Uniform Low-to-High In Composition InGaN Layers Grown on Si

Aseev, Pavel; Rodriguez, Paul E. D. Soto; Kumar, Praveen; Gómez, Valentín Bote; Alvi, Naveed ul Hassan; Manuel, José; Morales, F. M.; Jiménez, J.; Garcı́a, R.; Calleja, E.; Nötzel, R.

doi:10.7567/apex.6.115503

Cited by 16 publications

(11 citation statements)

References 19 publications

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“…InGaN can be grown directly also on Si, as already demonstrated in [42]. Further, the InGaNfilms or QDs strain, as in all WZ semiconductors, induce a piezoelectric polarization, as well.…”

Section: Physical Parameters Gan Inn Bowing Parametersmentioning

confidence: 82%

Modeling of the Interminiband Absorption Coefficient in InGaN Quantum Dot Superlattices

2016

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Abstract:In this paper, a model to estimate minibands and theinterminiband absorption coefficient for a wurtzite (WZ) indium gallium nitride (InGaN) self-assembled quantum dot superlattice (QDSL) is developed. It considers a simplified cuboid shape for quantum dots (QDs). The semi-analytical investigation starts from evaluation through the three-dimensional (3D) finite element method (FEM) simulations of crystal mechanical deformation derived from heterostructure lattice mismatch under spontaneous and piezoelectric polarization effects. From these results, mean values in QDs and barrier regions of charge carriers' electric potentials and effective masses for the conduction band (CB) and three valence sub-bands for each direction are evaluated. For the minibands' investigation, the single-particle time-independent Schrödinger equation in effective mass approximation is decoupled in three directions and resolved using the one-dimensional (1D) Kronig-Penney model. The built-in electric field is also considered along the polar axis direction, obtaining Wannier-Stark ladders. Then, theinterminiband absorption coefficient in thermal equilibrium for transverse electric (TE) and magnetic (TM) incident light polarization is calculated using Fermi's golden rule implementation based on a numerical integration into the first Brillouin zone. For more detailed results, an absorption coefficient component related to superlattice free excitons is also introduced. Finally, some simulation results, observations and comments are given.

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“…InGaN can be grown directly also on Si, as already demonstrated in [42]. Further, the InGaNfilms or QDs strain, as in all WZ semiconductors, induce a piezoelectric polarization, as well.…”

Section: Physical Parameters Gan Inn Bowing Parametersmentioning

confidence: 82%

Modeling of the Interminiband Absorption Coefficient in InGaN Quantum Dot Superlattices

2016

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“…Hence, the direct growth on Si substrates is the ultimate goal, allowing for device designs such as InGaN/Si tandem solar cells and vertical contact schemes at much lower cost and for the direct integration with existing Si technology. Along this line, we have already reported the growth of thick and uniform high-In-content InGaN layers on Si by either strongly promoting growth selectivity (the separation of low-and high-In-content regions) producing micron-sized atomically flat In-rich regions 15 or by the suppression of growth selectivity at lower temperature resulting in undulated, chemically uniform InGaN layers 16 with high optical quality.…”

Section: à2mentioning

confidence: 84%

Stranski-Krastanov InN/InGaN quantum dots grown directly on Si(111)

Rodriguez

Aseev

Gómez

et al. 2015

Applied Physics Letters

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The authors discuss and demonstrate the growth of InN surface quantum dots on a high-In-content In0.73Ga0.27N layer, directly on a Si(111) substrate by plasma-assisted molecular beam epitaxy. Atomic force microscopy and transmission electron microscopy reveal uniformly distributed quantum dots with diameters of 10–40 nm, heights of 2–4 nm, and a relatively low density of ∼7 × 109 cm−2. A thin InN wetting layer below the quantum dots proves the Stranski-Krastanov growth mode. Near-field scanning optical microscopy shows distinct and spatially well localized near-infrared emission from single surface quantum dots. This holds promise for future telecommunication and sensing devices.

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“…The In content was determined using Vegard's law by linear interpolation between the peak positions of GaN and InN. Full reciprocal space mapping has shown complete relaxation of the InGaN layers 23 . To clearly resolve the InN QDs, AFM images are shown in Fig.…”

Section: Resultsmentioning

confidence: 99%

Quantum dot activated indium gallium nitride on silicon as photoanode for solar hydrogen generation

et al. 2019

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Nitride alloys are considered potential candidates as photoelectrodes for photoelectrochemical water splitting. Here we show an In 0.25 Ga 0.75 N layer activated by indium nitride quantum dots as efficient photoanode for photoelectrochemical hydrogen generation by water splitting when directly grown on cheap silicon (111) substrates. Photocurrent measurements show more than five times enhancement by the indium nitride quantum dots compared to a bare In 0.25 Ga 0.75 N-on-silicon photoanode. The maximum incident photon-tocurrent conversion efficiency is 44% at 550 nm at 0.4 V, the applied-bias photon-to-current efficiency is 4.1% and the hydrogen and oxygen generation rates are 75 µmol h −1 cm −2 and 33 µmol h −1 cm −2 at 0.2 V under 100 mW cm −2 white light illumination.

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Uniform Low-to-High In Composition InGaN Layers Grown on Si

Cited by 16 publications

References 19 publications

Modeling of the Interminiband Absorption Coefficient in InGaN Quantum Dot Superlattices

Modeling of the Interminiband Absorption Coefficient in InGaN Quantum Dot Superlattices

Stranski-Krastanov InN/InGaN quantum dots grown directly on Si(111)

Quantum dot activated indium gallium nitride on silicon as photoanode for solar hydrogen generation

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