2002
DOI: 10.1016/s0022-0248(01)02247-3
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Unexpected room temperature growth of silicon dioxide crystallites on passivated porous silicon

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Cited by 13 publications
(12 citation statements)
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“…3). The most impressive polygonization and grain growth was observed for annealing in NF 3 , which is known as an activator for crystallization processes [25]. The electrical properties as well as morphology became similar to those of the ''thick'' film (Fig.…”
Section: Resultsmentioning
confidence: 72%
“…3). The most impressive polygonization and grain growth was observed for annealing in NF 3 , which is known as an activator for crystallization processes [25]. The electrical properties as well as morphology became similar to those of the ''thick'' film (Fig.…”
Section: Resultsmentioning
confidence: 72%
“…Indeed, this structure is typical for p-type porous silicon (Fig. 1a), which provided enhanced nucleation and crystallization of proteins [12] and crystalline oxide growth [14,15]. In the extreme case of a vertical deep pore with large diameter (Fig.…”
Section: Models Of Enhanced Crystallization On Porous Siliconmentioning
confidence: 87%
“…have been grown on the same p-type porous silicon with 5-10 nm pore sizes fabricated by electrochemical etching [12]. Room-temperature crystallization of silicon dioxide in air on NF 3 treated p-type porous silicon [14,15]. No crystallization was observed on flat silicon surface as well as on p þ þ -type porous silicon at the same treatment conditions.…”
Section: Introductionmentioning
confidence: 99%
“…Recently, we found strong evidence of crystallization and nucleation enhancement of different materials on porous silicon produced by electrochemical method [5][6][7]. The enhanced nucleation was explained by porous silicon surface fractality (self-similarity) [8,9].…”
Section: Introductionmentioning
confidence: 94%