2022
DOI: 10.1021/acssensors.1c02753
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Understanding the Increasing Trend of Sensor Signal with Decreasing Oxygen Partial Pressure by a Sensing-Reaction Model Based on O2– Species

Abstract: Although the increasing trend of sensor signal with decreasing oxygen partial pressure was observed quite early, the underlying mechanism is still elusive, which is a hindrance to accurate gas detection under varying oxygen partial pressure. In this work, a sensing model based on previous experimental and theoretical results is proposed, in which the O2– species is determined to be the main oxygen species because O– species has not been observed by direct spectroscopic studies. On this basis, combined with the… Show more

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Cited by 12 publications
(18 citation statements)
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“…A conductivity model based on vacancy healing and formation was recently proposed for SnO 2 -based CGS by Sun and Lu, which allowed them to model the conduction electron concentration and sensor response in both the ‘electron depletion’ and ‘electron accumulation’ regime depending on the density of near-surface vacancies relative to the bulk value. 29 Our direct in situ spectroscopic evidence of the correlation between near-surface vacancy density and sensor's resistance and band bending fully supports such a mechanism.…”
Section: Resultssupporting
confidence: 54%
“…A conductivity model based on vacancy healing and formation was recently proposed for SnO 2 -based CGS by Sun and Lu, which allowed them to model the conduction electron concentration and sensor response in both the ‘electron depletion’ and ‘electron accumulation’ regime depending on the density of near-surface vacancies relative to the bulk value. 29 Our direct in situ spectroscopic evidence of the correlation between near-surface vacancy density and sensor's resistance and band bending fully supports such a mechanism.…”
Section: Resultssupporting
confidence: 54%
“…So, applying the mass action law, the rate for this reaction is proportional to the CO pressure and the oxygen density at the surface. Thus, the rate equation for O o is different than that found in ref . Indeed, by using eqs and , we can write normald [ O o ] normald t = k normala normald normals false[ V o 2+ false] 2 n normals 4 p normalO 2 k normald normale normals false[ normalO normalo false] 2 k normalr normale normala normalc normalt p normalC normalO [ O o ] …”
mentioning
confidence: 99%
“…Relevant surface reactions to sensing have been summarized in ref for single charged vacancies. Accordingly, for the oxygen-vacancy model and the notation of ref , the oxygen adsorption–desorption process for doubly charge vacancies, can be written as normalO 2 ( g ) + 4 normale + 2 V o 2 + 2 normalO normalo where V o 2 + accounts for doubly ionized vacancies and O o for lattice oxygen. Equation indicates that as oxygen pressure decreases the density of vacancies increases.…”
mentioning
confidence: 99%
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