“…GaAs is one of the oldest and most studied semiconductor materials applicable to water splitting , and to other light-harvesting devices, , thanks to its suitable band gap of 1.4 eV and good alignment of the valence and conduction band edges with the water-splitting reaction potentials. They have been shown to achieve high efficiencies in water splitting while retaining relatively simple structure − and, on occasion, also high stability. , In order to accurately estimate the overpotentials, knowledge of the potential of the valence and conduction band edges with respect to the reaction potentials is crucial. , Both experimental and theoretical investigations are extensively available in the literature, ,, and a significant amount of work exists concerning modeling the carrier dynamics and the current–voltage response in photoelectrochemical cells, in general, utilizing a variety of different approaches. ,,,− Recently, also simulating electrochemical impedance spectroscopy (EIS) or Mott–Schottky response of the cell has gained some attraction, but these are so far limited to analytic models. , …”