Uniformity study of wafer-scale InP-to-silicon hybrid integration

Liang, Di; Chapman, David C.; Li, Youli; Oakley, D.C.; Napoleone, Tony; Juodawlkis, Paul W.; Brubaker, Chad; Mann, Carl; Bar, Hanan; Raday, Omri; Bowers, John E.

doi:10.1007/s00339-010-5999-z

Cited by 35 publications

(16 citation statements)

References 15 publications

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“…This wafer bonding technique results in extremely strong bonding surface energy, void-free and low-strain bonding interface. Improved III-V active region quality is also observed after epitaxial transfer by photoluminescence measurement (Liang et al ., 2011a ). Upon removing the thick InP substrate selectively, the mesa structure to enable a carrier injection scheme similar to vertical-cavity surface-emitting laser (VCSEL) is then formed on the III-V region by standard photolithography and etching ( Fig.…”

Section: Basics Of Hybrid Si Lasersmentioning

confidence: 77%

Hybrid silicon lasers

Liang

Bowers

2013

Semiconductor Lasers

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Section: Basics Of Hybrid Si Lasersmentioning

confidence: 77%

Hybrid silicon lasers

Liang

Bowers

2013

Semiconductor Lasers

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“…After rigorous sample cleaning, the native oxide on silicon on insulator (SOI) wafer and InP is removed in buffered hydrofluoric acid (HF) solution and 39 w/v% NH 4 OH, respectively, resulting in clean, hydrophobic surfaces. From there, O 2 plasma-treated substrates undergo surface treatment to grow an ultra-thin layer of plasma oxide (~15 nm) [7] that creates a smooth hydrophilic surface [8]. In this way, Si-O-Si bonds of the oxide are found to be more reactive than conventional oxides formed in other cleaning processes, as well as have a higher propensity to break and form new bonds [9].…”

Section: Integration Of Photonic Components Into Microelectronicsmentioning

confidence: 99%

“…General structure of III-V layers consists of the following: (1) p-type InGaAs contact layer, (2) p-type InP cladding, (3) optional p-type separated confinement heterostructure (SCH) layer, (4) undoped multiple quantum well layer, (5) n-type contact layer, and (6) n-type superlattice bonding layers. Superlattice bonding layers reduce and block the TEC mismatch-induced defects [7,17]. Generally, the fabrication process to form the hybrid Si device platform involves bonding of the III-V wafer to the patterned SOI wafer, InP substrate removal and mesa etching, and current confinement and metal contact formation.…”

Section: Integration Of Photonic Components Into Microelectronicsmentioning

confidence: 99%

Electrospinning for nano- to mesoscale photonic structures

et al. 2016

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Abstract:The fabrication of photonic and electronic structures and devices has directed the manufacturing industry for the last 50 years. Currently, the majority of small-scale photonic devices are created by traditional microfabrication techniques that create features by processes such as lithography and electron or ion beam direct writing. Microfabrication techniques are often expensive and slow. In contrast, the use of electrospinning (ES) in the fabrication of microand nano-scale devices for the manipulation of photons and electrons provides a relatively simple and economic viable alternative. ES involves the delivery of a polymer solution to a capillary held at a high voltage relative to the fiber deposition surface. Electrostatic force developed between the collection plate and the polymer promotes fiber deposition onto the collection plate. Issues with ES fabrication exist primarily due to an instability region that exists between the capillary and collection plate and is characterized by chaotic motion of the depositing polymer fiber. Material limitations to ES also exist; not all polymers of interest are amenable to the ES process due to process dependencies on molecular weight and chain entanglement or incompatibility with other polymers and overall process compatibility. Passive and active electronic and photonic fibers fabricated through the ES have great potential for use in light generation and collection in optical and electronic structures/ devices. ES produces fiber devices that can be combined with inorganic, metallic, biological, or organic materials for novel device design. Synergistic material selection and postprocessing techniques are also utilized for broad-ranging applications of organic nanofibers that span from biological to electronic, photovoltaic, or photonic. As the ability to electrospin optically and/or electronically active materials in a controlled manner continues to improve, the complexity and diversity of devices fabricated from this process can be expected to grow rapidly and provide an alternative to traditional resource-intensive fabrication techniques.

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“…The bonding of indium phosphide (InP) to silicon (Si) (Da=a ¼ 8:1%), for instance, allows the direct coupling of emission and/or amplification at 1.55 lm to silicon waveguides. Several approaches to direct bonding have been proposed in the literature: approaches using benzocyclobutene (BCB), 1 thick oxides, 2-6 thin oxides, 7 and, finally, no oxides 8,9 have been demonstrated.…”

mentioning

confidence: 99%