2016
DOI: 10.1039/c6cp03680e
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Understanding the fundamental electrical and photoelectrochemical behavior of a hematite photoanode

Abstract: Hematite is considered to be the most promising material used as a photoanode for water splitting and here we utilized a sintered hematite photoanode to address the fundamental electrical, electrochemical and photoelectrochemical behavior of this semiconductor oxide. The results presented here allowed us to conclude that the addition of Sn(4+) decreases the grain boundary resistance of the hematite polycrystalline electrode. Heat treatment in a nitrogen (N2) atmosphere also contributes to a decrease of the gra… Show more

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Cited by 27 publications
(18 citation statements)
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“…It is well known that under certain thermal and contaminant loading conditions, the electronic blocking effect associated with the solid–solid interface (grain boundary, GB) can be lowered . For instance, the addition of Sn to polycrystalline hematite has been shown to decrease grain boundary resistance . Hematite has also been modified by adding various other dopants (transition metals and nontransition metals).…”
Section: Introductionmentioning
confidence: 99%
See 3 more Smart Citations
“…It is well known that under certain thermal and contaminant loading conditions, the electronic blocking effect associated with the solid–solid interface (grain boundary, GB) can be lowered . For instance, the addition of Sn to polycrystalline hematite has been shown to decrease grain boundary resistance . Hematite has also been modified by adding various other dopants (transition metals and nontransition metals).…”
Section: Introductionmentioning
confidence: 99%
“…. Among the nontransition metal dopants, Sn has been widely used to modify the electronic conductivity of hematite . Recently, Sn‐doping has also been used to suppress the surface defect states of hematite and enhance the electronic properties .…”
Section: Introductionmentioning
confidence: 99%
See 2 more Smart Citations
“…In the case of PEC cells using an n-type semiconductor as a photoanode, after sunlight absorption a pair of electron-holes is generated and separated by the space-charge layer. The ideal scenario is represented by the schematic diagram in Figure 1c, which shows four fundamental steps: (1) light absorption, (2) charge separation, (3) charge injection to the back contact (for reducing water at the cathode surface), and (4) hole diffusion to the electrode-electrolyte interface to oxidize water (Sivula 2013, Zandi and Hamann 2015, Soares et al 2016. In summary, the minority carriers (holes, h + ) are injected into the SCLJ interface to promote the water oxidation reaction (OER) and release the O 2 molecule.…”
Section: Pec-semiconductor Based Operation and Requirementsmentioning
confidence: 99%