Uniform 90-channel multiwavelength InAs/InGaAsP quantum dot laser

Liu, J.; Lü, Zhenguo; Raymond, S.; Poole, Philip J.; Barrios, Pedro; Pakulski, G.; Poitras, Daniel; Xiao, Gaozhi; Zhang, Z.

doi:10.1049/el:20070594

Cited by 23 publications

(7 citation statements)

References 11 publications

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“…Such devices are highly attractive in optical networks replacing many individual lasers. This concept was first reported by Liu et al [134] on InAs/InP Qdots material system. By employing a 2 ×4500 µm 2 ridge-waveguide InAs/InGaAsP/(100)-InP Qdots laser and in CW operation, 93 uniform channels (centered at 1.642 µm) with channel intensity non-uniformity of 3dB was reported.…”

Section: Multiwavelength Lasersmentioning

confidence: 76%

Self-assembled InAs/InP quantum dots and quantum dashes: Material structures and devices

Khan

Ooi

2014

Progress in Quantum Electronics

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The advances in lasers, electronic and photonic integrated circuits (EPIC), optical interconnects as well as the modulation techniques allow the present day society to embrace the convenience of broadband, high speed internet and mobile network connectivity. However, the steep increase in energy demand and bandwidth requirement calls for further innovation in ultra-compact EPIC technologies. In the optical domain, innovation in the laser technologies beyond the current quantum well (Qwell) based laser technologies are already taking place and presenting very promising results. Homogeneously grown quantum dot (Qdot) lasers, can serve in the future energy saving information and communication technologies (ICT) as the work-horse for transmitting information through optical fiber. The encouraging results in the zero-dimensional (0D) structures emitting at 980 nm, in the form of vertical cavity surface emitting laser (VCSEL), are already operational at low threshold current density and capable of 40 Gbps error-free transmission at 108 fJ/bit. Eventual achievements for lasers operating in the O-, C-, L-, U-bands, and beyond will eventually lay the foundation for green ICT. On the hand, the inhomogeneously grown quasi 0D quantum dash (Qdash) lasers are brilliant solutions for potential broadband connectivity in server farms or access network. A single broadband Qdash laser operating in the stimulated emission mode can replace tens of discrete narrow-band lasers in dense wavelength division multiplexing (DWDM) transmission thereby further saving energy, cost and footprint. In this article, we review the progress of both Qdots and Qdash devices based on the InAs/InGaAlAs/InP and InAs/InGaAsP/InP material systems, from the angles of growth and device performance.2

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Section: Multiwavelength Lasersmentioning

confidence: 76%

Self-assembled InAs/InP quantum dots and quantum dashes: Material structures and devices

Khan

Ooi

2014

Progress in Quantum Electronics

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“…Recently we have demonstrated InAs/InP quantum-dot (QD) mode-locked lasers (MLLs) i.e. CCLs with repetition rates from 10 GHz to 437 GHz and a total output power up to 50 mW per facet at room temperature [6,[9][10][11][12][13][14]. For these devices we have measured relative intensity noise (RIN) and phase noise of filtered individual wavelength channels and the whole CCL spectrum, and their RF beating signal of the whole coherent comb [6,15].…”

Section: Introductionmentioning

confidence: 99%

Ultra-narrow linewidth quantum dot coherent comb lasers with self-injection feedback locking

et al. 2018

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We have used an external cavity self-injection feedback locking (SIFL) system to simultaneously reduce the optical linewidth of over 39 individual wavelength channels of an InAs/InP quantum dot (QD) coherent comb laser (CCL). Linewidth reduction from a few MHz to less than 200 kHz is observed. Measured phase noise spectra clearly indicate a significant decrease in phase noise in the frequency range above 2 kHz. The RF beating signal between two adjacent channels also shows a substantial reduction in 3-dB linewidth from 10 kHz to 300 Hz with the SIFL system, and a corresponding drop in baseline level (-27 dB to -50 dB).

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“…Once those ASE spectra are laterally confined by waveguides, longitudinally selected and enhanced by a F-P cavity, lasing could occur over a broadwide wavelength range where intracavity gain is larger than waveguide internal loss plus cavity mirror losses. Because this type of inhomogeneous gain dramatically suppresses mode competition, very stable QD multi-wavelength laser (QD-MWL) has been obtained in such QD F-P cavity with tens or hundreds of longitudinal lasing modes [18,19]. Because of the intracavity intrinsic linear dispersion from QD waveguide and facet mirror coatings, the QD-MWL has the minor non-equal mode spacing between any adjacent longitudinal modes.…”

Section: Introductionmentioning

confidence: 99%