Understanding the base development mechanism of hydrogen silsesquioxane

Kim, Jihoon; Chao, Weilun; Griedel, Brian D.; Liang, Xiaogan; Lewis, M.; Hilken, Dawn; Olynick, Deirdre L.

doi:10.1116/1.3250261

Cited by 22 publications

(17 citation statements)

References 19 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…16 However the dose required is extremely poor (5000 pC cm À1 line dose at 10 keV; 16 area dose of 2500-3000 mC cm À2 at 100 keV). 17 Likewise, calixarene,…”

mentioning

confidence: 99%

Chemically amplified phenolic fullerene electron beam resist

et al. 2014

View full text Add to dashboard Cite

Molecular resist materials for electron beam lithography have received significant interest as a route to reducing line width roughness and improving resolution. However, they have often required the use of hazardous solvents in their processing. A new family of fullerene based negative tone chemically amplified e-beam resists, using industry compatible solvents, has been developed. A sensitivity of $40 mC cm À2 was achieved at 20 keV. Isolated features with a line width of 13.6 nm as well as $20 nm lines on a 36 nm pitch have been patterned, whilst one variant has demonstrated resolution to 15 nm halfpitch at slightly higher dose.

show abstract

“…16 However the dose required is extremely poor (5000 pC cm À1 line dose at 10 keV; 16 area dose of 2500-3000 mC cm À2 at 100 keV). 17 Likewise, calixarene,…”

mentioning

confidence: 99%

Chemically amplified phenolic fullerene electron beam resist

et al. 2014

View full text Add to dashboard Cite

show abstract

“…As previously proposed by Kim et al [11], the HSQ development reaction in basic saline solution might be expressed by ≡Si-H + NaOH → ≡Si-O -+ Na + + H 2 .…”

Section: Discussionmentioning

confidence: 96%

“…This weakening increases the probability of partially cross-linked HSQ structures breaking up into smaller pieces. These pieces then can dissolve into solution more rapidly and so they develop faster [11].…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Electrochemical development of hydrogen silsesquioxane by applying an electrical potential

et al. 2011

View full text Add to dashboard Cite

We present a new method for developing hydrogen silsesquioxane (HSQ) by using electrical potentials and deionized water. Nested-L test structures with a pitch as small as 9 nm were developed using this electrochemical technique in saline solution without adding hydroxyl ions. Furthermore, we showed that high-resolution structures can be electrochemically developed in deionized water alone. Electrochemical development is controlled by the applied voltage and may overcome several of the limitations discussed for alkaline developers, such as poor hydroxyl anion diffusion and charge repulsion effects in small trenches.

show abstract

“…4 Moreover, salt was shown to reduce the self-limiting nature of the HSQ development process. 5,6 Additional research has shown improvements in achievable resolution using hot development, 7 a two-step method involving an HF dip, 8 and alternate developer chemistries. 9 It was hypothesized that the enhancement associated with adding salt to developer could be due to an increase in development rate caused by surface charge screening.…”

Section: Introductionmentioning

confidence: 99%

In situ study of hydrogen silsesquioxane dissolution rate in salty and electrochemical developers

Harry¹,

Strobel²,

Yang³

et al. 2011

Journal of Vacuum Science & Technology B, Nanotechnology an

View full text Add to dashboard Cite

In order to better characterize the development of the electron-beam resist hydrogen silsesquioxane (HSQ), we used a quartz crystal microbalance (QCM) to study its rate of dissolution in situ. We determined the effect of both salt concentration and applied electric potential on the development rate of HSQ. The development rates were measured by spinning HSQ directly onto a quartz crystal resonator, and then developing in a QCM microfluidic module. In order to more directly observe the effect of electric potentials on HSQ development rate, a film of HSQ was partially cross-linked in an O 2 plasma asher then developed in the QCM flow module with a salt-free NaOH solution. As the partially cross-linked HSQ slowly developed, electric potentials were applied and removed from the Preprint: manuscript under review 2 crystal allowing us to observe how the development rate increased upon the application of a positive electric potential. The increased development rate caused by both the addition of salt ions and a positive electric potential suggests that the rate may be limited by a build-up of negative charge on the HSQ.

show abstract

Understanding the base development mechanism of hydrogen silsesquioxane

Cited by 22 publications

References 19 publications

Chemically amplified phenolic fullerene electron beam resist

Chemically amplified phenolic fullerene electron beam resist

Electrochemical development of hydrogen silsesquioxane by applying an electrical potential

In situ study of hydrogen silsesquioxane dissolution rate in salty and electrochemical developers

Contact Info

Product

Resources

About