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The features of the electroluminescence spectra of narrow-gap type II InAs/InSb/InAs heterostructures containing a single layer of InSb quantum dots placed into the p-n-InAs junction were studied. The luminescent properties of the heterostructures under a forward and reverse bias in the temperature range of 77–300 K were investigated as a function of the surface density of nano-objects buried in the narrow-gap matrix. When applying the reverse bias to the heterostructures under study, the suppression of negative interband luminescence and the dominance of interface recombination transitions at the InSb/InAs type II heterojunction were observed at room temperature. The radiation, which corresponded to recombination transitions involving localized electron-hole states of the InSb quantum dots, was revealed determined and recorded at low temperatures.