Uniaxial stress study of photoluminescence defects created by noble-gas implantation into silicon

Cathodoluminescence Microcharacterization of Radiative Recombination Centers in Lifetime-Controlled Insulated Gate Bipolar Transistors

“…It is reported that the W line is less sensitive to stress than the other lines. 21,22) Therefore, the residual stress induced by packaging is the main cause of the luminescence peak shift. At high annealing temperatures, the encapsulating plastic resin degraded and became brittle.…”

Pressure Dependence of a Deep Excitonic Level in Silicon

“…This has been suggested by others based upon a highly nonlinear uniaxial stress dependence and multiple activation energies used in fits to PL temperature dependences [4]. The clear change in the pressure derivative of the Il energy (Fig.…”

“…It is most efficiently produced by ion or neutron bombardment, but can also be produced by other forms of radiation. Magnetic field and uniaxial stress measurements have shown that the I1 ground state is non-degenerate, and that the defect has C 3 , symmetry [3][4][5]. It has a total binding energy of 137 meV, and the temperature dependence of the PL intensity has an Arhenius quench energy (t hermal binding energy) of about 50 meV [4].…”