Uni-Traveling-Carrier Photodetector With High-Reflectivity DBR Mirrors

Chen, Qingtao; Huang, Yongqing; Zhang, Xiupu; Duan, Xiaofeng; Fei, Jiarui; Ma, Xiaokai; Liu, Tao; Wu, Gang; Liu, Kai; Ren, Xiaomin

doi:10.1109/lpt.2017.2712627

Cited by 12 publications

(8 citation statements)

References 22 publications

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“…Figure 20 shows PIN-PD and UTC-PDs integrated or quasi-integrated (BCB bonding) with two kinds of bottom mirrors [34,35,140,157,179] It can be seen from Figure 20a that the GaAs-based PIN-PD is integrated with 4 DBRs (three GaAs/AlGaAs DBRs and one Si/SiO2 DBRs) forming a four-mirror and three-cavity(M4C3) structure operating at Figure 20 shows PIN-PD and UTC-PDs integrated or quasi-integrated (BCB bonding) with two kinds of bottom mirrors [34,35,140,157,179] It can be seen from Figure 20a that the GaAs-based PIN-PD is integrated with 4 DBRs (three GaAs/AlGaAs DBRs and one Si/SiO 2 DBRs) forming a four-mirror and three-cavity(M4C3) structure operating at 1550 nm [157]. The fabricated M4C3 structure achieves 70% peak quantum efficiency, 36 GHz 3-dB bandwidth, and quite a narrow spectrum linewidth (full-width at halfmaximum (FWHM)) of 0.75 nm which is well-suited to high-density wavelength division multiplexing (WDM) communication systems [155].…”

Section: High-reflected Mirrors For Photodiodesmentioning

confidence: 99%

“…Furthermore, the optical-to-electrical (O/E) conversion efficiency and heat dissipation at a high bias voltage also needs to be considered. We could use resonant cavity enhanced (RCE) structure [33] employing distributed Bragg reflector (DBR) [34], subwavelength grating (SWG) mirrors [35] as bottom reflectors and dielectric layers as top reflectors to increase O/E conversion efficiency, while using high conductivity AlN [36,37], diamond [38] or SiC [39] substrates to reduce heat dissipation. Moreover, the slow light effect resulting from Bragg grating structures [40,41] with a remarkably low group velocity might offer a possible and promising solution to successfully compress optical signals and enhance light-matter interactions, and the enhanced O/E conversion efficiency in PDs could be possible while the joule heat problem at a higher bias voltage, device footprint reduction, and low power consumption could also be solved in the future.…”

Section: Introductionmentioning

confidence: 99%

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Advances in High–Speed, High–Power Photodiodes: From Fundamentals to Applications

Chen,

Zhang,

Sharawi

et al. 2024

Applied Sciences

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High–speed, high–power photodiodes play a key role in wireless communication systems for the generation of millimeter wave (MMW) and terahertz (THz) waves based on photonics–based techniques. Uni–traveling–photodiode (UTC–PD) is an excellent candidate, not only meeting the above–mentioned requirements of broadband (3 GHz~1 THz) and high–frequency operation, but also exhibiting the high output power over mW–level at the 300 GHz band. This paper reviews the fundamentals of high–speed, high–power photodiodes, mirror–reflected photodiodes, microstructure photodiodes, photodiode–integrated devices, the related equivalent circuits, and design considerations. Those characteristics of photodiodes and the related photonic–based devices are analyzed and reviewed with comparisons in detail, which provides a new path for these devices with applications in short–range wireless communications in 6G and beyond.

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Section: High-reflected Mirrors For Photodiodesmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Advances in High–Speed, High–Power Photodiodes: From Fundamentals to Applications

Chen,

Zhang,

Sharawi

et al. 2024

Applied Sciences

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“…Figure 1 shows the relationship between responsivity and absorber thickness of several related works. 10,[16][17][18][19][20][21][22][23][24][25][26] As it can be seen that the WG-UTC-PDs, which are near-ballistic UTC-PD, 16) evanescent WG-UTC-PD, 17) WG-UTC-PD on silicon-on-insulator (SOI) substrate, 18) WG-UTC-PD on silicon-on-diamond substrate 19) and WG-UTC-PD integrated on SOI nano-waveguide, 20) demonstrate many responsivity advantages in comparison with UTC-PDs with VDM structures. Compared to UTC-PDs with waveguide structures, some VDM structures also exhibit the improvement of the responsivity characteristic, such as resonant-cavity-enhanced UTC-PD, 21) hexagonally shaped dual-mesa UTC-PD that integrated a total-reflection mirror (TR-UTC-PD), 22) back-toback UTC-PD, 23) charge-compensation modified UTC-PD 9,10,24,25) and high reflectivity UTC-PD.…”

