Uniform InSb quantum dots buried in narrow-gap InAs(Sb,P) matrix

Radiative recombination in the InAs/InSb type II broken-gap heterojucntion with quantum dots at the interface

“…Sample 1 (MP-24/1) contained QD arrays with a density of n QD1 = 0.7 • 10 10 cm −2 , while sample 2 (MP-1/1) demonstrated a QD surface density of about n QD2 = 2 • 10 10 cm −2 . The technique of QD formation and their structural properties are described in previous studies [9,10]. Then the produced InSb QD layer was overdeposited by an epitaxial layer of indium arsenide using the method of metalorganic vapour phase epitaxy (MOVPE) at a temperature of 510 • C. The overdeposited InAs layer was not doped intentionally in the process of epitaxy and demonstrated n-type conductivity with an estimated electron concentration of n 300 ∼ 6 • 10 16 cm −3 .…”

Effects of In composition on the surface morphology of self-assembled In x Ga1−x Sb/GaAs quantum dots

“…[9][10][11] In the study of SK growth, arsenic-based QDs such as In(Ga)As QDs on GaAs substrates have been extensively investigated. [12][13][14][15][16] In contrast, the QD growth of antimony-based semiconductors is relatively unknown, although several works have been done on the formation of Ga(As)Sb QDs, [17][18][19][20][21][22][23][24][25] In(Ga)Sb QDs, [26][27][28] In (GaAs)NSb QDs, 29,30) and so on.…”

Nanoheterostructures with InSb quantum dashes inserted in the InAs unipolar matrix

“…Moreover, the localized states of quantum dots and quantum dashes must have a longer nonequilibrium-carrier lifetime, compared with higher dimension systems, due to the suppression of scattering at phonons, which will make it possible to advance into the range of higher working temperatures. It has been shown previously that the presence of at least a single QD sheet with a thickness of several nanometers can strongly affect the properties of the bulk matrix in which the QDs are embedded [1]. The first data on InSb QDs overgrown in an InAs matrix in a single process with the use of metalorganic vapor phase epitaxy (MOVPE) appeared only in 2012 [2].…”