“…Recently, the creation of MWIR nBn structures based on MBE HgCdTe with Al 2 O 3 passivation was reported, for which a diffusion-limited dark current was observed in the temperature range 180-300 K [19,20]. The optimization of the parameters of nBn structures is impossible without a detailed study of the processes in multilayer unipolar structures based on HgCdTe MBE Thus, measurements of admittance revealed a number of differences between nBn structures based on MBE HgCdTe [21,22] and structures based on III-V [23][24][25], which, for example, consist in hightemperature distortions due to surface states at heterointerfaces. Additional information may be provided by studies of the electrical characteristics of metal-insulator-semiconductor (MIS) structures created by depositing a dielectric on top of an nBn structure.…”