mentioning

confidence: 99%

“…Compared to UTC-PDs with waveguide structures, some VDM structures also exhibit the improvement of the responsivity characteristic, such as resonant-cavity-enhanced UTC-PD, 21) hexagonally shaped dual-mesa UTC-PD that integrated a total-reflection mirror (TR-UTC-PD), 22) back-toback UTC-PD, 23) charge-compensation modified UTC-PD 9,10,24,25) and high reflectivity UTC-PD. 26) A relatively high-responsivity is realized by those different kinds of structures without sacrificing the bandwidth performance. However, many problems arise, such as the epitaxial growth time and cost for a distributed Bragg reflector (DBR) mirrors, the fabricated complexities for a monolithic integrated device and even the coupling problem during the measurement for a waveguide-integrated device.…”

mentioning

confidence: 99%

Uni-traveling-carrier photodetector with high-contrast grating focusing-reflection mirrors

Chen

Fang

Huang

et al. 2019

Appl. Phys. Express

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A novel uni-traveling-carrier photodetector (UTC-PD) structure with an integrated focusingreflection (FR) mirror realized by a non-periodic concentric circular high-contrast grating (NP-CC-HCG), referred to as FR-UTC-PD, is proposed to enhance responsivity in conventional UTC-PDs. The FR-UTC-PD allows improving the responsivity by 36.5% at a 1.55-μm wavelength as compared to a UTC-PD without integrated an FR mirror with 84.59% reflectivity. For 40-μm-diameter PDs, the obtained 3-dB bandwidths are unaltered with values of 18 GHz at -3.0 V bias voltage. The radio-frequency (RF) output power and photocurrent are -1.77 dBm and 17.56 mA, respectively, at 10 GHz and the -6.0 V bias voltage. Submitted To APEX 2The high-speed and high-responsivity photodetectors operating at long wavelength regimes have been widely used in wireless communication system, broadband optical communication system, and high-frequency measurement systems. 1-2) The uni-travelingcarrier photodetector (UTC-PD) [3][4] only utilizes electrons as active carriers and thus easily exhibits high-speed and high-output characteristics simultaneously, which has been of great interest both for research [5][6][7][8] and broad ranges of applications. 9-14) Moreover, high-speed UTC-PDs also need high-responsivity to prevent the waveform distortion of the high-speed signals and thus degrade the total power consumption of the system. Therefore, it is very important to adopt methods to further improve the bandwidth and responsivity performance for UTC-PDs. For instance, a UTC-PD with the downscaling absorber thickness and absorption area starting with 86 nm, 13μm 2 scaled down to 30 nm, 5 μm 2 , achieves 3-dB bandwidths from 235 GHz to 310 GHz while having the responsivities from 0.126 A/W to 0.07 A/W, respectively, at a 1.55-μm wavelength. [5][6] In order to achieve higher responsivity, a UTC-PD with a 1.2-μm-thick InGaAs absorber exhibits the responsivity up to 1.0 A/W, with a 3-dB bandwidth of only 9 GHz under low photocurrent. 15) Hence, balancing the tradeoff between the bandwidth and responsivity in UTC-PDs has become an active research area.Recently, various structures have been explored to address the bandwidth-responsivity

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“…This structure can achieve a high speed, a high efficiency, and a narrow spectral linewidth. In addition, a PD integrated with a single bottom reflector such as a distributed Bragg reflector [5,6] , periodic subwavelength gratings [7] , or metal mirror [8] can obtain a high speed and high efficiency simultaneously because the effective absorption length of the devices has doubled.…”

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confidence: 99%

Research on photodiode integrated with wide spectrum focusing reflector using nonperiodic subwavelength gratings

et al. 2018

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The fabrication and characterization of p-in photodiodes integrated with wide spectrum focusing reflectors using nonperiodic strip and concentric-circular subwavelength gratings are presented. The experimental results show that the gratings can reflect and focus the incident light on the absorber of the photodiode, and thus can simultaneously achieve high speed and high efficiency. For the gratings' integrated photodiodes, the responsivity is improved over a wide spectral range, and when the absorber was 600 nm and the mesa diameter was 40 μm, a responsivity of 0.46 A/W at a wavelength of 1.55 μm and a 3 dB bandwidth of 21.6 GHz under a reverse bias of 3 V were simultaneously obtained.

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Uni-Traveling-Carrier Photodetector With High-Reflectivity DBR Mirrors

Cited by 12 publications

References 22 publications

Advances in High–Speed, High–Power Photodiodes: From Fundamentals to Applications

Advances in High–Speed, High–Power Photodiodes: From Fundamentals to Applications

Uni-traveling-carrier photodetector with high-contrast grating focusing-reflection mirrors

Research on photodiode integrated with wide spectrum focusing reflector using nonperiodic subwavelength gratings

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