Evaluation of the surface bonding energy of an InP membrane bonded oxide-free to Si using instrumented nanoindentation

Pantzas, Konstantinos; Patriarche, G.; Bourhis, E. Le; Tománek, David; Ahmad, Ishtiaq; Beaudoin, G.; Sagnes, I.; Talneau, A.

doi:10.1063/1.4817675

Cited by 14 publications

(14 citation statements)

References 17 publications

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“…Usually, the bonding strength is measured by employing a crack-opening method. 34) In this method, a thin blade is inserted in the bonded interface and the bonding energy is calculated. In this work, however, the thickness of the InP layers was only 0.5 or 1 µm and the layers were assumed to be smashed.…”

Section: Bonding Strength Of Inp Layer Wafer-bonded On Si Substratementioning

confidence: 99%

Novel integration method for III–V semiconductor devices on silicon platform

Matsumoto

Kishikawa

Nishiyama

et al. 2016

Jpn. J. Appl. Phys.

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A novel integration method for III–V semiconductor devices on a Si platform was demonstrated. Thin-film InP was directly bonded on a Si substrate and metal organic vapor phase epitaxy (MOVPE) growth was performed by using an InP/Si template. A void-free 2-in. InP layer bonded on a Si substrate was realized, and a low interfacial resistance and ohmic contact through the bonded interface were observed. After the MOVPE process, the as-grown structure was optically active and we observed photoluminescence (PL) intensity comparable to that from the same structure grown on InP as a reference. Furthermore, almost no lattice strain was observed from the InP layer. Then, the epitaxial growth of a GaInAsP–InP double-hetero (DH) laser diode (LD) was demonstrated on the substrate and we observed lasing emission at RT in a pulse regime. These results are promising for the integration of InP-based devices on a Si platform for optical interconnection.

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Section: Bonding Strength Of Inp Layer Wafer-bonded On Si Substratementioning

confidence: 99%

Novel integration method for III–V semiconductor devices on silicon platform

Matsumoto

Kishikawa

Nishiyama

et al. 2016

Jpn. J. Appl. Phys.

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“…No H2 out gassing is visible, the H2 by-products having the ability to easily diffuse within both crystalline lattices. This was also the case when oxide-free bonding was performed for III-V on III-V in order to associate GaAs/AlGaAs Bragg mirrors on InP-based cavities for 1.55 µm Vertical Cavity Surface Emitting Lasers (VCSEL) [14][15][16][17][18][19].…”

Section: Oxide-free Bonding Of Iii-v Materials On Planar and Patternedmentioning

confidence: 99%

“…For mechanical characterization, a 400-nm-thick InP membrane has been bonded on an Si substrate. The surface bonding energy of the InP membrane when oxide-free bonded to sub-lambda patterned silicon was measured using the method described in Reference [16]. In this method, instrumented nano-indentation is used to locally debond InP from Si.…”

Section: Mechanical Characterizationmentioning

confidence: 99%

“…Based on existing expertise on heteroepitaxial bonding of GaAs on InP [14], we have developed heteroepitaxial bonding of III-V materials on Si and SOI substrates for telecom wavelengths. This oxide-free bonding technique has demonstrated atomic-plane-thick reconstruction across the interface, leading to a high bonding energy and no degradation of the photoluminescence of bonded quantum wells located close to the hybrid interface [15,16].…”

Section: Introductionmentioning

confidence: 99%

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Oxide-Free Bonding of III-V-Based Material on Silicon and Nano-Structuration of the Hybrid Waveguide for Advanced Optical Functions

Pantzas¹,

Ahmad²,

Sagnes³

et al. 2015

Photonics

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Oxide-free bonding of III-V-based materials for integrated optics is demonstrated on both planar Silicon (Si) surfaces and nanostructured ones, using Silicon on Isolator (SOI) or Si substrates. The hybrid interface is characterized electrically and mechanically. A hybrid InP-on-SOI waveguide, including a bi-periodic nano structuration of the silicon guiding layer is demonstrated to provide wavelength selective transmission. Such an oxide-free interface associated with the nanostructured design of the guiding geometry has great potential for both electrical and optical operation of improved hybrid devices.

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“…The oxide-free process details have been described elsewhere [6]. The quality of the bonding interface was characterized by nanoindentation and revealed a relatively high surface bonding energy of 585 mJ/m 2 , suitable for hybrid devices in common applications [7]. In Fig.…”

Section: Assessment Of Embedded Nanopatternsmentioning

confidence: 99%

Embedded Effective-Index-Material in Oxide-Free Hybrid Silicon Photonics Characterized by Prism Deviation

Bougot-Robin

Pang²,

Pommarede³

et al. 2014

J. Lightwave Technol.

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Evaluation of the surface bonding energy of an InP membrane bonded oxide-free to Si using instrumented nanoindentation

Abstract: Effect of band offset on carrier transport and infrared detection in InP quantum dots/Si nano-heterojunction grown by metalorganic chemical vapor deposition technique

Cited by 14 publications

References 17 publications

Novel integration method for III–V semiconductor devices on silicon platform

Novel integration method for III–V semiconductor devices on silicon platform

Oxide-Free Bonding of III-V-Based Material on Silicon and Nano-Structuration of the Hybrid Waveguide for Advanced Optical Functions

Embedded Effective-Index-Material in Oxide-Free Hybrid Silicon Photonics Characterized by Prism Deviation

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