Understanding the growth of p-doped 4H-SiC layers using vapour–liquid–solid transport

Vo-Ha, Arthur; Carole, Davy; Lazar, Mihai; Tournier, Dominique; Cauwet, François; Soulière, Véronique; Thierry-Jebali, Nicolas; Brosselard, Pierre; Planson, Dominique; Brylinski, Christian; Ferro, Gabriel

doi:10.1016/j.tsf.2013.09.030

Cited by 5 publications

(4 citation statements)

References 12 publications

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“…Such high doping level is still difficult to reach by ion implantation without significant degradation of the crystal quality. Furthermore, in a recent work , VLS localized epitaxial deposit was characterized by Raman analyzes, which have confirmed that the layers are homoepitaxial, and that Al from the melt is incorporated at high doping density inside the SiC lattice. No evidence of any inclusion of any Al‐based compound, such as Al 2 SiC 4 for example, was found.…”

Section: Introductionmentioning

confidence: 66%

Further optimization of VLS localized epitaxy for deeper 4H-SiC p-n junctions

Sejil

Lazar

Carole

et al. 2017

Phys. Status Solidi A

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This paper deals with localized epitaxy of highly p-doped 4H-SiC, based on VLS transport, and intended to be used both for the emitter of PN or PiN devices, and for the peripheral protection of power devices. The goal was to fill-in 1 mm-deep wells, plasma etched, into n-type epilayers. We have previously shown that true p-n junctions with low leakage currents can be achieved using this alternative technique without any post-growth annealing at high temperatures. We report here for the first time, the filling of etched wells up to 900 nm with p þþ SiC, presenting a regular and uniform surface morphology. In this work, we also present correlations between the physical analyses of our SiC VLS epitaxy, and the electrical characterizations performed on p/n diodes with VLS grown, locally p-type doped emitter.

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Section: Introductionmentioning

confidence: 66%

Further optimization of VLS localized epitaxy for deeper 4H-SiC p-n junctions

Sejil

Lazar

Carole

et al. 2017

Phys. Status Solidi A

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“…Some of the present authors have already demonstrated the localized homoepitaxy of p‐doped 4H‐SiC layers using vapor–liquid–solid (VLS) transport and an unmasked set‐up . The basic concept was to create local amounts of Al–Si liquid by melting a pattern made of Si and Al layers stacking.…”

Section: Introductionmentioning

confidence: 99%

Highly Mg-doped GaN dots and films grown by VLS transport at low temperature

Jaud

Auvray

Kahouli

et al. 2016

Phys. Status Solidi A

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In this study, a new approach toward localized p‐type doping of GaN was explored by implementing vapor–liquid–solid (VLS) transport for both reducing the growth temperature and reaching very high Mg incorporation levels. The starting seeds are GaN(0001) epilayers grown on Si(111). The growth cycle includes three steps. At first, Ga is deposited by MOCVD onto the GaN surface, resulting in a network of Ga droplets with sub‐micrometer diameters. Then, Mg is incorporated into the droplets, from the gas phase, using (MeCP)2Mg precursor. Finally, droplets are nitridated at 600–700 °C in flowing NH3. Performing one complete growth cycle leads to a network of well‐separated dots and/or ring‐shaped GaN features. It is demonstrated that the Mg content in the droplets drastically influences the GaN growth mode. Increasing Mg incorporation promotes growth at the liquid/solid interface versus growth at the triple line. To improve the seed coverage, several successive cycles have been performed leading to GaN films with thickness up to ∼250 nm. SIMS analyses demonstrate the very high incorporation of Mg in the VLS‐grown material, with concentrations from 3 × 1019 to 8 × 1021 cm−3. Nevertheless, pronounced O incorporation (a few 1020 cm−3) is also found.

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“…In fact, the minimum thickness of a liquid flux layer is, at most, 2-3 μm for high-quality and uniform SiC thin films in the CVD-based VLS process. 16 In this study, we demonstrate that a thin Si-Ni alloy layer can work effectively as a flux to produce a uniform SiC film. The key point is the simultaneous supply of pure Si and C sources from the gas phase by PLD using a SiC stoichiometric target, stabilizing the flux during the process.…”

Section: Introductionmentioning

confidence: 71%