Uniform and High Gain GaN p-i-n Ultraviolet APDs Enabled by Beveled-Mesa Edge Termination

Wang, Wangping

doi:10.1109/lpt.2020.3025290

Cited by 11 publications

(3 citation statements)

References 13 publications

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“…In order to estimate the gain for the experimental devices [ 18 ], their dark currents (I D ) and photocurrents (I P ) were measured. The current differences were obtained by subtracting I D from I P .…”

Section: Resultsmentioning

confidence: 99%

Guard Ring Design to Prevent Edge Breakdown in Double-Diffused Planar InGaAs/InP Avalanche Photodiodes

et al. 2023

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We report on the design of an attached guard ring (AGR) and a floating guard ring (FGR) in a planar separate absorption, grading, charge, and multiplication In0.53Ga0.47As/InP avalanche photodiode to prevent premature edge breakdowns. The depths of the two Zn diffusions were utilized to manipulate the guard ring structures. Results from TCAD simulation indicate that the optimal AGR diffusion depth is right at the turning point where the breakdown current shifts from the edge of active region to the AGR region. The devices with optimal AGR depth contain significantly higher breakdown voltages than those of devices either with shallower—or without any— AGR. For the FGR design, a series of devices with different spacings between AGR and FGR and different FGR opening widths for diffusion were fabricated and characterized. We show that when the spacing is longer than the critical value, the breakdown voltage can increase ~1.5 V higher than those of the APD devices without FGR. In addition, the wider the FGR opening width, the higher the breakdown voltage. TCAD simulations were also performed to study the effect of FGR, but showed less pronounced improvements, which could be due the discrepancy between the calculated and experimental diffusion profile.

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Section: Resultsmentioning

confidence: 99%

Guard Ring Design to Prevent Edge Breakdown in Double-Diffused Planar InGaAs/InP Avalanche Photodiodes

et al. 2023

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“…In this section, initially the performance of the proposed GaN/Al0.3Ga0.7N/GaN MQB APD has been compared with some group-III nitride-based UV and IR detectors [28,[41][42][43][44][45]. The said performance comparison has been presented in Table 2.…”

Section: Comparison With Existing Photodetectorsmentioning

confidence: 99%

“…It can be observed from Table 2 that the performance of the proposed MQB structure is fairly comparable with the existing group-III nitride-based UV and IR detectors. However, the notable advantage of the proposed MQB APD is its wider detection spectrum (starting from UV spectrum, extended up to the mid-IR spectrum (up to 6.0 μm)) as compared to the other state-of-the-art detectors with considerable narrow detection spectrum [28,[41][42][43][44][45]. The performance of the proposed GaN/Al0.3Ga0.7N/GaN MQB APD has also been compared with various state-of-the-art near-IR and mid-IR photo-detectors available in literature .…”

Section: Comparison With Existing Photodetectorsmentioning

confidence: 99%

Multiple Quantum Barrier Avalanche Photodiode Based on GaN/AlGaN Heterostructures for Long Wavelength Infrared Detection

Ghosh,

Acharyya,

Biswas

et al. 2024

IEEE Access

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A multiple quantum barrier (MQB) avalanche photodiode (APD) structure based on GaN/AlxGa1-xN material system has been proposed in this paper which is capable of detecting infrared (IR) signal up to 6.0 µm wavelength. A selfconsistent quantum drift-diffusion (SCQDD) model developed by the authors, has been used to determine the current-voltage characteristics under dark and illuminated conditions, spectral response, excess noise properties, signal-to-noise ratio, time and frequency responses. Results show that the proposed MQB APD attains peak responsivity of 60 AW -1 at 3.0 µm wavelength. Incorporation of a dedicated thin n-type GaN layer for avalanche multiplication in between the p + -GaN contact layer and MQB constant-field drift-layer ensures significantly low noise equivalent power under normal operating conditions at room temperature (300 K). Optical pulse response of the device reveals that special restriction over the charge multiplication able to supress the minor peaks of the current response and consequently significantly narrow pulse response can be achieved. Narrow pulse response leads to broad bandwidth of 274.5 GHz, which is significantly broader than the existing IR photo-detectors.INDEX TERMS avalanche photodiodes, multiple quantum barrier, self-consistent quantum drift-diffusion model, infrared, heterojunction, responsivity, pulse response, bandwidth.

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Noise Reduction in VCSEL Based Wavelength Division Multiplexing System

Krithiga

Bhaskar

Malarvizhi

et al. 2021

Wireless Pers Commun

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Uniform and High Gain GaN p-i-n Ultraviolet APDs Enabled by Beveled-Mesa Edge Termination

Cited by 11 publications

References 13 publications

Guard Ring Design to Prevent Edge Breakdown in Double-Diffused Planar InGaAs/InP Avalanche Photodiodes

Guard Ring Design to Prevent Edge Breakdown in Double-Diffused Planar InGaAs/InP Avalanche Photodiodes

Multiple Quantum Barrier Avalanche Photodiode Based on GaN/AlGaN Heterostructures for Long Wavelength Infrared Detection

Noise Reduction in VCSEL Based Wavelength Division Multiplexing System

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