvement of leakage and fatigue properties of Hf0.5Zr0.5O2 thin film by embedding ultra-thin Al2O3 interlayer

Improvement of leakage and fatigue properties of Hf0.5Zr0.5O2 thin film by embedding ultra-thin Al2O3 interlayer

Impact of Tetrakis(ethylmethylamino)-based precursor and oxygen source selection on atomic layer deposition of ferroelectric HfxZr1-xO2 thin films

Reversible modulation of critical electric fields for a field-induced ferroelectric effect with field-cycling in ZrO₂ thin films

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Understanding phase evolution of ferroelectric Hf0.5Zr0.5O2 thin films with Al2O3 and Y2O3 inserted layers

Abstract: This study investigates the insertion traits of the Al2O3 and Y2O3 insertion layers (ILs) and their effects on the phase evolution and electrical characteristics of polycrystalline Hf0.5Zr0.5O2 (HZO) thin films grown by atomic layer deposition (ALD).

Cited by 4 publications

References 52 publications

Improvement of leakage and fatigue properties of Hf0.5Zr0.5O2 thin film by embedding ultra-thin Al2O3 interlayer

Improvement of leakage and fatigue properties of Hf0.5Zr0.5O2 thin film by embedding ultra-thin Al2O3 interlayer

Impact of Tetrakis(ethylmethylamino)-based precursor and oxygen source selection on atomic layer deposition of ferroelectric HfxZr1-xO2 thin films

Reversible modulation of critical electric fields for a field-induced ferroelectric effect with field-cycling in ZrO2 thin films

Contact Info

Product

Resources

About

Understanding phase evolution of ferroelectric Hf_0.5Zr_0.5O₂ thin films with Al₂O₃ and Y₂O₃ inserted layers

Reversible modulation of critical electric fields for a field-induced ferroelectric effect with field-cycling in ZrO₂ thin films