2019
DOI: 10.1109/jeds.2019.2913157
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Understanding the $C-V$ Characteristics of InAsSb-Based nBn Infrared Detectors With N- and P-Type Barrier Layers Through Numerical Modeling

Abstract: Capacitance-voltage (C-V) profiling is a useful technique for accurate and non-destructive determination of carrier concentrations in semiconductor materials. Recently, this measurement has been applied to the infrared barrier detector to determine the doping densities of the absorber and contact layers. This paper provides three contributions to the development of barrier detectors. First, we develop a physics-based semi-analytical model for computing the C-V characteristics derived from metal-oxidesemiconduc… Show more

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Cited by 12 publications
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“…Recently, the creation of MWIR nBn structures based on MBE HgCdTe with Al 2 O 3 passivation was reported, for which a diffusion-limited dark current was observed in the temperature range 180-300 K [19,20]. The optimization of the parameters of nBn structures is impossible without a detailed study of the processes in multilayer unipolar structures based on HgCdTe MBE Thus, measurements of admittance revealed a number of differences between nBn structures based on MBE HgCdTe [21,22] and structures based on III-V [23][24][25], which, for example, consist in hightemperature distortions due to surface states at heterointerfaces. Additional information may be provided by studies of the electrical characteristics of metal-insulator-semiconductor (MIS) structures created by depositing a dielectric on top of an nBn structure.…”
Section: Introductionmentioning
confidence: 99%
“…Recently, the creation of MWIR nBn structures based on MBE HgCdTe with Al 2 O 3 passivation was reported, for which a diffusion-limited dark current was observed in the temperature range 180-300 K [19,20]. The optimization of the parameters of nBn structures is impossible without a detailed study of the processes in multilayer unipolar structures based on HgCdTe MBE Thus, measurements of admittance revealed a number of differences between nBn structures based on MBE HgCdTe [21,22] and structures based on III-V [23][24][25], which, for example, consist in hightemperature distortions due to surface states at heterointerfaces. Additional information may be provided by studies of the electrical characteristics of metal-insulator-semiconductor (MIS) structures created by depositing a dielectric on top of an nBn structure.…”
Section: Introductionmentioning
confidence: 99%