Understanding the influence of tellurium oxide in front Ag paste for contacting silicon solar cells with homogeneous high sheet resistance emitter

Ebong, Abasifreke; Bezawada, Nirupama; Batchu, Kartheek

doi:10.7567/jjap.56.08mb07

Cited by 10 publications

(2 citation statements)

References 28 publications

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“…Ag paste has been recently improved by replacing the conventional PbO-based glass frits with TeO 2 -based ones, thereby facilitating the fabrication of high-quality ohmic contacts with the Pdoped Si emitter with an R sh value of $100 Ω/sq. 27,28 Nevertheless, commercially available Ag pastes still yield poor contact quality when the R sh of the P-doped Si emitter is >130 Ω/sq. Al-containing Ag (Ag/Al) pastes are commonly employed for contacting B-doped Si emitters.…”

Section: Introductionmentioning

confidence: 99%

“…The continuous demand for enhanced conversion efficiency requires the adoption of lightly doped n + ‐Si emitters with sheet resistance ( R sh ) of >100 Ω/sq or B‐doped p + ‐Si emitters, which was previously hampered by the high contact resistance of screen‐printed Ag metallization. Ag paste has been recently improved by replacing the conventional PbO‐based glass frits with TeO 2 ‐based ones, thereby facilitating the fabrication of high‐quality ohmic contacts with the P‐doped Si emitter with an R sh value of ~100 Ω/sq 27,28 . Nevertheless, commercially available Ag pastes still yield poor contact quality when the R sh of the P‐doped Si emitter is >130 Ω/sq.…”

Section: Introductionmentioning

confidence: 99%

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Attenuation of short‐circuit effect along screen‐printed silver gridlines during the contact firing process of crystalline silicon solar cells

Kim

Cho

et al. 2022

Progress in Photovoltaics

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The "short-circuit effect" in the fire-through Ag metallization of crystalline Si (c-Si) solar cells refers to the poor contact formation caused by an electrical short between the Ag gridline and underlying Si emitter during contact firing. This study employs two different Ag pastes containing PbO-and TeO 2 -based glass frits to investigate the dependence of the short-circuit effect on the length and pattern of the Ag finger lines. The results show that regardless of the employed glass frits, the short-circuit effect is mitigated even near the short spot and gradually attenuated along the finger line away from the spot as the Ag finger line extends radially longer than the critical length (>35 mm). We demonstrate that this attenuation is independent of the finger line width and predominantly attributed to the ohmic drop of the electrode potential along the Si substrate. The results also show that, regardless of the glass frits, the contact quality is strongly correlated with the density of the Ag crystallites that are formed on the Si emitter surface. The 6-in full-cell tests indicate that the isolation of the short spots by segmenting the Ag finger lines does not necessarily result in the mitigation of the short-circuit effect. We suggest that the reduction of Ag + on the Si emitter surface should be the key process that must be controlled to achieve highquality contacts during contact firing, providing further insights into the electrochemical characteristics of contact firing reactions for the future development of Ag pastes.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Attenuation of short‐circuit effect along screen‐printed silver gridlines during the contact firing process of crystalline silicon solar cells

Kim

Cho

et al. 2022

Progress in Photovoltaics

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Tellurium‐based screen‐printable conductor metallizations for crystalline silicon solar cells

Mikeska

Liao

2019

Progress in Photovoltaics

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Tellurium‐based screen‐printable conductor metallization pastes containing multiple inorganic solid‐state frits (ie, metallization pastes containing two or more individual discrete tellurium‐based frits) were evaluated on p‐type, mono‐crystalline silicon passivated emitter rear cell (PERC) wafers. Individual discrete frits with tellurium‐lead‐metal‐oxygen compositions of Tenormalx()Pby0.25emMz0.25emMnormalz''0.25emMnormalznormalii()1−normalxnormaln+On+2 were prepared with varying ratios of tellurium and lead cations. Screen‐printed solar cells fabricated from metallization pastes containing multiple discrete frits (two, three, and four discrete frits) had state‐of‐the‐art solar cell electrical properties (Eff = 21.1%). Mechanisms for the oxidation, dissolution, and removal of the SiNx:H antireflective coating (ARC) by tellurium‐based metallizations during solar cell firing are examined. In situ thermal analysis of a model frit‐silicon nitride system shows that frit glass transition temperatures coincide with the onset of silicon nitride oxidation during heating in accord with dissolution reactions. The advantage of multiple frit systems is an inherent ability to fine‐tune the final chemistry of the conductor metallization, beyond what is possible with single frit systems, to further improve solar cell performance, which is essential for advanced crystalline silicon solar cell devices and continued reductions in processing costs.

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Nano‐size Joule‐Heating to Achieve Low‐Ohmic Ag–Si Contact on Boron Emitters of n‐TOPCon Solar Cells

Zhou,

Li,

Zhang

et al. 2024

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Over the past decade, Tunnel Oxide Passivated Contact (TOPCon) solar cells have emerged as a leading technology for high‐efficiency silicon solar cells. Conventional metallization processes using silver/aluminum (Ag/Al) pastes encounter significant hurdles due to reliability risks and insufficient contact quality. Recent advancements in laser‐induced metallization technologies, particularly laser‐enhanced contact optimization (LECO), offer promising solutions. However, the mechanism of silver‐silicon (Ag–Si) contact formation on the P+ emitter of TOPCon cells via LECO processing remains incompletely understood. This study designs and prepares two types of glass frits (GF‐A and GF‐B) for TOPCon cells and investigates the electrical properties of corresponding devices. Advanced techniques are employed to examine the Ag–Siinterfaces. The results demonstrate that GF‐A‐based TOPCon cells (Cell‐A) outperformed GF‐B‐based cells (Cell‐B) due to the construction of a current‐confined Ag–Si interface. A composite conductive model for the Ag–Si interfaces by LECO treatment is introduced, revealing the nano‐size Joule‐heating to achieve the Ag–Si eutectic structure as the underlying formation mechanism. This work contributes to the understanding of metal‐silicon contact optimization in solar cells and introduces novel methodologies for laser‐induced synthesis and micro‐nano interface engineering.

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Understanding the influence of tellurium oxide in front Ag paste for contacting silicon solar cells with homogeneous high sheet resistance emitter

Cited by 10 publications

References 28 publications

Attenuation of short‐circuit effect along screen‐printed silver gridlines during the contact firing process of crystalline silicon solar cells

Attenuation of short‐circuit effect along screen‐printed silver gridlines during the contact firing process of crystalline silicon solar cells

Tellurium‐based screen‐printable conductor metallizations for crystalline silicon solar cells

Nano‐size Joule‐Heating to Achieve Low‐Ohmic Ag–Si Contact on Boron Emitters of n‐TOPCon Solar Cells

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